MRF641 [MOTOROLA]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | MRF641 |
| 厂家： | 
MOTOROLA |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总4页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF641/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
•
Specified 12.5 Volt, 470 MHz Characteristics —
Output Power = 15 Watts
15 W, 470 MHz
Minimum Gain = 7.8 dB
Efficiency = 55%
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
•
•
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
Built–In Matching Network for Broadband Operation
Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @
16–Volt High Line and Overdrive
•
Circuit board photomaster available upon request by contacting RF Tactical
Marketing in Phoenix, AZ.
CASE 316–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
16
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
36
4.0
3.0
Collector Current — Continuous
I
C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
43.7
0.25
Watts
W/°C
C
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
4.0
°C/W
θJC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 20 mAdc, I = 0)
V
16
36
4.0
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 20 mAdc, V = 0)
V
(BR)CES
(BR)EBO
C
BE
Emitter–Base Breakdown Voltage
(I = 5.0 mAdc, I = 0)
V
—
Vdc
E
C
Collector Cutoff Current
(V = 15 Vdc, V = 0, T = 25°C)
I
5.0
mAdc
(continued)
CES
CE BE
C
REV 6
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 1.0 Adc, V
h
FE
30
70
150
—
= 5.0 Vdc)
CE
C
DYNAMIC CHARACTERISTICS
Output Capacitance
C
—
40
60
pF
ob
(V
CB
= 12.5 Vdc, I = 0, f = 1.0 MHz)
E
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
G
7.8
55
8.5
60
—
—
dB
%
pe
(V
CC
= 12.5 Vdc, P
= 15 W, f = 470 MHz)
out
Collector Efficiency
(V = 12.5 Vdc, P
η
= 15 W, f = 470 MHz)
CC
out
Output Mismatch Stress
(V = 16 Vdc, P = 3.0 W, f = 470 MHz,
VSWR = 20:1, All Phase Angles)
ψ
No Degradation in Output Power
CC
in
RFC1
V
12.5 V
CC
C9
C10
+
–
+
–
C7
C8
C11
BEAD
C13
L1
L2
C12
RF OUTPUT
Z4
Z5
Z6
Z7
RF INPUT
Z1
Z2
Z3
*
*
C6
C3
C4
C5
C2
C1
PARTS
NOTES
Z1 — 1.225″ x 0.187″ Microstrip
Z2 — 0.884″ x 0.187″ Microstrip
Z3 — Capacitor Block (Base)
Z4 — Collector Block
Z5 — 1.1″ x 0.187″ Microstrip
Z6 — 0.433″ x 0.187″ Microstrip
Z7 — 0.4″ x 0.187″ Microstrip
C1, C2 — 0.8–10 pF Johanson
*C5, C6, are mounted as close to the capacitor
*assembly as possible.
‡‡C3, C4 are mounted in the capacitor assembly.
C3, C4 — 24 pF Chip Caps 100 mils ATC
C5, C6 — 22 pF Chip Caps 100 mils ATC
C12 — 220 pF Chip Cap 100 mils ATC
C7, C11 — 1.0 µF Tantalum 35 Vdc
C9, C10 — 680 pF Feedthrough Allen–Bradley
C13 — 200 pF UNELCO
Board — 62.5 mil Glass Teflon, ε = 2.55.
r
C8 — 0.1 µF, 50 V Erie Red Cap
RFC1 — VK 200 — 104B Ferrite Choke
L1 — 4 Turns 0.2″ Dia. #16 AWG
L2 — 9 Turns 0.15″ Dia. #16 AWG
Dotted Area — Capacitor Assembly
Bead — Ferroxcube 56–590–65–35EB
Figure 1. Test Circuit Schematic
MRF641
2
MOTOROLA RF DEVICE DATA
30
27
24
21
18
15
12
9
25
20
15
10
V
= 12.5 V
f = 470 MHz
= 12.5 Vdc
CC
P
= 3 W
2 W
in
V
CC
1 W
6
3
0
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
380
400
420
440
460
480
500
520
540
P
, POWER INPUT (WATTS)
f, FREQUENCY (MHz)
in
Figure 2. Power Output versus Power Input
Figure 3. Power Output versus Frequency
25
20
15
10
30
27
24
21
18
15
12
9
f = 470 MHz
f = 470 MHz
V
= 12.5 Vdc
CC
P
= 2 W
in
5
0
6
3
0
8
9
10
11
12
13
14
15
16
0
0.5
1
1.5
2
2.5
P , POWER INPUT (WATTS)
in
3
3.5
4
4.5
5
V
, SUPPLY VOLTAGE (VOLTS)
CC
Figure 4. Power Output versus Supply Voltage
Figure 5. Power Saturation Profile
0
2.0
2.0
4.0
4.0
P
= 15 W, V = 12.5 V
CC
out
1.0
f = 400 MHz
420
6.0
6.0
f
Z
Z
*
OL
in
Ohms
MHz
Ohms
Z
in
450
480
8.0
8.0
400
420
450
480
510
0.6 + j4.0
0.7 + j4.2
1.0 + j5.0
1.2 + j5.2
1.7 + j6.4
3.5 – j1.2
3.4 – j0.8
3.0 + j0.5
2.7 + j1.2
2.6 + j1.6
2.0
510
480
10.
0
10.
0
510
3.0
4.0
450
420
f = 400 MHz
12.
0
Z
*
OL
Z
* = Conjugate of the load impedance into which the device output operates at a given power,
η, and frequency.
OL
Figure 6. Series Equivalent Input–Output Impedance
MOTOROLA RF DEVICE DATA
MRF641
3
PACKAGE DIMENSIONS
F
D
4
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
R
Q
K
3
INCHES
MILLIMETERS
DIM
MIN
MAX
25.14
12.95
7.62
MIN
0.960
0.490
0.235
0.210
0.085
0.200
0.720
0.004
0.405
0.150
0.150
0.115
0.120
0.470
MAX
0.990
0.510
0.300
0.220
0.120
0.210
0.730
0.006
0.440
0.160
0.170
0.130
0.130
0.495
A
B
C
D
E
F
H
J
K
L
24.38
12.45
5.97
5.33
2.16
5.08
18.29
0.10
10.29
3.81
3.81
2.92
3.05
11.94
1
2
5.58
3.04
5.33
18.54
0.15
L
11.17
4.06
B
C
J
N
Q
R
U
4.31
3.30
E
3.30
12.57
N
H
A
STYLE 1:
U
PIN 1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE
CASE 316–01
ISSUE D
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MRF641/D
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