NTE230 [NTE]
Silicon Controlled Rectifier (SCR) TV Deflection Circuit; 可控硅整流器（ SCR）电视机偏转电路
| 型号： | NTE230 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Controlled Rectifier (SCR) TV Deflection Circuit |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE230
Silicon Controlled Rectifier (SCR)
TV Deflection Circuit
Features:
D CTV 110° – CRT Horizontal Deflection
D Tracer Switch
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Non–Repetitive Peak Forward Voltage (TJ = +100°C), VDSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
RMS On–State Current (Note 1), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Average On–State Current (Note 1), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A
Surge Current (Note 1), ITSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Critical Rate–of–Rise of On–State Current, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/µs
Peak Gate Power Dissipation (Note 2), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Minimum Peak Reverse Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4°C/W
Note 1. Single Phase, Half Sine Wave at 50Hz, TC = +60°C
Note 2. 10µs duration
Electrical Characteristics:
Parameter
Symbol
IDRM
VTM
Test Conditions
VDRM = 750V, TJ = +100°C
ITM = 20A, TC = +25°C
TC = –40°C VD = 6V, RL = 10Ω
TC = +25°C
Min Typ Max Unit
Peak Off–State Current
Peak On–State Voltage
DC Gate Trigger Current
–
–
–
–
–
–
–
–
1.5
3.0
50
mA
V
IGT
mA
mA
30
Electrical Characteristics (Cont’d):
Parameter
DC Gate Non–Trigger Voltage
DC Gate Non–Trigger Current
Holding Current
Symbol
VGD
IGD
Test Conditions
VD = 750V, TC = +100°C
VD = 750V, TC = +100°C
VD = 6V, RL = 10Ω
Min Typ Max Unit
0.2
1.0
–
–
–
–
–
–
–
V
mA
IH
100 mA
Turn–Off Time
tq
ITM = 8A, di/dt = 20A/µs,
–
2.5
µs
VD = 610V, dv/dt = 700V/µs,
f = 15.7kHz, TC = +70°C, VG = 25V
Critical Exponential
dv/dt
VDRM = 500V, VG = –2.5V,
TC = +70°C, RG = 100Ω
700
–
–
V/µs
Rate–of–Rise of Forward
Blocking State Voltage
.295 (7.5)
.485 (12.3)
Dia
.062 (1.57)
.031 (0.78) Dia
.360
(9.14)
Min
.960 (24.3)
Gate
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Anode/Case
Cathode
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