PSMN7R0-30YLC [NEXPERIA]

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technologyProduction;


型号：	PSMN7R0-30YLC
厂家：	Nexperia
描述：	N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technologyProduction 开关脉冲晶体管
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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

Table 1.

Quick reference data …continued

Symbol Parameter

Conditions

Min Typ Max Unit

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 4.5 V; I_D= 20 A;

V_DS= 15 V; see Figure 14;

see Figure 15

2.5

7.9

Q_G(tot)

total gate charge

V_GS= 4.5 V; I_D= 20 A;

V_DS= 15 V; see Figure 14;

see Figure 15

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

source

gate

mbb076

mounting base; connected to drain

2 3 4

SOT669 (LFPAK;

Power-SO8)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

plastic single-ended surface-mounted package; 4 leads

Version

PSMN7R0-30YLC

LFPAK; Power-SO8

SOT669

PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_DGR

V_GS

25 °C ≤ T_j≤ 175 °C; R_GS= 20 kΩ

-20

I_D

V_GS= 10 V; T_mb= 25 °C; see Figure 1

V_GS= 10 V; T_mb= 100 °C; see Figure 1

I_DM

peak drain current

pulsed; t_p≤ 10 µs; T_mb= 25 °C;

245

see Figure 4

P_tot

total power dissipation

storage temperature

T_mb= 25 °C; see Figure 2

°C

T_stg

T_j

-55

175

260

junction temperature

T_sld(M)

V_ESD

peak soldering temperature

electrostatic discharge voltage

MM (JEDEC JESD22-A115)

190

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

245

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C; I_D= 61 A;

V_sup≤ 30 V; R_GS= 50 Ω; unclamped;

see Figure 3

003aag120

03na19

120

I_D

(A)

der

(%)

100

150

200

100

150

T_mb( C)

200



(°C)

Fig 1. Continuous drain current as a function of

mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

PSMN7R0-30YLC

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Product data sheet

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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

003aag121

10²

(A)

(1)

(2)

10^-3

10^-2

10^-1

(ms)

Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time

003aag122

10³

I_D

(A)

Limit R_DSon= V_DS/ I_D

10²

t =10



100



1 ms

10 ms

100 ms

10^-1

10²

V_DS(V)

Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PSMN7R0-30YLC

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Product data sheet

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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction to mounting base

see Figure 5

2.9

3.13

K/W

003aag123

Z_th(j-mb)

(K/W)



= 0.5

0.2

0.1

0.05

 =

10^-1

0.02

single shot

10^-2

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

t_p(s)

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN7R0-30YLC

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Product data sheet

Rev. 2 — 1 September 2011

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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSSdrain-source breakdown

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

voltage

V_GS(th)

gate-source threshold

voltage

I_D= 1 mA; V_DS= V_GS; T_j= 25 °C;

see Figure 10

1.05

1.58

1.95

I_D= 10 mA; V_DS= V_GS; T_j= 150 °C;

see Figure 11

0.5

I_D= 1 mA; V_DS= V_GS; T_j= -55 °C;

see Figure 11

2.35

I_DSS

drain leakage current

gate leakage current

V_DS= 30 V; V_GS= 0 V; T_j= 25 °C

V_DS= 30 V; V_GS= 0 V; T_j= 150 °C

V_GS= 16 V; V_DS= 0 V; T_j= 25 °C

V_GS= -16 V; V_DS= 0 V; T_j= 25 °C

µA

mΩ

100

8.9

I_GSS

R_DSon

drain-source on-state

resistance

V_GS= 4.5 V; I_D= 20 A; T_j= 25 °C;

see Figure 12

7.6

V_GS= 4.5 V; I_D= 20 A; T_j= 150 °C;

see Figure 12; see Figure 13

14.7

7.1

mΩ

Ω

V_GS= 10 V; I_D= 20 A; T_j= 25 °C;

see Figure 12

V_GS= 10 V; I_D= 20 A; T_j= 150 °C;

see Figure 12; see Figure 13

11.8

4.4

R_G

gate resistance

f = 1 MHz

2.2

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 20 A; V_DS= 15 V; V_GS= 10 V;

see Figure 14; see Figure 15

7.9

I_D= 20 A; V_DS= 15 V; V_GS= 4.5 V;

see Figure 14; see Figure 15

I_D= 0 A; V_DS= 0 V; V_GS= 10 V;

see Figure 15

Q_GS

gate-source charge

I_D= 20 A; V_DS= 15 V; V_GS= 4.5 V;

see Figure 14; see Figure 15

2.7

1.7

Q_GS(th)

pre-threshold gate-source

charge

Q_GS(th-pl)

post-threshold gate-source

charge

Q_GD

gate-drain charge

2.5

V_GS(pl)

gate-source plateau voltage I_D= 20 A; V_DS= 15 V; see Figure 14;

see Figure 15

2.77

C_iss

C_oss

C_rss

input capacitance

V_DS= 15 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; see Figure 16

1057

235

output capacitance

reverse transfer capacitance

PSMN7R0-30YLC

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Product data sheet

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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

Table 6.

Symbol

t_d(on)

t_r

Characteristics …continued

Parameter

Conditions

Min

Typ

Max

Unit

turn-on delay time

rise time

V_DS= 15 V; R_L= 0.75 Ω; V_GS= 4.5 V;

R_G(ext)= 4.7 Ω

t_d(off)

t_f

turn-off delay time

fall time

7.5

6.4

Q_oss

output charge

V_GS= 0 V; V_DS= 15 V; f = 1 MHz;

T_j= 25 °C

Source-drain diode

V_SD

source-drain voltage

I_S= 20 A; V_GS= 0 V; T_j= 25 °C;

see Figure 17

0.86

1.1

t_rr

Q_r

t_a

reverse recovery time

recovered charge

I_S= 20 A; dI_S/dt = -100 A/µs;

V_GS= 0 V; V_DS= 15 V

reverse recovery rise time

reverse recovery fall time

V_GS= 0 V; I_S= 20 A;

dI_S/dt = -100 A/µs; V_DS= 15 V;

see Figure 18

t_b

003aag125

003aag124

R_DSon

10 4.5

I_D

3.5

)



(A)

3.0

2.8

2.6

2.4

2.2

V_GS(V) =

V_GS(V)

_DS(V)

Fig 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

Fig 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

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Product data sheet

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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

003aag126

003aag127

100

g_fs

(S)

I_D

(A)

T = 150 C

T = 25 C



_GS(V)

_D(A)

Fig 8. Forward transconductance as a function of

drain current; typical values

Fig 9. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aag128

003aag129

10^-1

I_D

V_GS(th)

(A)

(V)

10^-2

Ma x (1 mA)

I_D= 5mA

Min

Typ Ma x

1mA

10^-3

10^-4

10^-5

10^-6

Min (5 mA)

-60

120

180

V_GS(V)

T_j(C)

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Gate-source threshold voltage as a function of

junction temperature

PSMN7R0-30YLC

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Product data sheet

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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

003aag130

003aag131

R_DSon

(m)

3.0

2.8

4.5V

1.5

V_GS=10V

V_GS(V) =

3.5

4.5

0.5

-60

120

180

_D(A)

T_j(C)

Fig 12. Drain-source on-state resistance as a function

of drain current; typical values

Fig 13. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aag132

V_GS

(V)

GS(pl)

24V

15V

V_DS= 6V

GS(th)

GS1

GS2

G(tot)

003aaa508

_G(nC)

Fig 14. Gate charge waveform definitions

Fig 15. Gate-source voltage as a function of gate

charge; typical values

PSMN7R0-30YLC

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Product data sheet

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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

003aag133

003aag134

10⁴

I_S

(A)

(pF)

10³

10²

C_{is s}

C_oss

C_{rs s}

T = 150 C

T = 25 C



10^-1

10²

0.3

0.6

0.9

1.2

V_DS(V)

V_SD(V)

Fig 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig 17. Source current as a function of source-drain

voltage; typical values

003aaf 444

I_D

(A)

t_rr

t_a

t_b

0.25 I

I_RM

t (s)

Fig 18. Reverse recovery timing definition

PSMN7R0-30YLC

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Product data sheet

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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

7. Package outline

Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads

SOT669

mounting

base

1/2 e

(A )

detail X

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

max

1.20 0.15 1.10

1.01 0.00 0.95

0.50 4.41 2.2 0.9 0.25 0.30 4.10

0.35 3.62 2.0 0.7 0.19 0.24 3.80

5.0 3.3

4.8 3.1

6.2 0.85 1.3 1.3

5.8 0.40 0.8 0.8

8°

0°

0.25

4.20

1.27

0.25 0.1

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

06-03-16

11-03-25

SOT669

MO-235

Fig 19. Package outline SOT669 (LFPAK; Power-SO8)

PSMN7R0-30YLC

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Product data sheet

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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

8. Revision history

Table 7.

Document ID

PSMN7R0-30YLC v.2 20110901

Revision history

Release date

Data sheet status

Change notice

Supersedes

Product data sheet

PSMN7R0-30YLC v.1

Modifications:

• Status changed from objective to product.

• Various changes to content.

PSMN7R0-30YLC v.1 20110711

Objective data sheet

PSMN7R0-30YLC

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Product data sheet

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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Nexperia.

9. Legal information

Right to make changes — Nexperia reserves the right to make changes

to information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

Data sheet status

Suitability for use — Nexperia products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction

of a Nexperia product can reasonably be expected to result in personal

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Document

status [1][2] status [3]

Product

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Product

[short] data

sheet

Production

This document contains the product

specification.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

[1] Please consult the most recently issued document before initiating or

completing a design.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

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and fit for the customer’s applications and products planned, as well as

for the planned application and use of customer’s third party customer(s).

Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

Definitions

Nexperia does not accept any liability related to any default, damage, costs

or problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

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Nexperia does not give any representations or warranties as to the accuracy

or completeness of information included herein and shall have no liability for

the consequences of use of such information.

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internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the relevant

full data sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

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sold subject to the general terms and conditions of commercial sale, as

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In the event that customer uses the product for design-in and use in

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customer (a) shall use the product without Nexperia’s warranty of the product

for such automotive applications, use and specifications, and (b) whenever

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards customer

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PSMN7R0-30YLC

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

customer uses the product for automotive applications beyond Nexperia’

specifications such use shall be solely at customer’s own risk, and (c)

customer fully indemnifies Nexperia for any liability, damages or failed

product claims resulting from customer design and use of the product for

automotive applications beyond Nexperia’s standard warranty and Nexperia’

product specifications.

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between the translated and English versions.

Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

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N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology

11. Contents

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

Thermal characteristics . . . . . . . . . . . . . . . . . . .5

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12

Legal information. . . . . . . . . . . . . . . . . . . . . . . .13

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14

9.1

9.2

9.3

9.4

Contact information. . . . . . . . . . . . . . . . . . . . . .14

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 01 September 2011

PSMN7R0-30YLC [NEXPERIA]

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