PSMN0R9-30ULD [NEXPERIA]

N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595Production;


型号：	PSMN0R9-30ULD
厂家：	Nexperia
描述：	N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595Production
文件：	总13页 (文件大小：263K)
中文：	中文翻译
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PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET

in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

23 May 2018

Product data sheet

1. General description

SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic

level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3

portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking

performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode

but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency

applications at high switching frequencies.

2. Features and benefits

•

Improved creepage and clearance – meets the requirements of UL2595

300 A capability

•

Avalanche rated, 100% tested at I_AS= 190 A

Ultra low Q_G, Q_GDand Q_OSSfor high system efficiency, especially at higher switching

frequencies

•

Superfast switching with soft-recovery; s-factor > 1

Low spiking and ringing for low EMI designs

Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C

Optimised for 4.5 V gate drive

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,

qualified to 150 °C

•

Wave solderable; exposed leads for optimal visual solder inspection

3. Applications

•

Brushed and brushless motor control

Battery powered appliances where enhanced creepage and clearance is required to meet

UL2595

•

For non-UL2595 applications please use PSMN0R9-30YLD

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 150 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

300

227

150

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

Symbol

Static characteristics

R_DSondrain-source on-state

resistance

Parameter

Conditions

Min

Typ

Max

Unit

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

0.79

0.65

1.09

0.87

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

Dynamic characteristics

Q_GD

gate-drain charge

I_D= 25 A; V_DS= 15 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

13.5

109

Q_G(tot)

total gate charge

I_D= 25 A; V_DS= 15 V; V_GS= 10 V;

Fig. 12; Fig. 13

Source-drain diode

softness factor

I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 15 V; Fig. 16

0.9

[1] 300A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

5. Pinning information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

source

gate

mbb076

mounting base; connected to

drain

sot1023a_sv

LFPAK56-UL2595

(SOT1023A)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PSMN0R9-30ULD

LFPAK56-UL plastic, single-ended surface-mounted package (LFPAK56); 4

SOT1023A

2595

leads; 1.27 mm pitch

PSMN0R9-30ULD

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Product data sheet

23 May 2018

2 / 13

Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

7. Marking

Table 4. Marking codes

Type number

Marking code

PSMN0R9-30ULD

0D93UL

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

drain-gate voltage

gate-source voltage

total power dissipation

drain current

25 °C ≤ T_j≤ 150 °C

25 °C ≤ T_j≤ 150 °C; R_GS= 20 kΩ

V_DGR

V_GS

-20

P_tot

T_mb= 25 °C; Fig. 1

227

300

284

1592

150

260

I_D

V_GS= 10 V; T_mb= 25 °C; Fig. 2

V_GS= 10 V; T_mb= 100 °C; Fig. 2

pulsed; t_p≤ 10 µs; T_mb= 25 °C; Fig. 3

[1]

I_DM

peak drain current

storage temperature

junction temperature

T_stg

T_j

-55

°C

T_sld(M)

peak soldering

temperature

V_ESD

electrostatic discharge

voltage

HBM

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

242

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

1800

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

I_D= 25 A; V_sup≤ 30 V; R_GS= 50 Ω;

V_GS= 10 V; T_j(init)= 25 °C; unclamped;

t_p= 6.1 ms

[2]

2575

190

source avalanche

energy

I_AS

non-repetitive avalanche V_sup≤ 30 V; V_GS= 10 V; T_j(init)= 25 °C;

current R_GS= 50 Ω

[1] 300A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,

thermal design and operating temperature.

[2] Protected by 100% test

PSMN0R9-30ULD

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Product data sheet

23 May 2018

3 / 13

Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

aaa-020460

03ne36

500

400

300

200

100

120

(A)

P_der

(%)

(1)

100

150

200

75 100 125 150 175 200

(°C)

T_mb( C)

(1) 300A continuous current has been successfully

demonstrated during application tests. Practically

the current will be limited by PCB, thermal design

and operating temperature

Fig. 1. Normalized total power dissipation as a

function of mounting base temperature

Fig. 2. Continuous drain current as a function of

mounting base temperature

aaa-027871

(A)

Limit R

= V / I

DSon

= 10 µs

100 µs

1 ms

10 ms

100 ms

-1

(V)

T_mb= 25 °C; I_DMis a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PSMN0R9-30ULD

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Product data sheet

23 May 2018

4 / 13

Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance

from junction to

mounting base

Fig. 4

0.45

0.55

K/W

R_th(j-a)

thermal resistance

from junction to

ambient

Fig. 5

Fig. 6

K/W

125

aaa-027870

th(j-mb)

(K/W)

δ = 0.5

0.2

-1

-2

-3

0.1

0.05

0.02

single shot

δ =

-6

-5

-4

-3

-2

-1

(s)

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

aaa-005750

aaa-005751

Fig. 5. PCB layout for thermal resistance junction to

ambient 1” square pad; FR4 Board; 2oz copper

Fig. 6. PCB layout for thermal resistance junction to

ambient minimum footprint;FR4 board; 2oz

copper

PSMN0R9-30ULD

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Product data sheet

23 May 2018

5 / 13

Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

1.2

V_GS(th)

gate-source threshold I_D= 1 mA; V_DS=V_GS; T_j= 25 °C

voltage

1.5

2.2

ΔV_GS(th)/ΔT

gate-source threshold 25 °C ≤ T_j≤ 150 °C

voltage variation with

-4.5

mV/K

temperature

I_DSS

drain leakage current

gate leakage current

V_DS= 24 V; V_GS= 0 V; T_j= 25 °C

V_DS= 24 V; V_GS= 0 V; T_j= 125 °C

V_GS= 16 V; V_DS= 0 V; T_j= 25 °C

V_GS= -16 V; V_DS= 0 V; T_j= 25 °C

µA

mΩ

3.7

I_GSS

100

1.09

R_DSon

drain-source on-state

resistance

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

0.79

V_GS= 4.5 V; I_D= 25 A; T_j= 150 °C;

Fig. 10; Fig. 11

1.8

0.87

1.44

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 10

0.65

V_GS= 10 V; I_D= 25 A; T_j= 150 °C;

Fig. 10; Fig. 11

R_G

gate resistance

f = 1 MHz

1.4

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 25 A; V_DS= 15 V; V_GS= 10 V;

Fig. 12; Fig. 13

109

I_D= 25 A; V_DS= 15 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

I_D= 0 A; V_DS= 0 V; V_GS= 0 V

Q_GS

gate-source charge

I_D= 25 A; V_DS= 15 V; V_GS= 4.5 V;

Fig. 12; Fig. 13

15.3

10.5

Q_GS(th)

pre-threshold gate-

source charge

Q_GS(th-pl)

post-threshold gate-

source charge

4.8

Q_GD

gate-drain charge

13.5

2.4

V_GS(pl)

gate-source plateau

voltage

I_D= 25 A; V_DS= 15 V; Fig. 12; Fig. 13

C_iss

C_oss

C_rss

input capacitance

output capacitance

V_DS= 15 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; Fig. 14

7668

2914

445

reverse transfer

capacitance

PSMN0R9-30ULD

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Product data sheet

23 May 2018

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Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

Symbol

t_d(on)

t_r

Parameter

Conditions

Min

Typ

38.1

49.8

Max

Unit

turn-on delay time

rise time

V_DS= 15 V; R_L= 0.6 Ω; V_GS= 4.5 V;

R_G(ext)= 5 Ω

t_d(off)

t_f

turn-off delay time

fall time

42.6

83.11

Q_oss

output charge

V_GS= 0 V; V_DS= 15 V; f = 1 MHz;

T_j= 25 °C

Source-drain diode

V_SD

t_rr

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C; Fig. 15

0.76

1.2

reverse recovery time I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 15 V; Fig. 16

Q_r

t_a

recovered charge

[1]

reverse recovery rise

time

27.4

t_b

reverse recovery fall

time

24.7

0.9

softness factor

[1] includes capacitive recovery

aaa-011698

aaa-011700

180

DSon

(mΩ)

10 V

= 3 V

2.8 V

(A)

135

2.6 V

2.4 V

2.2 V

0.5

1.5

2.5

(V)

Fig. 7. Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig. 8. Drain-source on-state resistance as a function

of gate-source voltage; typical values

PSMN0R9-30ULD

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Product data sheet

23 May 2018

7 / 13

Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

aaa-011701

aaa-011702

200

160

120

(mΩ)

DSon

(A)

2.4 V

2.6 V

2.8 V

3 V

150°C

T = 25°C

4.5 V

= 10 V

0.5

1.5

2.5

(V)

3.5

75 100 125 150 175 200

(A)

Fig. 9. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

Fig. 10. Drain-source on-state resistance as a function

of drain current; typical values

003aal037

10 V

1.6

GS(pl)

1.2

GS(th)

= 4.5 V

0.8

0.4

GS2

GS1

G(tot)

003aaa508

Fig. 12. Gate charge waveform definitions

-60 -30

90 120 150 180

T (°C)

Fig. 11. Normalized drain-source on-state resistance

factor as a function of junction temperature

PSMN0R9-30ULD

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Product data sheet

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Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

aaa-011703

aaa-011705

(V)

(pF)

iss

24 V

oss

15 V

= 6 V

rss

-1

100

(nC)

120

(V)

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig. 13. Gate-source voltage as a function of gate

charge; typical values

003aal160

aaa-011706

(A)

0.25 I

150°C

T = 25°C

-1

t (s)

0.2

0.4

0.6

0.8

(V)

1.2

Fig. 16. Reverse recovery timing definition

Fig. 15. Source current as a function of source-drain

voltage; typical values

PSMN0R9-30ULD

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Product data sheet

23 May 2018

9 / 13

Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

11. Package outline

Plastic single-ended surface-mounted package (LFPAK56); 4 leads

SOT1023A

(3x)

mounting

base

L (4x)

(4x)

(3x)

detail X

2.5

5 mm

scale

Dimensions

Unit

(1)

max 1.10 0.15

nom

min 0.95 0.00

0.50 4.41

0.35 3.62

0.25 0.30 4.70 3.8 5.30 3.7

0.19 0.24 4.45 3.6 4.95 3.5

6.2 1.3 0.85

5.9 0.8 0.40

0.25

0.85

1.27

0.25 0.1

Note

1. Plastic or metal protrusions of 0.15 mm per side are not included.

sot1023a_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

- - -

JEITA

17-05-29

17-06-02

SOT1023A

Fig. 17. Package outline LFPAK56-UL2595 (SOT1023A)

PSMN0R9-30ULD

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Product data sheet

23 May 2018

10 / 13

Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

Suitability for use — Nexperia products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction

12. Legal information

of an Nexperia product can reasonably be expected to result in personal

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

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Data sheet status

Document status Product

Definition

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

[1][2]

status [3]

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

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Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

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the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Characteristics sections of this document is not warranted. Constant or

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publication hereof.

PSMN0R9-30ULD

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Product data sheet

23 May 2018

11 / 13

Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

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Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

PSMN0R9-30ULD

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Product data sheet

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Nexperia

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................3

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 5

10. Characteristics............................................................6

11. Package outline........................................................ 10

12. Legal information.......................................................11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 23 May 2018

PSMN0R9-30ULD

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Product data sheet

23 May 2018

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PSMN0R9-30ULD [NEXPERIA]

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