933983410115 [NXP]
TRANSISTOR 0.05 A, 250 V, NPN, Si, POWER TRANSISTOR, PLASTC, SMD, SC-73, 4 PIN, BIP General Purpose Power;型号: | 933983410115 |
厂家: | NXP |
描述: | TRANSISTOR 0.05 A, 250 V, NPN, Si, POWER TRANSISTOR, PLASTC, SMD, SC-73, 4 PIN, BIP General Purpose Power 开关 光电二极管 晶体管 |
文件: | 总8页 (文件大小:42K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
BSP19; BSP20
NPN high-voltage transistors
1999 Jun 01
Product specification
Supersedes data of 1997 Mar 03
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
FEATURES
PINNING
PIN
• Low current (max. 100 mA)
• High voltage (max. 350 V).
DESCRIPTION
1
2, 4
3
base
collector
emitter
APPLICATIONS
• Switching and amplification
• Especially used in telephony and automotive
applications.
4
handbook, halfpage
2, 4
DESCRIPTION
1
NPN transistor in a SOT223 plastic package.
PNP complement: BSP16.
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BSP19
−
−
400
V
V
BSP20
300
VCEO
collector-emitter voltage
BSP19
open base
−
−
−
−
−
−
350
250
5
V
V
V
BSP20
VEBO
IC
emitter-base voltage
collector current (DC)
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
100
100
1.2
mA
mA
W
IB
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
+150
150
+150
°C
°C
°C
Tamb
−65
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Jun 01
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
104
23
K/W
K/W
thermal resistance from junction to soldering point
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
IE = 0; VCE = 300 V
MIN.
MAX.
20
UNIT
nA
−
−
IEBO
hFE
VCEsat
Cc
IC = 0; VEB = 5 V
100
−
nA
VCE = 10 V; IC = 20 mA
40
collector-emitter saturation voltage IC = 50 mA; IB = 4 mA
−
0.5
2.5
−
V
collector capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
pF
fT
VCE = 10 V; IC = 10 mA; f = 100 MHz 70
MHz
1999 Jun 01
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
96-11-11
97-02-28
SOT223
1999 Jun 01
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 01
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
NOTES
1999 Jun 01
6
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
NOTES
1999 Jun 01
7
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© Philips Electronics N.V. 1999
SCA65
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Printed in The Netherlands
115002/03/pp8
Date of release: 1999 Jun 01
Document order number: 9397 750 05773
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