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元器件品牌
MGF4953B
[MITSUBISHI]
SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package; 超低噪音的InGaAs HEMT无引线陶瓷封装
元器件型号：
MGF4953B
生产厂家：
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：
SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package
超低噪音的InGaAs HEMT无引线陶瓷封装
晶体 小信号场效应晶体管 射频小信号场效应晶体管 放大器
PDF文件：
总5页 (文件大小：119K)
下载文档：
下载PDF数据表文档文件
型号参数：MGF4953B参数
查看货源
MGF4953B_11
Low Noise GaAs HEMT
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156
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30
MITSUBISHI
MGF4953B-01
RF Small Signal Field-Effect Transistor, N-Channel
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156
-
0
MITSUBISHI
MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
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156
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80
MITSUBISHI
MGF4955A
RF Small Signal Field-Effect Transistor, N-Channel
Warning
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on line
156
-
0
MITSUBISHI
MGF4957A
RF Small Signal Field-Effect Transistor, N-Channel
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156
-
0
MITSUBISHI
MGF4961B
SUPER LOW NOISE InGaAs HEMT
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156
-
138
MITSUBISHI
MGF4963BL
Low Noise GaAs HEMT
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156
-
101
MITSUBISHI
MGF4964BL
Low Noise GaAs HEMT
Warning
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156
-
134
MITSUBISHI
MGF65A3H
Trench Field Stop IGBTs with Fast Recovery Diode
Warning
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on line
156
-
0
SANKEN
MGF65A4H
Trench Field Stop IGBTs with Fast Recovery Diode
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156
-
2
SANKEN
MGF65A6L
VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode
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156
-
0
SANKEN
MGF-7002A
RF/Microwave Amplifier, GAAS
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on line
156
-
0
MITSUBISHI
MGF7004
Transistor
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on line
156
-
0
MITSUBISHI
MGF7006
Wide Band Low Power Amplifier, 200MHz Min, 1800MHz Max,
Warning
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on line
156
-
0
MITSUBISHI
MGF7006-01
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
Warning
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156
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0
MITSUBISHI
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