MRF18060AS [MOTOROLA]
L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN;
| 型号： | MRF18060AS |
| 厂家： | 
MOTOROLA |
| 描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN 放大器 CD 晶体管 |
| 文件： | 总6页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M OT O RO LA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
M
R
F
1
8
0
6
0
A
R
F
P
o
w
e
r
F
i
e
l
d
E
f
f
e
c
t
T
r
a
n
s
i
s
t
o
r
s
MR F 1806 0A R 3
MR F 1806 0A S
MR F 1806 0AS R 3
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1805 – 1880 MHz.
1.80 – 1.88 GHz, 60 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
•
Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts
Efficiency — 45% (Typ) @ 60 Watts
•
•
•
•
•
•
•
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts (CW) Output Power
Excellent Thermal Stability
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
13 Inch Reel.
CASE 465–06, STYLE 1
(NI–780)
(MRF18060A)
CASE 465A–06, STYLE 1
(NI–780S)
(MRF18060AS)
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Drain–Source Voltage
Gate–Source Voltage
V
DSS
Vdc
Vdc
V
GS
+15, –0.5
Total Device Dissipation @ T ≥ 25°C
P
D
180
Watts
C
Derate above 25°C
1.03
W/°C
Storage Temperature Range
Operating Junction Temperature
T
–65 to +150
200
°C
°C
stg
T
J
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
Machine Model
2 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.97
°C/W
θ
JC
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF18060A MRF18060AR3 MRF18060AS MRF18060ASR3
5.2–213
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V = 0 Vdc, I = 10 µAdc)
V
65
—
—
—
—
—
—
6
Vdc
µAdc
µAdc
(BR)DSS
GS
D
Zero Gate Voltage Drain Current
(V = 26 Vdc, V = 0 Vdc)
I
DSS
DS
GS
Gate–Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GSS
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
2
—
3.9
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
(V = 10 Vdc, I = 300 µAdc)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 500 mAdc)
2.5
—
—
4.5
—
—
DS
D
Drain–Source On–Voltage
(V = 10 Vdc, I = 2 Adc)
V
0.27
4.7
GS
D
Forward Transconductance
(V = 10 Vdc, I = 2 Adc)
g
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
C
—
—
—
160
740
2.7
—
—
—
pF
pF
pF
iss
(V = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Output Capacitance (1)
C
oss
(V = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Reverse Transfer Capacitance
C
rss
(V = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain @ 60 W (2)
G
dB
%
ps
(V = 26 Vdc, I = 500 mA, f = 1805 – 1880 MHz)
11.5
13
—
DD
DQ
Drain Efficiency @ 60 W (2)
(V = 26 Vdc, I = 500 mA, f = 1805 – 1880 MHz)
η
43
—
45
—
—
DD
DQ
Input Return Loss (2)
(V = 26 Vdc, P = 60 W CW, I = 500 mA,
IRL
–10
dB
DD
out
DQ
f = 1805 – 1880 MHz)
Output Mismatch Stress
Ψ
No Degradation In Output Power
Before and After Test
(V = 26 Vdc, P = 60 W CW, I = 500 mA VSWR = 10:1,
DD
out
DQ
All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch
consistency.
MRF18060A MRF18060AR3 MRF18060AS MRF18060ASR3
5.2–214
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
R
R
2
1
T1
Z
6
V
D D
+
R3
C4
C
3
R
4
V
G G
C
1
C2
RF
O
UT
P
UT
R
5
Z4
Z5
Z7
R
F
I NP UT
C7
Z1
Z2
Z3
C6
C5
D
U
T
C1
C2, C4, C7
C3
C5
C6
R1, R3
R2, R4
R5
100 nF Chip Capacitor (1203)
10 pF Chip Capacitors
10 mF, 35 V Electrolytic Tantalum Capacitor
1.2 pF Chip Capacitor
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.47″ x 0.09″ Microstrip
1.16″ x 0.09″ Microstrip
0.57″ x 0.95″ Microstrip
0.59″ x 1.18″ Microstrip
1.26″ x 0.15″ Microstrip
1.15″ x 0.09″ Microstrip
0.37″ x 0.09″ Microstrip
1.0 pF Chip Capacitor
2.2 kΩ Chip Resistors (0805)
2.7 kΩ Chip Resistors (0805)
1.1 kΩ Chip Resistor (0805)
BC847 Transistor SOT–23
T1
Figure 1. 1805 – 1880 MHz Test Fixture Schematic
V
V
SU PP LY
BI
AS
C
3
C
R
1
4
R2
R3
C4
R
1
C
2
T1
R5
C7
C
6
C
5
G
r
o
u
n
d
G
r
o
u
n
d
MRF18060
Figure 2. 1805 – 1880 MHz Test Fixture Component Layout
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF18060A MRF18060AR3 MRF18060AS MRF18060ASR3
5.2–215
V
bi as
C
1
T1
R1
R5
R2
V
s upp l y
+
C
C
2
3
C4
R
3
T2
R
4
C5
R
6
R
F
RF
I
N
P
UT
O
U
T
P
UT
Z
6
Z
7
Z1
Z2
Z3
Z4
Z5
C
7
C8
C
6
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
1 mF Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
T1
T2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
LP2951 Micro–8 Voltage Regulator
BC847 SOT–23 NPN Transistor
0.159″ x 0.055″ Microstrip
0.982″ x 0.055″ Microstrip
0.087″ x 0.055″ Microstrip
0.512″ x 0.787″ Microstrip
0.433″ x 1.220″ Microstrip
1.039″ x 0.118″ Microstrip
0.268″ x 0.055″ Microstrip
10 pF Chip Capacitors, ACCU–P (0805)
10 mF, 35 V Tantalum Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU–P (0805)
1 pF Chip Capacitor, ACCU–P (0805)
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
R4
2.2 kΩ Chip Resistor (0805)
Substrate = 0.5 mm Teflon Glass, ε = 2.55
r
R5
5 kΩ, SMD Potentiometer
Figure 3. 1800 – 2000 MHz Demo Board Schematic
V
b i a s
G
ro
u
nd
V
s upp l y
C4
R1
C
1
R
R
2
3
T
1
R
4
R5
T
2
C
2
C
3
C
5
R
6
C
8
C
7
C
6
MRF18060
Figure 4. 1800 – 2000 MHz Demo Board Component Layout
MRF18060A MRF18060AR3 MRF18060AS MRF18060ASR3
5.2–216
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
1
6
1
0
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
1
5
I
=
75
0
m
A
D
Q
P
i n
=
5
W
1 4
1 3
1 2
5
0
0
mA
2
.5
W
3
0
0
mA
1
1
1
W
1
0
1
0
0
m
A
V
f
=
1
2
6
V dc
MH z
D D
=
V
D D
=
2
6
V
d
c
9
8
0
0
8
8
0
I
=
5
0
0
mA
D Q
1
1
0
1
00
1
8
2
0
2
2
2
4
2
6
2
8
3
0
P
o ut
,
O
UT
P
UT
P
OW
E
R
(
W
A
T
T
S
)
V
D D
,
S
UP
P
L
Y
V
O
L
T
A
G
E
(V O LTS)
Figure 5. Power Gain versus
Output Power
Figure 6. Output Power versus Supply Voltage
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
6
5
5
4
4
3
3
2
0
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
P
i n
=
6
W
5
0
5
0
5
0
5
3
W
h
P
ou t
V
=
=
2
6
0
V dc
mA
D D
I
5
0
D Q
1
W
V
I
f
=
=
1
2
6
0
Vd c
mA
D
D
5
0
0
.
5
W
D Q
0
0
2
1
0
5
0
0
=
8
8
0
MH
z
1
8
0
0
18
20
1
8
4
0
1
8
6
0
1
8
8
0
1
90
0
0
1
2
3
T
4
5
6
f
,
F
R
E
Q
UE
NC
Y
(
M
H
z
)
P
,
i n
I
N
P
U
P
O
W
E
R
(
W
A
T
T
S
)
Figure 7. Output Power versus Frequency
Figure 8. Output Power and Efficiency
versus Input Power
1
5
.
0
0
-
-
-
-
-
-
-
-
2
4
6
8
1
1
1
1
1
1
1
1
1
1
4
4
3
3
2
2
.
.
.
.
.
.
.
.
5
0
5
0
5
0
5
0
G
p
s
0
2
4
6
1
1
1
1
I
R
L
V
I
=
=
2
6
0
V dc
mA
D
D
-
-
1
2
8
0
5
0
1
1
0
0
.5
0
D
Q
.
1
7
0
0
1
8
0
0
1
9
0
0
2
0
0
0
2
1
0
0
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 9. Wideband Gain and IRL
(at Small Signal)
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
MRF18060A MRF18060AR3 MRF18060AS MRF18060ASR3
5.2–217
Z
0
i n
f
=
2
10
0
MH z
f
=
17
0
0
M Hz
f
=
2
1
0
MH z
f
=
1
70
0
MH z
Z
*
O L
Z
=
Ω
5
o
V
D D
=
2
6
D Q
V,
=
I
5
00
mA ,
ou t
=
P
6
0
Wa
t
ts
(C W)
f
Z
in
Z
OL
*
MHz
Ω
Ω
1700
1800
1900
2000
2100
0.60 + j2.53
0.80 + j3.20
0.92 + j3.42
1.07 + j3.59
1.31 + j4.00
2.27 + j3.44
2.05 + j3.05
1.90 + j2.90
1.64 + j2.88
1.29 + j2.99
Z
in
= Complex conjugate of the source impedance.
Z
OL
* = Complex conjugate of the optimum load at a
given voltage, P1dB, gain, efficiency, bias
current and frequency.
Note: Z * was chosen based on tradeoffs between gain,
OL
output power, and drain efficiency.
O
u
a
t
p
u
i
t
n
I
n
a
p
t
u
c
t
h
D
U
e
n
vi ce
d
M t
Ne t wo rk
ch
g
M
Ne t wor k
i
n
g
e
r
Te st
Z
Z
*
in
OL
Figure 10. Series Equivalent Input and Output Impedance
MRF18060A MRF18060AR3 MRF18060AS MRF18060ASR3
5.2–218
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
相关型号：
MRF18085A
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
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