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元器件品牌
MGFC42V6472A
[MITSUBISHI]
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET; 6.4 - 7.2GHz波段16W内部匹配的GaAs FET
元器件型号：
MGFC42V6472A
生产厂家：
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
6.4 - 7.2GHz波段16W内部匹配的GaAs FET
晶体 射频场效应晶体管 功效 放大器 局域网
PDF文件：
总3页 (文件大小：220K)
下载文档：
下载PDF数据表文档文件
型号参数：MGFC42V6472A参数
查看货源
MGFC42V7177
C band Internally Matched Power GaAs FET
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156
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15
MITSUBISHI
MGFC42V7785A
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
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6
MITSUBISHI
MGFC42V7785A
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
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8
MITSUBISHI
MGFC42V7785A
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
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156
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MITSUBISHI
MGFC42V7785A
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN
Warning
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156
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0
MITSUBISHI
MGFC42V7785A_04
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
Warning
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156
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13
MITSUBISHI
MGFC4414D-02
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
MITSUBISHI
MGFC4414D-02
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
MITSUBISHI
MGFC4418D-02
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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1
MITSUBISHI
MGFC4418D-03
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
MITSUBISHI
MGFC4418D-03
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
MITSUBISHI
MGFC4418E-03
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
MITSUBISHI
MGFC4418E-03
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MITSUBISHI
MGFC4419G
InGaAs HEMT Chip
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156
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29
MITSUBISHI
MGFC4419G
InGaAs HEMT Chip
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156
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31
MITSUBISHI
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