NTE2362 [NTE]
Silicon Complementary Transistors High Speed Switch; 硅互补晶体管的高速开关
| 型号： | NTE2362 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors High Speed Switch |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2361 (NPN) & NTE2362 (PNP)
Silicon Complementary Transistors
High Speed Switch
Description:
The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for gener-
al–purpose amplifier and high speed switching applications. The high gain of these devices makes
it possible for them to be driven directly from integrated circuits.
Features:
D Very Small–Sized Package
D High Breakdown Voltage: VCEO = 50V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. For PNP device (NTE2362), voltage and current values are negative.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
Test Conditions
= 40Vdc, I = 0
Min Typ Max Unit
I
V
V
V
V
–
–
–
–
0.1
0.1
400
–
µA
µA
CBO
CB
BE
CE
CE
E
Emitter Cutoff Current
DC Current Gain
I
= 4Vdc
EBO
h
FE
= 5V, I = 10mA
200
–
–
C
Gain Bandwidth Product
f
T
= 10V,
I = 50mA
NTE2361
NTE2362
200
300
MHz
MHz
C
–
–
Electrical Characteristics (Cont’d): (TC = 25°C unless otherwise specified)
Parameter
Output Capacitance
Symbol
Test Conditions
Min Typ Max Unit
C
ob
V
CB
= 10Vdc,
f = 1MHz
NTE2361
NTE2362
NTE2361
NTE2362
–
–
5.6
3.7
–
–
pF
pF
V
Collector–Emitter Saturation Voltage
V
CE(sat)
I = 100mA,
I = 10mA
–
0.15 0.4
0.1 0.3
0.8 1.2
C
B
–
V
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Rise Time
V
BE(sat)
I = 100mA, I = 10mA
–
V
C
B
V
V
I = 10µA, I = 0
60
50
5
–
–
–
–
–
–
–
–
–
V
(BR)CBO
(BR)CEO
C
E
I = 100µA, R = ∞
V
C
BE
V
I = 10µA, I = ∞
–
V
(BR)EBO
E
C
V
CC
= 20V,
I = 100mA,
t
on
–
70
400
50
70
ns
ns
ns
ns
C
Storage Time
t
stg
–
I
B1
I
B2
= 10mA,
= 100mA
Fall Time
t
f
NTE2361
NTE2362
–
–
Note 1. For PNP device (NTE2362), voltage and current values are negative.
Note 2. Conditions apply to both except where noted.
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
E C B
.035 (0.9)
.050 (1.27)
.050 (1.27)
.102
(2.6)
Max
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