N-HFA15PB60 [NELLSEMI]
FRED Ultrafast Soft Recovery Diode, 15 A; FRED超快软恢复二极管， 15 A
| 型号： | N-HFA15PB60 |
| 厂家： | 
NELL SEMICONDUCTOR CO., LTD |
| 描述： | FRED Ultrafast Soft Recovery Diode, 15 A |
| 文件： | 总6页 (文件大小：953K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
RoHS
N-HFA15PB60
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 15 A
FEATURES
Ultrafast and ultrasoft recovery
Very low I and Q
RRM
rr
Compliant to RoHS
Designed and qualified for industrial level
BENEFITS
TO-247AC modified
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
common
cathode
Reduced parts count
2
DESCRIPTION
HFA15PB60 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a
superb combination of characteristics which result in
performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600V and
15 A continuous current, the HFA15PB60 is especially
well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultrafast recovery time,
the FRED product line features extremely low values
1
3
Cathode
Anode
of peak recovery current (I
) and does not exhibit
RRM
PRODUCT SUMMARY
any tendency to “snap-off” during the t portion of
b
Package
lF(AV)
TO-247AC modified (2 pins)
recovery. The FRED features combine to offer
designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the
switching transistor. These FRED advantages can
help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA15PB60 is
ideally suited for applications in power supplies and
power conversion systems (such as inverters), motor
drives, and many other similar applications where high
speed, high efficiency is needed.
15A
VR
600 V
VF at lF
trr (typ.)
1.7 V
19 ns
TJ max.
150ºC
Single die
Diode variation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
VR
IF
600
15
V
T
= 100 ºC
c
lFSM
lFRM
150
60
A
T
T
= 25 ºC
74
c
c
Maximum power dissipation
PD
W
= 100 ºC
29
TJ, TStg
Operating junction and storage temperature range
- 55 to + 150
ºC
Page 1 of 6
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RoHS
RoHS
N-HFA15PB60
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
(T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
TYP.
UNITS
MIN.
Cathode to anode
breakdown voltage
-
-
VBR
IR = 100 µA
600
IF = 15 A
IF = 30 A
-
-
1.55
1.80
1.40
1.7
2.0
1.6
V
VFM
Maximum forward voltage
IF = 15 A, TJ = 125 ºC
-
VR = VR rated
TJ = 125°C, VR = VR rated
VR = 200V
-
-
1.0
400
25
10
1000
Maximum reverse
leakage current
IRM
µA
Junction capacitance
Series inductance
pF
nH
CT
LS
50
-
-
12
Measured lead to lead 5 mm from package body
-
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (T = 25 ºC unless otherwise specified)
J
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
MAX. UNITS
TYP.
IF = 0.5A, IR = 1.0A, IRR = 250mA (RG#1 CKT)
IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C
-
-
30
22
trr
-
19
ns
Reverse recovery time
trr1
trr2
-
-
TJ = 25 ºC
42
74
60
TJ = 125 ºC
120
IF= 15A
dIF/dt = -200 A/µs
VR = 200 V
IRRM1
TJ = 25 ºC
-
-
6.0
4.0
Peak recovery current
A
IRRM2
Qrr1
TJ = 125 ºC
10
6.5
80
-
-
TJ = 25 ºC
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
180
Reverse recovery charge
nC
Qrr2
220
188
160
600
-
dl(rec)M/dt1
dl(rec)M/dt2
-
Peak rate of fall of recovery
current during tb
A/µs
-
-
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063'' from case (1.6 mm) for 10 s
–
300
°C
Junction to case,
single leg conduction
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
-
-
-
1.7
RthJC
-
40
40
-
K/W
RthJA
RthCS
Typical socket mount
–
-
Mounting surface, flat, smooth and greased
0.25
-
-
6.0
-
-
g
Weight
0.21
oz.
6.0
(5.0)
12
(10)
kgf . cm
(lbf . in)
Mounting torque
Marking device
-
Case style TO-247AC (JEDEC)
HFA15PA60
Page 2 of 6
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RoHS
RoHS
N-HFA15PB60
SEMICONDUCTOR
Nell High Power Products
Fig.1 Maximum forward voltage drop vs.
Instantaneous forward current
Fig.2 Typical reverse current vs. reverse voltage
10000
100
10
T
= 150 °С
J
1000
100
10
T
= 125 °C
J
1
T
= 25 ºC
J
T
T
T
= 150 °С
= 125 °С
= 25 °С
J
J
J
0.1
0.01
1
1.0
0
100
200
300
400
500
600
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Forward voltage drop (V), VFM
Reverse voltage (V), VR
Fig.3 Typical junction capacitance vs. reverse voltage
100
T
= 25 °С
J
10
10
100
1000
Reverse voltage (V), VR
Fig.4 Maximum thermal Impedance ZthJC characteristics
10
1
0.1
P
DM
t
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
2
Notes:
1. Duty factor D = t1/ t 2
Single pulse
(thermal response)
2. Peak T = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular pulse duration (sec), t1
Page 3 of 6
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RoHS
RoHS
N-HFA15PB60
SEMICONDUCTOR
Nell High Power Products
Fig.5 Typical reverse recovery time vs. dI /dt
Fig.6 Typical recovery current vs. dI /dt
F
F
100
80
25
20
15
I
I
I
= 30 A
= 15 A
= 5 A
V
T
= 200 V
= 125 °С
= 25 °С
F
F
F
R
J
J
T
60
40
20
I
I
I
= 30 A
= 15 A
= 5 A
F
F
F
10
5
0
V
T
= 200 V
= 125 °С
= 25 °С
R
J
J
T
0
100
1000
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig.8 Typical dI
/dt vs. dI /dt
(rec)M
Fig.7 Typical Stored Charge vs. dI /dtI
F
F
10000
800
600
400
V
T
= 200 V
= 125 °С
= 25 °С
R
I
I
I
= 30 A
J
J
F
T
= 15 A
F
= 5 A
F
I
= 30 A
= 15 A
= 5 A
F
F
F
I
I
1000
200
0
V
T
= 200 V
R
= 125 °С
= 25 °С
J
J
T
100
1000
100
1000
100
dI /dt (A/µs)
F
dIF/dt (A/µs)
Fig.9 Reverse recovery parameter test circuit
VR = 200 V
Ω
0.01
L = 70 µH
D.U.T.
D
dI /dt
F
adjust
IRFP250
G
S
Page 4 of 6
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RoHS
N-HFA15PB60
SEMICONDUCTOR
Nell High Power Products
Fig.10 Reverse recovery waveform and definitions
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 I
RRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
x l
2
trr
RRM
(2) IRRM - peak reverse recovery current
Q
rr
=
(3) trr - reverse recovery time measured
/dt - peak rate of change of
(5) dI(rec)M
current during tb portion of trr
from zero crossing point of negative
going I to point where a line passing
F
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
ORDERING INFORMATION TABLE
Device code
-
HFA 15 PB
N
60
1
2
3
4
5
-
-
-
-
-
Nell Semiconductors product
FRED family
1
2
3
4
Current rating (15 =15A)
PB = TO-247AC modified
Voltage rating: (60 = 600 V)
5
Page 5 of 6
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RoHS
RoHS
N-HFA15PB60
SEMICONDUCTOR
Nell High Power Products
Outine Table
N-HFA15PB60
Page 6 of 6
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