MSN06M3E-SOT23 [MORESEMI]
60V(D-S) N-Channel Enhancement Mode Power MOS FET;
| 型号： | MSN06M3E-SOT23 |
| 厂家： | 
MORE Semiconductor |
| 描述： | 60V(D-S) N-Channel Enhancement Mode Power MOS FET |
| 文件： | 总6页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSN06M3E
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 60V,ID = 0.3A
RDS(ON) < 3Ω @ VGS=5V
RDS(ON) < 2Ω @ VGS=10V
ESD Rating：HBM 2300V
Lead Free
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected
Application
●Direct logic-level interface: TTL/CMOS
●Drivers: relays, solenoids, lamps, hammers,display,
memories, transistors, etc.
Marking and pin assignment
●Battery operated systems
●Solid-state relays
PIN Configuration
Schematic diagram
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Ø180mm
Tape width
Quantity
MSN06M3E
SOT-23
8 mm
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
±20
0.3
VGS
TA =25℃
Continuous Drain Current (TJ =150℃)
A
ID
TA =100℃
0.19
0.8
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
A
IDM
PD
0.35
W
℃
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
350
℃/W
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MSN06M3E
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±10V,VDS=0V
60
-
68
-
-
V
1
μA
nA
uA
-
±100
±4
±500
±10
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=5V, ID=0.4A
VGS=10V, ID=0.5A
VDS=10V,ID=0.2A
1
-
1.7
1.3
1
2.5
3
V
Ω
Ω
S
Drain-Source On-State Resistance
-
2
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
0.1
-
-
Clss
Coss
Crss
-
-
-
21
11
50
25
5
PF
PF
PF
VDS=25V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
4.2
td(on)
tr
td(off)
tf
-
-
-
-
10
50
17
10
-
-
-
-
nS
nS
nS
nS
Turn-on Rise Time
VDD=30V,ID=0.2A
VGS=10V,RGEN=10Ω
Turn-Off Delay Time
Turn-Off Fall Time
V
DS=10V,ID=0.3A,
Total Gate Charge
Qg
-
1.7
3
nC
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
IS
VGS=0V,IS=0.2A
-
-
-
-
1.3
0.2
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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MSN06M3E
Typical Electrical And Thermal Characteristics
Vdd
ton
tr
toff
tf
td(on)
VOUT
VIN
td(off)
Rl
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
G
10%
50%
S
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 3 Output Characteristics
Figure 4 Transfer Characteristics
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 5 Drain-Source On-Resistance
Figure 6 Rdson vs Vgs
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MSN06M3E
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 7 Gate Charge
Figure 8 Source-DrainDiode Forward
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 9 Drain-Source On-Resistance
Figure 10 Safe Operation Area
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
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MSN06M3E
Square Wave Pluse Duration(sec)
Figure 12 Normalized Maximum Transient Thermal Impedance
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MSN06M3E
SOT-23 Package Information
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.100
1.050
0.500
c
0.150
D
3.000
E
1.400
E1
e
2.550
0.950TYP
2.000
e1
L
1.800
0.550REF
0.500
L1
θ
0.300
0°
8°
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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