JANTXV2N6678T1 [MICROSEMI]
Transistor;
Microsemi 
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 10 May 2011.
INCH-POUND
MIL-PRF-19500/538F
10 February 2011
SUPERSEDING
MIL-PRF-19500/538E
25 April 2009
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, AND 2N6693,
JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA,
JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF, JANKCAG, AND JANKCAH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
*
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Four levels
of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to
eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators “M”, “D”, “P“,
“L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.
*
1.2 Physical dimensions. See figure 1 (TO-3) - 2N6676, 2N6678; figure 2 (TO-61) - 2N6691, 2N6693, figure 3
(TO-254AA) - 2N6676T1, 2N6678T1, figure 4 (TO-257AA) - 2N6676T3, 2N6678T3, and figure 5 (JANHC and
JANKC).
1.3 Maximum ratings.
RθJC
(2)
Types
PT
PT
VCBO and
VCEX
VCEO
TJ and TSTG
TA = +25°C
TC = +25°C (1)
W
6
6
4
4
6
6
W
175
175
(3) 125
(3) 125
175
V dc
450
650
450
650
450
650
V dc
300
400
300
400
300
400
°C/W
1.0
1.0
1.3
1.3
1.0
1.0
°C
2N6676, 2N6676T1
2N6678, 2N6678T1
2N6676T3
2N6678T3
2N6691
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
2N6693
175
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.daps.dla.mil .
AMSC N/A
FSC 5961
MIL-PRF-19500/538F
*
1.3 Maximum ratings. - Continued.
Types
VEBO
IB
IC
V dc
8.0
8.0
8.0
8.0
8.0
8.0
A dc
A dc
15
15
15
15
2N6676, 2N6676T1
2N6678, 2N6678T1
2N6676T3
2N6678T3
2N6691
5
5
5
5
5
5
15
15
2N6693
(1) See figures 6 and 7 for temperature-power derating curves.
(2) See figures 8 through 11, thermal impedance curves.
(3) For TO-257 devices with typical mounting and small footprint, conservatively rated at 125 W and 1.3°C/W only.
1.4 Primary electrical characteristics at TC = +25°C.
h
FE1
h
FE2
V
V
CE(sat)
BE(sat)
Limits
V
I
= 3 V dc
= 1 A dc
V
= 3 V dc
= 15 A dc
I
= 15 A dc
= 3 A dc
I
= 15 A dc
C
I = 3 A dc
B
CE
C
CE
C
I
I
C
B
(1)
(1)
V dc
1.5
V dc
1.0
Min
Max
15
40
8
20
C
obo
Switching
(2)
|h
fe
|
Limits
V
= 10 V dc
= 1 A dc
V
CB
= 10 V dc
t
t
t
t
t
f
CE
c
d
r
s
I
I = 0
E
C
f = 5 MHz
100 KHz < f < 1 MHz
pF
µs
µs
µs
µs
µs
Min
Max
3
10
150
500
0.5
0.1
0.6
2.5
0.5
(1) Pulsed (see 4.5.1).
(2) See figure 12 (pulse response circuits).
2
MIL-PRF-19500/538F
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch or
-
Semiconductor Devices, General Specification for.
-
*
https://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3
MIL-PRF-19500/538F
Dimensions
Millimeters
Ltr
Notes
Inches
Max
Min
Min
Max
TO-3
CD
CH
HR
.875
.380
.525
.188
22.22
9.65
3
.270
.495
.131
6.86
12.57
3.33
13.34
4.78
HR
1
HT
.060
.135
.050
1.52
3.43
1.27
5, 9
L
1
LD
LL
.038
.312
.151
1.177
.420
.205
.043
.500
.161
1.197
.440
.225
0.97
7.92
1.09
12.70
4.09
5, 9
5
MHD
MHS
PS
3.84
7
29.90
10.67
5.21
30.40
11.18
5.72
4
4, 5
PS
1
.655
0.675
16.64
17.14
4
S
1
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Body contour is optional within zone defined by CD
4. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane.
Measurement shall be made at seating plane.
5. Both terminals.
6. At both ends.
7. Two holes.
8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case.
9. LD applies between L1 and LL. Diameter is uncontrolled in L1.
10. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions (TO-3) for 2N6676 and 2N6678.
4
MIL-PRF-19500/538F
Dimension
Inches Millimeters
Ltr
A1
Notes
Min
Max
.270
Min
Max
6.86
CD
CD1
CH
HF
.570
.610
.325
.667
.090
.610 14.48 15.49
.687 15.49 17.45
.460
.687 16.94 17.45
.150 2.29 3.81
.875 16.26 22.22
8.26 11.68
HT
OAH .640
4
8.64 10.54 3, 6
TO-61
PS
PS1
SL
SU
T
.340
.170
.422
.415
.213
4.32
5.41
3, 6
.455 10.72 11.56
.090
.072
.077
.249
2.29
1.83
1.96
6.32
7
.047
.046
.220
1.19
1.17
5.59
T1
UD
NOTES:
1. Dimensions are in inches, millimeters are given for general information only.
2. See NSB Handbook H28, “Screw-Thread Standards for Federal Services”.
3. The orientation of the terminals in relation to the hex flats is not controlled.
4. All three terminals.
5. The case temperature may be measured anywhere on the seating plane within .125 inch (3.18 mm) of the
stud.
6. Terminal spacing measured at the base seat only.
7. This dimension applies to the location of the center line of the terminals.
8. Terminal - 1, emitter; terminal - 2, base; terminal - 3, collector. All leads are isolated from the case.
9. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions (TO-61) for 2N6691 and 2N6693.
5
MIL-PRF-19500/538F
Dimensions
Millimeters
Ltr
Inches
Max
Min
.535
.249
.035
.510
Min
Max
13.84
6.60
BL
CH
.545
.260
.045
.570
13.59
6.32
LD
0.89
1.14
LL
12.95
14.48
TO-254
LO
.150 BSC
.150 BSC
3.81 BSC
3.81 BSC
LS
MHD
MHO
TL
.139
.149
.685
.800
.050
.545
3.53
3.78
17.40
20.32
1.27
.665
.790
.040
.535
16.89
20.07
1.02
TT
TW
13.59
13.84
Term 1
Term 2
Term 3
Base
Collector
Emitter
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Methods used for electrical isolation of the terminals feedthroughs shall employ materials that
contain a minimum of 90 percent AL2O3 (ceramic).
4. All terminals are isolated from case.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 3. Dimensions and configuration for 2N6676T1 and 2N6678T1 (TO-254AA).
6
MIL-PRF-19500/538F
Dimensions
Millimeters
Ltr
Inches
Max
Min
.410
.190
.025
.500
Min
Max
10.92
5.08
BL
CH
.430
.200
.035
.750
10.41
4.83
LD
0.64
0.89
TO-257
LL
12.70
19.05
LO
.120 BSC
.100 BSC
3.05 BSC
2.54 BSC
LS
MHD
MHO
TL
.140
.150
.537
.665
.045
.420
3.56
3.81
13.63
16.89
1.14
.527
.645
.035
.410
13.39
16.38
0.89
TT
1
TW
10.41
10.67
Term 1
Term 2
Term 3
Base
Collector
Emitter
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Methods used for electrical isolation of the terminals feedthroughs shall employ materials that
contain a minimum of 90 percent AL2O3 (ceramic).
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 4. Dimensions and configuration for 2N6676T3 and 2N6678T3 (TO-257AA).
7
MIL-PRF-19500/538F
Dimensions
Inch
Ltr.
Millimeters
Max
5.46
Min
.205
Max
.215
Min
5.21
A, C
DESIGN DATA
Metalization:
Top: Aluminum 54,000 Å minimum, 60,000 Å nominal.
Back: Al/Ti/Ni/Au 10,000 Å minimum, 12,500 Å nominal.
Back side: Collector.
Chip thickness: .012 inch (0.305 mm) ±.002 inch (0.051 mm).
Bonding pad: B = .018 inch (0.46 mm) x .040 (1.02 mm).
E = .018 inch (0.46 mm) x .040 (1.02 mm).
* FIGURE 5. JANHCA and JANKCA (A version) die dimensions.
8
MIL-PRF-19500/538F
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows:
VCEX - Collector cutoff voltage (dc) with specified circuit between base and emitter.
RISO - Resistance between device case and leads
*
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-
19500 and figure 1 (TO-3) - 2N6676, 2N6678; figure 2 (TO-61) - 2N6691, 2N6693; figure 3 (TO-254AA) - 2N6678T1,
2N6676T1, and figure 4 (TO-257AA) - 2N6676T3 and 2N6678T3 herein, and figure 5.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500. Where a choice of lead
finish is desired, it shall be specified in the acquisition document (see 6.2).
*
3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices
to meet the applicable requirements of MIL-PRF-19500 and this document.
*
3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test
levels shall be as defined in MIL-PRF-19500.
*
3.6 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L,
R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of
abbreviation required).
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
*
*
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and table I, II, and III).
9
MIL-PRF-19500/538F
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
*
4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
*
4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
*
4.3 Screening. Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein.
The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table
I herein shall not be acceptable.
Screen (see table E-IV
of MIL-PRF-19500)
Measurements
JANS
JANTX and JANTXV levels
(1) 3c
Thermal impedance, method 3131 of
MIL-STD-750 (see 4.3.1)
Thermal impedance, method 3131 of
MIL-STD-750 (see 4.3.1)
9
ICEX1 and hFE2
ICEX1 and hFE2
11
ICEX1 and hFE2
ICEX1 and hFE2
∆ICEX1 = 100 percent of initial value or
500 nA dc, whichever is greater;
∆hFE2 = ±15 percent of initial value.
∆ICEX1 = 100 percent of initial value or
500 nA dc, whichever is greater;
∆hFE2 = ±25 percent of initial value.
12
13
See 4.3.2
See 4.3.2
Subgroup 2 and 3 of table I herein;
∆ICEX1 = 100 percent of initial value or
500 nA dc, whichever is greater;
∆hFE2 = ±25 percent of initial value.
Subgroup 2 of table I herein;
∆ICEX1 = 100 percent of initial value or
500 nA dc, whichever is greater;
∆hFE2 = ±25 percent of initial value.
(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in
screening requirements.
*
4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with
method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where
appropriate). Measurement delay time (tMD) = 70 µs max. The thermal impedance limit shall comply with the thermal
impedance graph on figures 8, 9, 10, and 11 (less than or equal to the curve value at the same tH time) and shall be
less than the process determined statistical maximum limit as outlined in method 3131 of MIL-STD-750. See table III,
subgroup 4 herein.
4.3.2 Power burn-in conditions. Power burn-in conditions are: TJ = + 175 °C minimum, VCB ≥ 100 V dc;
TA = +30°C maximum.
*
4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
10
MIL-PRF-19500/538F
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein.
Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
*
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
2037
Condition
*
B3
B4
B5
Test condition D, all internal leads for each device shall be pulled separately.
1037
VCB ≥ 100 V dc; 2,000 cycles.
1027
VCB = 100 V dc; adjust TA and PD to achieve TJ = +275°C minimum.
PD = 100 percent of rated PT minimum; TA = +100°C maximum.
4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
B3
Method
1027
Condition
For eutectic die attach: VCB ≥ 100 V dc; adjust PT to achieve TJ =
+175°C minimum; TA = +30°C maximum
B3
1037
For solder die attach: 2,000 cycles, VCB ≥ 100 V dc.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein.
Subgroup
C2
Method
2036
Condition
Test condition A; weight = 10 pounds; time = 15 s.
C2
2036
Test condition D1; torque = 6 inch-ounce; time =15 s (2N6691, 2N6693
only).
C2
C5
2036
3131
Stud torque (2N6691, 2N6693 only), test condition D2; torque = 15 inch-
pound; time = 15 s.
See 4.3.1, RθJC = 1.0°C for 2N6676, 2N6676T1, 2N6678, 2N6678T1,
2N6691, 2N6693; RθJC = 1.3°C for 2N6676T3, 2N6678T3.
C6
C6
1026
1037
For eutectic die attach: VCB ≥ 100 V dc; adjust PT to achieve TJ =
+175°C minimum; TA = +30°C maximum.
For solder die attach: 6,000 cycles, VCB ≥ 100 V dc.
11
MIL-PRF-19500/538F
*
4.4.4 Group D inspection. Conformance inspection for hardness assured JANS, JANJ, and JANTXV types shall
include the group D tests specified in table II herein. These tests shall be performed as required in accordance with
MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for
neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other
subgroups.
*
4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical
measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Insulation resistance test. Insulation resistance test conditions are as follows: Method 1016 of
MIL-STD-750, short collector, emitter and base terminals together. Limit is 109 Ω minimum.
12
MIL-PRF-19500/538F
* TABLE I. Group A inspection.
Inspection 1/
Subgroup 1
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
2071
Min
Max
Visual and mechanical
examination
Subgroup 2
Thermal impedance
3131
3011
See 4.3.1
Z
°C/W
θJX
Collector to base
breakdown voltage
Bias condition D, I = 200 mA dc;
C
pulsed (see 4.5.1)
V
(BR)CEO
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
300
400
V dc
V dc
Collector to emitter
cutoff current
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
3041
3041
3036
Bias condition A, VBE = -1.5 V dc
I
I
1
µA dc
CEX1
CEX2
V
V
= 450 V dc
= 650 V dc
CEX
CEX
Collector to emitter
cutoff current
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
Bias condition A, VBE = -1.5 V dc
V
V
= 300 V dc
= 400 V dc
500
500
nA
nA
CEX
CEX
Collector to base cutoff
current
Bias condition D;
I
1.0
mA dc
CBO
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
V
V
= 450 V dc
= 650 V dc
CBO
CBO
Emitter-base cutoff current
Base emitter voltage
3061
3066
Bias condition D, V
= 8 V dc
I
2.0
1.5
mA dc
V dc
EB
EBO
Test condition A; I = 15 A dc;
V
C
BE(sat)
pulsed (see 4.5.1); I = 3 A dc
B
Collector to emitter
saturated voltage
3071
I
I
= 15 A dc; pulsed (see 4.5.1)
= 3 A dc
V
1.0
V dc
C
B
CE(sat)1
Forward-current transfer
ratio
3076
3076
V
= 3 V dc; I = 1 A dc;
h
h
15
8
40
20
CE
C
FE1
FE2
pulsed (see 4.5.1)
Forward-current transfer
ratio
V
= 3 V dc; I = 15 A dc;
C
CE
pulsed (see 4.5.1)
See footnote at end of table.
13
MIL-PRF-19500/538F
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
3041
Conditions
Min
Max
Subgroup 3
High-temperature operation:
Collector to emitter cutoff current
T
A
= +125°C
I
50
µA dc
CEX3
Bias condition A; V
= -1.5 V dc
BE
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
V
= 450 V dc
CEX
V
= 650 V dc
CEX
Collector to emitter
saturated voltage
3071
3041
I
= 15 A dc; I = 3 A dc;
V
2.0
V dc
C
B
CE(sat)2
pulsed (see 4.5.1)
Collector to emitter cutoff current
Bias condition A, VBE = -1.5 V dc
I
CEX4
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
V
V
= 300 V dc
= 400 V dc
90
90
µA
µA
CEX
CEX
Low-temperature operation :
Forward-current transfer ratio
T
= -55°C
A
3076
3306
h
4
FE3
V
= 3 V dc I = 15 A dc; pulsed
C
CE
(see 4.5.1)
Subgroup 4
|h
|
Magnitude of common emitter
small-signal short-circuit
forward- current transfer ratio
V
CE
MHz
= 10 V dc; I = 1 A dc; f = 5
3
10
fe
C
Open capacitance
(open circuit)
3236
3251
V
= 10 V dc; I = 0;
C
obo
150
500
pF
CB
E
100 kHz ≤ f ≤ 1.0 MHz
Pulse response:
T
A
= +25°C; Test condition A,
except test circuit and pulse
requirement in accordance with
figure 12
*
Pulse delay time
Pulse rise time
Pulse storage time
Pulse fall time
Cross over time
Subgroup 5
t
0.1
0.6
2.5
0.5
0.5
µs
µs
µs
µs
µs
d
t
r
t
s
t
f
t
c
T
C
= +25°C
*
Safe operating area
(dc operation)
3051
t = 1 s; 1 cycle; (see figure 13)
Test 1
(All device types)
V
= 11.7 V dc; I = 15 A dc
C
CE
See footnote at end of table.
14
MIL-PRF-19500/538F
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
Min
Max
Subgroup 5 - Continued
Test 2
(2N6676, 2N6678,
2N6676T1, 2N6676T3,
2N6678T1, 2N6678T3)
V
= 30 V dc; I = 5.9 A dc
CE C
Test 3
(All device types)
V
V
= 100 V dc; I = 0.25 A dc
C
CE
CE
Test 4
(2N6691, 2N6693)
= 25 V dc; I = 7 A dc
C
Test 5
(2N6676, 2N6678,
2N6676T1, 2N6676T3,
2N6678T1, 2N6678T3 )
(2N6691, 2N6693)
V
V
= 300 V dc; I = 20 mA dc
C
CE
CE
= 400 V dc; I = 10 mA dc
C
*
Safe operating area
(clamped switching)
3053
T
= +25°C, V
= 15 V dc (see
A
CC
figure 14 ); Load condition B, V
BB2
= 1.5
= 5.0 V, R
= 5 Ω; R
BB2
BB1
Ω; L = 50 µH;
R of inductor = 0.05 Ω,
=R of inductor
R
load
2N6676, 2N6676T1,
2N6676T3, 2N6691
Clamp voltage = 350 V dc; I = 15
C
A dc
2N6678, 2N6678T1,
2N6678T3, 2N6693
Clamp voltage = 450 V dc; I = 15
C
A dc
Electrical measurements
Subgroup 6
Table I, subgroup 2 herein.
Not applicable
Subgroup 7
Insulation resistance
1016
See 4.5.2
RISO
1x109
Ω
( 2N6676T1, 2N6676T3,
2N6678T1, 2N6678T3, 2N6691
and 2N6693 only)
1/ For sampling plan see MIL-PRF 19500.
15
MIL-PRF-19500/538F
* TABLE II. Group D inspection.
Inspection 1/ 2/ 3/
Subgroup 1 4/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
Min
Max
Neutron irradiation
1017
3011
Neutron exposure Vces = 0V
Collector to base
breakdown voltage
Bias condition D, I = 200 mA dc;
C
pulsed (see 4.5.1)
V
(BR)CEO
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
300
400
V dc
V dc
Collector to emitter
cutoff current
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
3041
3041
3036
Bias condition A, VBE = -1.5 V dc
I
I
2
µA dc
CEX1
V
V
= 450 V dc
= 650 V dc
CEX
CEX
Collector to emitter
cutoff current
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
Bias condition A, VBE = -1.5 V dc
CEX2
V
V
= 300 V dc
= 400 V dc
1.0
1.0
uA
uA
CEX
CEX
Collector to base cutoff
current
Bias condition D;
I
2.0
mA dc
CBO
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
V
V
= 450 V dc
= 650 V dc
CBO
CBO
Emitter-base cutoff current
Base emitter voltage
3061
3066
Bias condition D, V
= 8 V dc
I
4.0
mA dc
V dc
EB
EBO
Test condition A; I = 15 A dc;
V
1.73
C
BE(sat)
pulsed (see 4.5.1); I = 3 A dc
B
Collector to emitter
saturated voltage
3071
I
I
= 15 A dc; pulsed (see 4.5.1)
= 3 A dc
V
1.15
V dc
C
B
CE(sat)1
Forward-current transfer
ratio
3076
3076
V
= 3 V dc; I = 1 A dc;
[7.5]
[4]
40
20
CE
C
[hFE1] 5/
[hFE2] 5/
pulsed (see 4.5.1)
Forward-current transfer
Ratio
V
= 3 V dc; I = 15 A dc;
C
CE
pulsed (see 4.5.1)
See footnotes at end of table.
16
MIL-PRF-19500/538F
* TABLE II. Group D inspection - Continued.
Inspection 1/ 2/ 3/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
1019
Min
Max
Subgroup 2
Total dose irradiation
Gamma exposure
Vces = 240V
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
Vces = 320V
Collector to base
breakdown voltage
3011
Bias condition D, I = 200 mA dc;
C
pulsed (see 4.5.1)
V
(BR)CEO
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
300
400
V dc
V dc
Collector to emitter
cutoff current
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
3041
3041
3036
Bias condition A, VBE = -1.5 V dc
I
I
2
µA dc
CEX1
V
V
= 450 V dc
= 650 V dc
CEX
CEX
Collector to emitter
cutoff current
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
Bias condition A, VBE = -1.5 V dc
CEX2
V
V
= 300 V dc
= 400 V dc
1.0
1.0
uA
uA
CEX
CEX
Collector to base cutoff
current
Bias condition D;
I
2.0
mA dc
CBO
2N6676, 2N6676T1
2N6676T3, 2N6691
2N6678, 2N6678T1
2N6678T3, 2N6693
V
V
= 450 V dc
= 650 V dc
CBO
CBO
Emitter-base cutoff current
Base emitter voltage
3061
3066
Bias condition D, V
= 8 V dc
I
4.0
mA dc
V dc
EB
EBO
Test condition A; I = 15 A dc;
V
1.73
C
BE(sat)
pulsed (see 4.5.1); I = 3 A dc
B
Collector to emitter
saturated voltage
3071
I
I
= 15 A dc; pulsed (see 4.5.1)
= 3 A dc
V
1.15
V dc
C
B
CE(sat)1
Forward-current transfer
ratio
3076
3076
V
= 3 V dc; I = 1 A dc;
[7.5]
[4]
40
20
CE
C
[hFE1] 5/
[hFE2] 5/
pulsed (see 4.5.1)
Forward-current transfer
ratio
V
= 3 V dc; I = 15 A dc;
C
CE
pulsed (see 4.5.1)
See footnotes at end of table.
17
MIL-PRF-19500/538F
* TABLE II. Group D inspection - Continued.
1/ Tests to be performed on all devices receiving radiation exposure.
2/ For sampling plan, see MIL-PRF-19500.
3/ Electrical characteristics apply to all device types unless otherwise noted.
4/ See 6.2.e herein.
5/ See method 1019, of MIL-STD-750, for how to determine [hFE] by first calculating the delta(1/hFE) from the pre and
post radiation hFE. Notice that [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can
never exceed the pre-radiation minimum hFE that it is based upon.
18
MIL-PRF-19500/538F
* TABLE III. Group E inspection (all quality levels) - for qualification and re-qualification only.
Inspection
Sample plan
MIL-STD-750
Conditions
Method
Subgroup 1
45 devices
c = 0
Thermal shock
glass strain
1056
1071
0°C to +100°C, 100 cycles.
Hermetic seal
Fine leak
Gross leak
Electrical measurements
Subgroup 2
See table I, subgroup 2 herein.
45 devices
c = 0
Blocking life
1048
1,000 hours minimum, TA = 150°C, VCB = 80 percent of
*
rated, without going over the maximum rated VCEO
.
Electrical measurements
Subgroup 4
See table I, subgroup 2 herein.
Thermal impedance curves
Subgroup 5
See table E-IX of MIL-PRF-19500, group E, subgroup 4.
3 devices
c = 0
Barometric pressure
1001
Test condition C, see 1.3. Unless otherwise specified, the
device shall be subjected to the maximum voltage it would
be subjected to under rated operating conditions.
*
Subgroup 6
ESD
3 devices
1020
1033
Subgroup 8
45 devices
c = 0
Reverse stability
Condition A.
19
MIL-PRF-19500/538F
NOTES:
1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will
J
intersect the appropriate power for the desired maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (TJ ≤ +200°C) and power rating
specified. (See 1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curves chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 6. Temperature derating graph (all except T3 (TO-257AA) packages).
20
MIL-PRF-19500/538F
NOTES:
1. All devices are capable of operating at ≤ T specified on this curve. Any parallel line to this curve will
J
intersect the appropriate power for the desired maximum T allowed.
J
2. Derate design curve constrained by the maximum junction temperature (TJ ≤ +200°C) and power rating
specified. (See 1.3 herein.)
3. Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.
4. Derate design curves chosen at TJ ≤ +125°C, and +110°C to show power rating where most users want to limit
TJ in their application.
FIGURE 7. Temperature derating graph for T3 (TO-257AA) packages.
21
MIL-PRF-19500/538F
Maximum Thermal Impedance
TO-3 Package, Tc=25C
10
1
0.1
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time (s)
RθJC = 1.0 °C/W max.
FIGURE 8. Thermal impedance graphs (2N6676 and 2N6678).
22
MIL-PRF-19500/538F
Maximum Thermal Impedance
TO-61 package, TC = 25°C
10
1
0.1
0.01
0.00001
0.001
0.000001
0.0001
0.01
0.1
1
10
Time (s)
RθJC = 1.0 °C/W max.
FIGURE 9. Thermal impedance graphs (2N6691 and 2N6693).
23
MIL-PRF-19500/538F
Maximum Thermal Impedance
TO-254 Package, Tc=25C
10
1
0.1
0.01
0.1
0.00001
0.001
0.01
1
10
0.000001
0.0001
Time (s)
RθJC = 1.0 °C/W max.
FIGURE 10. Thermal impedance graphs (2N6676T1 and 2N6678T1).
24
MIL-PRF-19500/538F
Maximum Thermal Impedance
TO-257 Package, Tc=25C
10
1
0.1
0.01
0.000001
1
0.00001
0.0001
0.001
0.01
0.1
10
Time (s)
RθJC = 1.3 °C/W max.
FIGURE 11. Thermal impedance graphs (2N6676T3 and 2N6678T3).
25
MIL-PRF-19500/538F
FIGURE 12. Pulse response test circuit.
26
MIL-PRF-19500/538F
NOTES:
1. The rise time (tr ) of the applied pulse shall be ≤ 20 ns; duty cycle ≤ 2 percent; generator source impedance
shall be 50 ohms.
2. Output sampling oscilloscope: Zin ≥ 100 k ohms; Cin ≤ 12 pF; rise time ≤ 5 ns.
FIGURE 12. Pulse response test circuits - Continued.
27
MIL-PRF-19500/538F
Safe Operating Area, Mil-Prf-19500/538
100
10
Ic (A)
1
1ms
10ms
0.1
100ms
DC
2N6676, T1, T3, 2N6691 300 V dc Max
2N6678, T1, T3, 2N6693 400 V dc Max
0.01
1000
10
100
Vce (V)
1
FIGURE 13. Maximum safe operating graph (dc).
28
MIL-PRF-19500/538F
FIGURE 14. Safe operating area for switching between saturation and cutoff
(clamped inductive load) (all devices).
29
MIL-PRF-19500/538F
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these
personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or
Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the
managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
*
*
e. For acquisition of RHA designed devices, table II, subgroup 1 testing of group D is optional. If subgroup 1
testing is desired, it should be specified in the contract.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or
not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA
Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An
online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.daps.dla.mil .
6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
30
MIL-PRF-19500/538F
*
6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHC2N2434A) will be identified on the QML.
JANC ordering information
PIN
Manufacturer
34611
2N6676
2N6678
JANHCA2N6676
JANKCA2N6676
JANHCA2N6678
JANKCA2N6678
Custodians:
Army - CR
Air Force - 85
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2010-058)
Review activities:
Army - MI
Air Force - 19, 99
* NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.daps.dla.mil.
31
相关型号：
JANTXV2N6764T1
Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN
MICROSEMI
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