NTE2651 [NTE]
Silicon NPN Transistor Horizontal Deflection Output for Ultrahigh−Definition CRT Display; 硅NPN晶体管水平偏转输出超高清晰度CRT显示器
| 型号： | NTE2651 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor Horizontal Deflection Output for Ultrahigh−Definition CRT Display |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE2651
Silicon NPN Transistor
Horizontal Deflection Output for
Ultrahigh−Definition CRT Display
Features:
D High Speed
D High Breakdown Voltage
D High Reliability
Absolute Maximum Ratings: (TA + 25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Collector Dissipation, PC
TA + 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
TC + 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TA + 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
−
Typ Max Unit
Collector Cutoff Current
I
V
V
V
= 800V, I = 0
−
−
10
1.0
1.0
−
µA
mA
mA
V
CBO
CB
CE
EB
E
I
= 1500V, R = 0
−
CES
BE
Emitter Cutoff Current
I
= 4V, I = 0
−
−
EBO
C
Collector−Emitter Sustaining Voltage
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
DC Current Gain
V
I = 100mA, I = 0
800
−
−
CEO(sus)
C
B
V
CE(sat)
I = 8A, I = 2A
−
5.0
1.5
30
7
V
C
B
V
BE(sat)
I = 8A, I = 2A
−
−
V
C
B
h
FE
V
= 5V, I = 1A
20
4
−
CE
CE
C
V
= 5V, I = 8A
−
C
Storage Time
Fall Time
t
I = 6A, I = 1.2A, I = 2.4A
−
−
3.0
0.2
µs
µs
stg
C
B1
B2
t
f
I = 6A, I = 1.2A, I = 2.4A
−
1.0
C
B1
B2
.221 (5.6)
.134 (3.4) Dia
.630 (16.0)
.123 (3.1)
.315
(8.0)
.866
(22.0)
B
C
E
.158 (4.0)
.804
(20.4)
.215 (5.45)
.040 (1.0)
相关型号：
NTE2665
Silicon NPN Transistor Horizontal Deflection Output for High Resolution Display, Color TV
NTE
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