GAN039-650NBB [NEXPERIA]

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 packageDevelopment;


型号：	GAN039-650NBB
厂家：	Nexperia
描述：	650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 packageDevelopment
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GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212

package

19 April 2021

Objective data sheet

1. General description

The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It

is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology

and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

2. Features and benefits

•

Simplified driver design as standard level MOSFET gate drivers can be used:

•

0 V to 12 V drive voltage

Gate threshold voltage V_GSthof 4 V

•

Robust gate oxide with ±20 V V_GSrating

High gate threshold voltage of 4 V for gate bounce immunity

Low body diode V_ffor reduced losses and simplified dead-time adjustments

Transient over-voltage capability for increased robustness

CCPAK package technology:

•

Improved reliability, with reduced R_th(j-mb)for optimal cooling

Lower inductances for lower switching losses and EMI

175 °C maximum junction temperature

High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike

traditional QFN packages

•

Visual (AOI) soldering inspection, no need for expensive x-ray equipment

Easy solder wetting for good mechanical solder joints

3. Applications

•

Hard and soft switching converters for industrial and datacom power

Bridgeless totempole PFC

PV and UPS inverters

Servo motor drives

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

650

Unit

drain-source voltage

drain current

-55 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

300

175

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 32 A; T_j= 25 °C

mΩ

Nexperia

GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

I_D= 32 A; V_DS= 400 V; V_GS= 10 V;

T_j= 25 °C

Q_G(tot)

Source-drain diode

Q_r

recovered charge

I_S= 32 A; dI_S/dt = -1000 A/µs;

V_GS= 0 V; V_DS= 400 V; Fig. 3

150

5. Pinning information

Table 2. Pinning information

Symbol

Description

gate

Simplified outline

Graphic symbol

source

drain

12 11 10

CCPAK (SOT8000)

aaa-028116

drain

mounting base; connected

to source

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Plastic, surface mounted copper clip package

Version

GAN039-650NBB

CCPAK

SOT8000

(CCPAK1212); 13 terminals; 2.0 mm pitch, 12 mm x 12

mm x 2.5 mm body

7. Marking

Table 4. Marking codes

Type number

Marking code

039INBBX

GAN039-650NBB

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Objective data sheet

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Nexperia

GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

650

Unit

drain-source voltage

-55 °C ≤ T_j≤ 175 °C

V_TDS

transient drain to source pulsed; t_p= 1 µs; δ_factor= 0.01

voltage

[tbd]

V_GS

P_tot

I_D

gate-source voltage

-20

total power dissipation

drain current

T_mb= 25 °C; Fig. 1

300

V_GS= 10 V; T_mb= 25 °C

V_GS= 10 V; T_mb= 100 °C

pulsed; t_p≤ 10 µs; T_mb= 25 °C

I_DM

peak drain current

storage temperature

junction temperature

240

175

260

T_stg

T_j

-55

°C

T_sld(M)

peak soldering

temperature

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C; V_GS= 0 V

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

240

03aa16

120

der

(%)

100

150

200

(°C)

Fig. 1. Normalized total power dissipation as a function of mounting base temperature

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

0.5

Unit

R_th(j-mb)

thermal resistance from

junction to mounting

base

K/W

GAN039-650NBB

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Nexperia

GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_GS(th)

I_DSS

gate-source threshold I_D= 1 mA; V_DS=V_GS; T_j= 25 °C

voltage

3.3

4.8

drain leakage current

V_DS= 650 V; V_GS= 0 V; T_j= 25 °C

V_DS= 650 V; V_GS= 0 V; T_j= 150 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= 10 V; I_D= 32 A; T_j= 25 °C

µA

I_GSS

gate leakage current

400

R_DSon

drain-source on-state

resistance

mΩ

V_GS= 10 V; I_D= 32 A; T_j= 175 °C;

Fig. 2

R_G

gate resistance

f = 1 MHz; Fig 4

0.2

0.5

1.25

Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

I_D= 32 A; V_DS= 400 V; V_GS= 10 V;

T_j= 25 °C

gate-source charge

gate-drain charge

input capacitance

output capacitance

V_DS= 400 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C

1500

147

C_oss

C_rss

reverse transfer

capacitance

C_o(er)

effective output

capacitance, energy

0 V ≤ V_DS≤ 400 V; V_GS= 0 V;

f = 1 MHz; T_j= 25 °C

220

380

C_o(tr)

effective output

capacitance, time

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 400 V; R_L= 12.5 Ω; V_GS= 12 V;

R_G(ext)= 30 Ω

[tbd]

150

turn-off delay time

fall time

Q_oss

output charge

V_GS= 0 V; V_DS= 400 V

Source-drain diode

V_SD

source-drain voltage

I_S= 32 A; V_GS= 0 V; T_j= 25 °C

I_S= 16 A; V_GS= 0 V; T_j= 25 °C

1.8

2.5

1.3

t_rr

reverse recovery time I_S= 32 A; dI_S/dt = -1000 A/µs;

[tbd]

150

V_GS= 0 V; V_DS= 400 V; Fig. 3

Q_r

recovered charge

GAN039-650NBB

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Nexperia

GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

aaa-027810

2.5

1.5

0.5

-60 -30

90 120 150 180

T (°C)

Fig. 2. Normalized drain-source on-state resistance factor as a function of junction temperature

I, V

dl /dt

0.25 I

RRM

DUT

aaa-029277

Fig. 3. Diode reverse recovery test circuit and waveform

11. Application information

A Ferrite bead must be fitted in series with the gate of the GaN FET and should be located as

close as possible to the gate pin, (see figure below). Keeping the gate-source loop as compact as

possible minimizes the gate loop inductance. The Ferrite bead damps the resonant circuit made

up of the gate source loop inductance and the GaN FET input capacitance, thus providing fast

switching stability. It is recommended that the impedance of the ferrite bead should be 30 Ω @

100 MHz, (recommended p/n BLM18PG300SN1D). A series resistance (R_G) of 10 - 15 Ω is also

recommended.

GAN039-650NBB

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Nexperia

GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

DC bus

BUS

driver

DCL

FB1

(place as close as

possible to drain pin)

aaa-030816

Fig. 4. Ferrite bead and RC snubber

A DC-link snubber is recommended in all cases. Optimal is 20 nF in series with 4 Ω, most easily

achieved with parallel combination 10 nF and 8 Ω. This snubber lowers the Q factor of any

resonance in the bus. That resonance will act as a load on the high gain amplifier that is the GaN

FET and can lead to instability.

GAN039-650NBB

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Objective data sheet

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Nexperia

GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

12. Package outline

Plastic, surface mounted copper clip package (CCPAK1212);

13 terminals; 2.0 mm pitch, 12 mm x 12 mm x 2.5 mm body

SOT8000

Gauge plane

Seating plane

detail X

(View rotated 90° CCW)

C A-B D

Exposed

thermal

pad area

10 mm

scale

Dimensions (mm are the original dimensions)

Unit

12.2

9.6

12.3 1.0

(3.6) 2.0 12.0

11.7 0.6

max 2.8 0.15 2.65

nom

1.15 0.30

11.1

5.7

8°

0°

0.25

1.3 0.25 0.1

min 2.4

2.35

0.9 0.24 11.8 10.5

9.2 5.15

Note

1. Plastic or metal protrusions of 0.2 mm max per side are not included.

sot8000_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

20-09-16

20-09-30

SOT8000

Fig. 5. Package outline CCPAK (SOT8000)

GAN039-650NBB

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Nexperia

GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

13. Soldering

Footprint information for reflow soldering of CCPAK1212 package

SOT8000

12.5

11.8

1.4

1.3

1.2

0.6

0.7

1.8 1.7

1.6

0.97

2.35 (6x)

5.6 5.5 0.4

9.9 13.5

0.2

3.13

3.2 (6x)

0.4

0.2

10.8

10.9

recommended stencil thickness: 0.15 mm

occupied area

solder resist

solder paste

solder land

Dimensions in mm

20-03-16

Issue date

sot8000_fr

Fig. 6. Reflow soldering footprint for CCPAK (SOT8000)

GAN039-650NBB

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Nexperia

GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

14. Legal information

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Data sheet status

Document status Product

Definition

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

[1][2]

status [3]

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

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for the planned application and use of customer’s third party customer(s).

Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

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or problem which is based on any weakness or default in the customer’s

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the internet at https://www.nexperia.com.

Definitions

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

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GAN039-650NBB

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Nexperia

GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 3

10. Characteristics............................................................4

11. Application information..............................................5

12. Package outline.......................................................... 7

13. Soldering..................................................................... 8

14. Legal information........................................................9

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 19 April 2021

GAN039-650NBB

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GAN039-650NBB [NEXPERIA]

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