NTE5484 [NTE]
Silicon Controlled Rectifier (SCR) 8 Amp; 可控硅整流器（ SCR） 8安培
| 型号： | NTE5484 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Controlled Rectifier (SCR) 8 Amp |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE5480 thru NTE5487
Silicon Controlled Rectifier (SCR)
8 Amp
Description:
The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type
package suited for industrial and consumer applications. These 8 amp devices are available in volt-
ages ranging from 25V to 600V.
Features:
D Uniform Low–Level Noise–Immune Gate Triggering: IGT = 10mA Typ @ TC = +25°C
D Low Forward “ON” Voltage: vT = 1V Typ @ 5A @ +25°C
D High Surge–Current Capability: ITSM = 100A Peak
D Shorted Emitter Construction
Absolute Maximum Ratings: (TJ = –40° to +100°C unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM or VRRM
NTE5480 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
NTE5481 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5482 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5483 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5485 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5486 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5487 (This device is discontinued) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Forward Current RMS, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak Forward Surge Current (One Cycle, 60Hz, TJ = –40° to +100°C, ITSM . . . . . . . . . . . . . . . 100A
Circuit Fusing (t ≤ 8.3ms, TJ = –40° to +100°C), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A2s
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage (Note 2), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Typical Thermal Resistance, Case–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking
capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a
negative potential applied to the anode.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
T = +25°C
–
–
–
–
10
2
µA
mA
mA
mA
V
Peak Forward or Reverse
Blocking Current
I
I
,
Rated V
or V
,
J
DRM
DRM
Gate Open
RRM
RRM
T = +100°C
J
I
–
10
–
30
60
Gate Trigger Current (Continuous DC)
Gate Trigger Voltage (Continuous DC)
V = 7V, R = 100Ω,
GT
D
L
Note 3
T = –40°C
C
–
V
GT
V = 7V, R = 100Ω
D
–
0.75 1.5
L
T = –40°C
–
–
–
2.5
V
C
T = +100°C
J
0.2
–
–
V
Forward “ON” Voltage
v
I
= 15.7A, Note 4
1.4 2.0
V
TM
TM
Holding Current
I
V = 7V, Gate Open
–
10
–
30
60
–
mA
mA
µs
µs
µs
H
D
T = –40°C
–
C
Turn–On Time (t + t )
t
t
I = 20mA, I = 5A, V = Rated V
DRM
–
1
d
r
on
G
F
D
Turn–Off Time
–
15
25
–
I = 5A, I = 5A,
off
F
R
dv/dt = 30V/µs
T = +100°C,
J
–
–
V = Rated V
D
DRM
Forward Voltage Application Rate
(Exponential)
dv/dt Gate Open, T = +100°C,
–
50
–
V/µs
J
V = Rated V
D
DRM
Note 3. For optimum operation, i.e. faster turn–on, lower switching losses, best di/dt capability, rec-
ommended IGT = 200mA minimum.
Note 4. Pulsed, 1ms max., Duty Cycle ≤ 1%.
.431
(10.98
Max
Gate
Cathode
.855
(21.7)
Max
.125 (3.17) Max
.453
(111.5)
Max
Anode
10–32 UNF–2A
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