NTE236 [NTE]
Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB); 硅NPN晶体管最终RF输出功率（ PO = 16W ， 27MHz的， SSB ）
| 型号： | NTE236 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE236
Silicon NPN Transistor
Final RF Power Output
(PO = 16W, 27MHz, SSB)
Description:
The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF
band mobile radio applications.
Features:
D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
D Ability to Withstand Infinite VSWR Load when Operated at:
VCC = 16V, PO = 20W, f = 27MHz
Application:
D 10 to 14 Watt Output Power Class AB Amplifier Applications in HF band
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage (RBE = ∞), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Collector Dissipation, PC
TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7W
TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73.5°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Symbol
Test Conditions
I = 5mA, I = 0
Min Typ Max Unit
V
5
–
–
–
–
–
–
–
–
V
V
V
(BR)EBO
(BR)CBO
(BR)CEO
E
C
V
V
I = 1mA, I = 0
60
25
–
C
E
I = 10mA, R = ∞
C
BE
I
V
= 30V, I = 0
100 µA
100 µA
CBO
CB
EB
CE
CC
CC
E
Emitter Cutoff Current
I
V
V
V
V
= 4V, I = 0
–
EBO
C
DC Forward Current Gain
Output Power
h
FE
= 12V, I = 10mA, Note 1
10
16
60
50 180
–
C
P
= 12V, P = 1W, f = 27MHz
18
70
–
–
W
%
O
C
in
Collector Efficiency
h
= 12V, P = 1W, f = 27MHz
in
Note 1. Pulse Test: Pulse Width = 150µs, Duty Cycle = 5%.
.358 (9.1)
.051 (1.3)
.142 (3.62) Dia
C
.126 (3.2)
.485
(12.32)
.395
(9.05)
B
C
E
.189
(4.8)
.485
(12.32)
Min
.100 (2.54)
.019 (0.48)
.177 (4.5)
.347 (9.5)
.122 (3.1)
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