BCP68T1 [MOTOROLA]
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT; 中功率NPN硅高电流晶体管的表面贴装
| 型号： | BCP68T1 |
| 厂家： | 
MOTOROLA |
| 描述： | MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT |
| 文件： | 总6页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by BCP68T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current
applications. The device is housed in the SOT-223 package, which is designed for
medium power surface mount applications.
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
•
•
•
High Current: I = 1.0 Amp
C
The SOT-223 Package can be soldered using wave or reflow.
SURFACE MOUNT
SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
4
•
•
Available in 12 mm Tape and Reel
Use BCP68T1 to order the 7 inch/1000 unit reel.
Use BCP68T3 to order the 13 inch/4000 unit reel.
1
2
3
COLLECTOR 2,4
CASE 318E-04, STYLE 1
TO-261AA
BASE
1
The PNP Complement is BCP69T1
EMITTER 3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
Value
25
20
5
Unit
V
CEO
V
CBO
V
EBO
Vdc
Vdc
Vdc
Adc
Emitter-Base Voltage
Collector Current
I
C
1
(1)
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
A
Operating and Storage Temperature Range
T , T
–65 to 150
°C
J
stg
DEVICE MARKING
CA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction-to-Ambient (surface mounted)
R
83.3
°C/W
θJA
Maximum Temperature for Soldering Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I = 100 µAdc, I = 0)
V
25
20
5.0
—
—
—
—
—
—
—
—
—
10
10
Vdc
Vdc
(BR)CES
(BR)CEO
(BR)EBO
C
E
Collector-Emitter Breakdown Voltage
(I = 1.0 mAdc, I = 0)
V
V
C
B
Emitter-Base Breakdown Voltage
(I = 10 µAdc, I = 0)
Vdc
E
C
Collector-Base Cutoff Current
(V = 25 Vdc, I = 0)
I
µAdc
µAdc
CBO
CB
Emitter-Base Cutoff Current
(V = 5.0 Vdc, I = 0)
E
I
—
EBO
EB
C
ON CHARACTERISTICS (2)
DC Current Gain
h
FE
—
(I = 5.0 mAdc, V
= 10 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
50
85
60
—
—
—
—
375
—
C
CE
CE
CE
(I = 500 mAdc, V
C
(I = 1.0 Adc, V
C
Collector-Emitter Saturation Voltage
(I = 1.0 Adc, I = 100 mAdc)
V
—
—
0.5
Vdc
Vdc
CE(sat)
C
B
Base-Emitter On Voltage
(I = 1.0 Adc, V = 1.0 Vdc)
V
BE(on)
—
—
1.0
C
CE
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
f
T
—
60
—
MHz
(I = 10 mAdc, V
= 5.0 Vdc)
C
CE
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
TYPICAL ELECTRICAL CHARACTERISTICS
300
200
300
200
T
= 125°C
J
= 25°C
100
100
= –55°C
70
50
V
= 10 V
CE
= 25°C
T
J
f = 30 MHz
V
= 1.0 V
CE
10
1.0
30
10
100
1000
10
100
I , COLLECTOR CURRENT (mA)
C
200
1000
I
, COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
Figure 2. Current-Gain-Bandwidth Product
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
0.8
80
T
= 25°C
J
T
= 25°C
J
V
@ I /I = 10
C B
BE(sat)
70
60
50
40
30
0.6
0.4
0.2
0
V
@ V = 1.0 V
CE
BE(on)
V
@ I /I = 10
C B
CE(sat)
5.0
1.0
10
100
1000
0
1.0
2.0
V , REVERSE VOLTAGE (VOLTS)
R
3.0
4.0
I
, COLLECTOR CURRENT (mA)
C
Figure 3. “On” Voltage
Figure 4. Capacitance
25
20
15
10
5.0
–0.8
–1.2
–1.6
–2.0
T
= 25°C
J
R
for V
VB BE
θ
–2.4
–2.8
0
5.0
V
10
15
20
1.0
10
, COLLECTOR CURRENT (mA)
C
100
1000
, REVERSE VOLTAGE (VOLTS)
I
R
Figure 5. Capacitance
Figure 6. Base-Emitter Temperature Coefficient
1.0
0.8
T
= 25°C
J
0.6
= 1000 mA
I
= 10 mA
= 100 mA
= 50 mA
0.4
0.2
0
C
= 500 mA
0.01
0.1
1.0
, BASE CURRENT (mA)
10
100
I
B
Figure 7. Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.15
3.8
0.079
2.0
0.248
6.3
0.091
2.3
0.091
2.3
0.079
2.0
inches
mm
0.059
1.5
0.059
1.5
0.059
1.5
SOT-223
SOT-223 POWER DISSIPATION
The power dissipation of the SOT-223 is a function of the
power dissipation can be increased. Although the power
dissipation can almost be doubled with this method, area is
taken up on the printed circuit board which can defeat the
collector pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
purpose of using surface mount technology. A graph of R
versus collector pad area is shown in Figure 8.
θJA
determinedby T
ture of the die, R
junction to ambient, and the operating temperature, T .
Using the values provided on the data sheet for the SOT-223
, themaximumratedjunctiontempera-
, the thermal resistance from the device
J(max)
θJA
160
A
Board Material = 0.0625
G-10/FR-4, 2 oz Copper
″
T
= 25°C
A
140
120
package, P can be calculated as follows:
D
0.8 Watts
T
– T
A
J(max)
P
=
D
R
θJA
°
1.5 Watts
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
1.25 Watts*
100
80
the equation for an ambient temperature T of 25°C, one can
calculate the power dissipation of the device which in this
case is 1.5 watts.
A
*Mounted on the DPAK footprint
0.0
0.2
0.4
0.6
0.8
1.0
150°C – 25°C
P
=
= 1.5 watts
D
A, Area (square inches)
83.3°C/W
Figure 8. Thermal Resistance versus Collector
Pad Area for the SOT-223 Package (Typical)
The 83.3°C/W for the SOT-223 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 1.5 watts. There are
other alternatives to achieving higher power dissipation from
the SOT-223 package. One is to increase the area of the
collector pad. By increasing the area of the collector pad, the
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad . Using a
board material such as Thermal Clad, an aluminum core board,
the power dissipation can be doubled using the same footprint.
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SOT-223 package should be
the same as the pad size on the printed circuit board, i.e., a
1:1 registration.
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•
•
•
The soldering temperature and time should not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
•
Mechanical stress or shock should not be applied during
cooling
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177–189°C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a
figure for belt speed. Taken together, these control settings
make up a heating “profile” for that particular circuit board.
On machines controlled by a computer, the computer
remembers these profiles from one operating session to the
next. Figure 9 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems but it is a good
starting point. Factors that can affect the profile include the
type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT COOLING
STEP 7
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 2
VENT
“SOAK”
STEP 3
HEATING
ZONES 2 & 5
“RAMP”
205°
TO
219°C
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
200°C
PEAK AT
SOLDER
JOINT
160°C
150°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
100°C
140°C
MASS OF ASSEMBLY)
100°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50°C
T
TIME (3 TO 7 MINUTES TOTAL)
MAX
Figure 9. Typical Solder Heating Profile
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
2
INCHES
MILLIMETERS
S
B
DIM
A
B
C
D
F
G
H
J
K
L
M
S
MIN
MAX
0.263
0.145
0.068
0.035
0.126
0.094
MIN
6.30
3.30
1.50
0.60
2.90
2.20
0.020
0.24
1.50
0.85
0
MAX
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
1
3
0.249
0.130
0.060
0.024
0.115
0.087
D
L
0.0008 0.0040
G
0.009
0.060
0.033
0
0.014
0.078
0.041
10
J
C
0.08 (0003)
0.264
0.287
6.70
7.30
M
H
K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 318E–04
ISSUE H
TO-261AA
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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BCP68T1/D
◊
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