PBSS8110Y [NEXPERIA]
100 V, 1 A NPN low VCEsat (BISS) transistorProduction;
| 型号： | PBSS8110Y |
| 厂家： | 
Nexperia |
| 描述： | 100 V, 1 A NPN low VCEsat (BISS) transistorProduction 开关 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
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Kind regards,
Team Nexperia
PBSS8110Y
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 21 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat transistor in a SOT363 (SC-88) plastic package.
1.2 Features
SOT363 package
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency reduces heat generation
1.3 Applications
Major application segments:
Automotive 42 V power
Telecom infrastructure
Industrial
Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
DC-to-DC converter
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
1
Unit
V
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
-
-
-
-
-
-
-
-
A
ICM
3
A
RCEsat
200
mΩ
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Discrete pinning
Pin
Description
collector
base
Simplified outline
Symbol
1, 2, 5, 6
1, 2, 5, 6
6
5
4
3
4
emitter
3
4
1
2
3
sym014
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
SOT363
PBSS8110Y
-
plastic surface mounted package; 6 leads
4. Marking
Table 4.
Marking
Type number
Marking code[1]
PPBSS8110Y
81*
[1] * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
ICM
Parameter
Conditions
open emitter
open base
open collector
Tj(max)
Min
Max
120
100
5
Unit
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
continuous collector current
continuous base current
total power dissipation
-
-
-
-
-
-
-
-
-
V
V
V
3
A
IC
1
A
IB
0.3
290
480
625
A
[1]
[2]
[3]
Ptot
Tamb ≤ 25 °C
mW
mW
mW
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
2 of 13
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Tj
Parameter
Conditions
Min
-
Max
150
Unit
°C
junction temperature
Tamb
operating ambient
temperature
−65
+150
°C
Tstg
storage temperature
+150
°C
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm2 collector mounting
pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm2 collector mounting
pad.
001aaa796
600
P
tot
(mW)
(1)
(2)
400
200
0
0
40
80
120
160
(°C)
T
amb
(1) 1cm2 collector mounting pad
(2) Standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Parameter
Symbol
Conditions
Typ
431
260
200
85
Unit
K/W
K/W
K/W
K/W
[1]
[2]
[3]
[1]
Rth(j-a)
thermal resistance from junction
to ambient
in free air
Rth(j-s)
thermal resistance from junction
to soldering point
in free air
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm2 collector mounting
pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm2 collector mounting
pad.
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
3 of 13
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa798
3
10
(1)
Z
th
(2)
(3)
(K/W)
2
(4)
(5)
10
(6)
(7)
10
(8)
(9)
(10)
1
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
Mounted on FR4 PCB; standard footprint
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 2. Transient thermal impedance as a function of pulse time; typical values
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
4 of 13
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa797
3
10
Z
th
(1)
(K/W)
(2)
(3)
2
10
(4)
(5)
(6)
(7)
10
(8)
(9)
1
(10)
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
Mounted on FR4 PCB; mounting pad for collector = 1cm2
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 3. Transient thermal impedance as a function of pulse time; typical values
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off VCB = 80 V; IE = 0 A
current
-
-
-
-
VCB = 80 V; IE = 0 A;
μA
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter
cut-off current
VCE = 80 V; VBE = 0 V
VEB = 4 V; IC = 0 A
-
-
-
-
100
100
nA
nA
emitter-base cut-off
current
DC current gain
VCE = 10 V; IC = 1 mA
VCE = 10 V; IC = 250 mA
VCE = 10 V; IC = 0.5 A
VCE = 10 V; IC = 1 A
150
150
100
80
-
-
-
-
-
500
[1]
[1]
-
-
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
5 of 13
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
Table 7.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
40
Unit
mV
mV
mV
mΩ
VCEsat
collector-emitter
saturation voltage
IC = 100 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 1 A; IB = 100 mA
-
-
-
-
-
-
120
200
200
-
[1]
RCEsat
VBEsat
VBEon
fT
equivalent
on-resistance
160
base-emitter
saturation voltage
IC = 1 A; IB = 100 mA
-
-
-
-
-
1.05
0.9
-
V
base-emitter turn-on VCE = 10 V; IC = 1 A
voltage
-
V
transition frequency
VCE = 10 V; IC = 50 mA;
f = 100 MHz
100
-
MHz
pF
Cc
collector capacitance VCB = 10 V; IE = Ie = 0 A;
f = 1 MHz
7.5
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
001aaa497
001aaa495
600
1000
V
BE
(mV)
h
FE
(1)
(2)
(3)
800
(1)
(2)
400
600
400
200
200
(3)
0
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
I
I
C
VCE = 10 V
VCE = 10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. DC current gain as a function of collector
current; typical values
Fig 5. Base-emitter voltage as a function of collector
current; typical values
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
6 of 13
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa504
001aaa505
3
1
10
V
V
CEsat
(mV)
CEsat
(V)
−1
2
10
10
(1)
(2)
(3)
−2
10
10
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 10
IC/IB = 20; Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
001aaa506
001aaa498
4
10
1200
V
BEsat
(mV)
V
CEsat
(mV)
1000
3
2
(1)
10
800
600
400
200
(2)
(3)
10
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 50; Tamb = 25 °C
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
7 of 13
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa499
001aaa500
1200
1000
BEsat
V
BEsat
(mV)
V
(mV)
1000
800
800
600
400
600
400
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20; Tamb = 25 °C
IC/IB = 50; Tamb = 25 °C
Fig 10. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 11. Base-emitter saturation voltage as a function
of collector current; typical values
001aaa496
001aaa501
3
2
10
I
(mA) = 35
I
B
C
R
CEsat
(Ω)
(A)
31.5
28
24.5
21
1.6
2
10
17.5
14
1.2
0.8
0.4
0
10.5
7
10
3.5
1
(1)
(2)
(3)
−1
10
10
−1
2
3
4
0
1
2
3
4
5
1
10
10
10
10
I (mA)
C
V
CE
(V)
Tamb = 25 °C
IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 12. Collector current as a function of
collector-emitter voltage; typical values
Fig 13. Equivalent on-resistance as a function of
collector current; typical values
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
8 of 13
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
001aaa502
001aaa503
3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
10
10
1
1
−1
10
−1
10
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20; Tamb = 25 °C
IC/IB = 50; Tamb = 25 °C
Fig 14. Equivalent on-resistance as a function of
collector current; typical values
Fig 15. Equivalent on-resistance as a function of
collector current; typical values
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
9 of 13
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
8. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
p
w
M B
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
Fig 16. Package outline
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
10 of 13
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
9. Revision history
Table 8.
Revision history
Document ID
PBSS8110Y_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20091121
Product data
-
PBSS8110Y_1
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Table 2 “Discrete pinning”: amended
• Figure 4 “DC current gain as a function of collector current; typical values”: updated
• Figure 6 “Collector-emitter saturation voltage as a function of collector current; typical
values”: VCEsat unit amended from mV to V
• Figure 12 “Collector current as a function of collector-emitter voltage; typical values”:
updated
• Figure 16 “Package outline”: updated
PBSS8110Y_1
20040602
Product data
-
-
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
11 of 13
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS8110Y_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 November 2009
12 of 13
PBSS8110Y
NXP Semiconductors
100 V, 1 A NPN low VCEsat (BISS) transistor
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
10.1
10.2
10.3
10.4
11
12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 November 2009
Document identifier: PBSS8110Y_2
相关型号：
PBSS8510PA
5200mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2 X 2 MM, 0.65 MM HEIGHT, ULTRA THIN, PLASTIC, LEADLESS, HUSON-3
NXP
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