MMDL6050T1 [MOTOROLA]
0.2A, SILICON, SIGNAL DIODE, SOD-323, 2 PIN;
| 型号： | MMDL6050T1 |
| 厂家： | 
MOTOROLA |
| 描述： | 0.2A, SILICON, SIGNAL DIODE, SOD-323, 2 PIN 二极管 |
| 文件： | 总4页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MMDL6050T1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
1
CATHODE
ANODE
2
CASE 477–02, STYLE 1
SOD323
MAXIMUM RATINGS
Rating
Symbol
Value
70
Unit
Vdc
Reverse Voltage
Forward Current
V
R
I
F
200
500
mAdc
mAdc
Peak Forward Surge Current
I
FM(surge)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,*
P
200
mW
D
T
= 25°C
A
Derate above 25°C
1.57
635
150
mW/°C
°C/W
°C
Thermal Resistance Junction to Ambient
R
θJA
Junction and Storage Temperature
**FR-4 Minimum Pad
T , T
J
stg
DEVICE MARKING
MMDL6050T1 = 5A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
(BR)
= 100 µAdc)
V
70
—
—
Vdc
(BR)
Reverse Voltage Leakage Current
(V = 50 Vdc)
R
I
R
0.1
µAdc
Forward Voltage
V
F
Vdc
(I = 1.0 mAdc)
0.55
0.85
0.7
1.1
F
(I = 100 mAdc)
F
Reverse Recovery Time
t
rr
—
4.0
ns
(I = I = 10 mAdc, I
= 1.0 mAdc) (Figure 1)
F
R
R(REC)
Capacitance (V = 0 V)
C
—
2.5
pF
R
Motorola, Inc. 1999
820
Ω
I
F
+10 V
t
t
t
2.0 k
r
p
0.1 µF
I
F
t
t
100
F
µH
rr
10%
90%
0.1
µ
DUT
i
= 1.0 mA
R(REC)
50
Ω
OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
TYPICAL CHARACTERISTICS
100
10
T
= 150
= 125
°
C
C
A
T
= 85°C
A
T
°
A
T
= –40°C
A
1.0
0.1
10
1.0
0.1
T
= 85
= 55
°
C
C
A
T
= 25°C
A
T
°
A
0.01
0.001
T
= 25
°
C
A
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
, REVERSE VOLTAGE (VOLTS)
R
30
40
50
V , FORWARD VOLTAGE (VOLTS)
V
F
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
8.0
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
K
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
1
B
D
2
MILLIMETERS
INCHES
DIM
A
B
C
D
MIN
1.60
1.15
0.80
0.25
MAX
1.80
1.35
1.00
0.40
MIN
MAX
0.071
0.053
0.039
0.016
0.063
0.045
0.031
0.010
E
C
E
H
J
K
0.15 REF
0.006 REF
0.00
0.089
2.30
0.10
0.000
0.004
0.177 0.0035 0.0070
2.70 0.091 0.106
STYLE 1:
PIN 1. CATHODE
2. ANODE
H
J
NOTE 3
CASE 477–02
ISSUE A
SOD323
0.63 mm
0.025
1.60 mm
0.063
2.85 mm
0.112
0.83 mm
0.033
mm
inches
SOD–323
Soldering Footprint
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
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