NTE2537 [NTE]
Silicon Complementary Transistors High Current Switch; 硅互补晶体管高电流开关
| 型号： | NTE2537 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors High Current Switch |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2536 (NPN) & NTE2537 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D High Current Capacity
D Wide ASO Range
D Low Saturation Voltage
Applications:
D Motor Drivers
D Relay Drivers
D Converters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 100V, IE = 0
Min Typ Max Unit
–
–
–
–
–
–
–
0.1
0.1
140
–
mA
mA
IEBO
VEB = 5V, IC = 0
VCE = 2V, IC = 4A
VCE = 2V, IC = 16A
hFE
50
20
–
Collector Emitter Saturation Volt-
age
VCE(sat) IC = 16A, IB = 1.6A
0.8
V
Base Emitter Saturation Voltage
VBE(sat) IC = 16A, IB = 1.6A
–
–
–
–
–
1.5
–
V
V
V
V
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
110
100
6
Collector Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞
–
Emitter Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
–
.190 (4.82)
.615 (15.62)
C
.787
(20.0)
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)
相关型号：
NTE253MCP
TRANSISTOR | BJT | PAIR | DARLINGTON | COMPLEMENTARY | 80V V(BR)CEO | 4A I(C) | TO-126
ETC
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