934049290118 [NXP]

600V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC;
934049290118
型号: 934049290118
厂家: NXP    NXP
描述:

600V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC

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Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136S series D  
BT136M series D  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated, sensitive gate  
triacsin aplastic envelopesuitable for  
surface mounting, intended for use in  
SYMBOL PARAMETER  
MAX. MAX. UNIT  
BT136S (or BT136M)- 500D 600D  
500 600  
general  
purpose  
and  
bidirectional  
phase control  
VDRM  
IT(RMS)  
ITSM  
Repetitive peak off-state  
V
A
A
switching  
voltages  
4
25  
4
25  
applications. These devices are  
intended to be interfaced directly to  
microcontrollers, logic integrated  
circuits and other low power gate  
trigger circuits.  
RMS on-state current  
Non-repetitive peak on-state current  
PINNING - SOT428  
PIN CONFIGURATION  
SYMBOL  
PIN  
NUMBER  
Standard Alternative  
tab  
S
M
1
2
MT1  
MT2  
gate  
MT2  
gate  
MT2  
MT1  
MT2  
T2  
T1  
3
2
G
1
3
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 107 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
4
A
t = 20 ms  
-
-
-
25  
27  
3.1  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
July 1997  
1
Rev 1.000  
Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136S series D  
BT136M series D  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Thermal resistance  
full cycle  
-
-
-
-
-
75  
3.0  
3.7  
-
K/W  
K/W  
K/W  
junction to mounting base half cycle  
Rth j-a  
Thermal resistance  
junction to ambient  
pcb (FR4) mounted; footprint as in Fig.14  
STATIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
IGT  
Gate trigger current  
VD = 12 V; IT = 0.1 A  
T2+ G+  
T2+ G-  
T2- G-  
T2- G+  
-
-
-
-
2.0  
2.5  
2.5  
5.0  
5
5
mA  
mA  
mA  
mA  
5
10  
IL  
Latching current  
VD = 12 V; IGT = 0.1 A  
T2+ G+  
T2+ G-  
T2- G-  
T2- G+  
-
1.6  
4.5  
1.2  
2.2  
1.2  
1.4  
0.7  
0.4  
0.1  
10  
15  
mA  
mA  
mA  
mA  
mA  
V
V
V
mA  
-
-
10  
-
15  
IH  
VT  
VGT  
Holding current  
On-state voltage  
Gate trigger voltage  
VD = 12 V; IGT = 0.1 A  
IT = 5 A  
-
10  
-
1.70  
1.5  
-
VD = 12 V; IT = 0.1 A  
-
0.25  
-
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C  
ID  
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C  
0.5  
DYNAMIC CHARACTERISTICS  
Tj = 25 ˚C unless otherwise stated  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
dVD/dt  
tgt  
Critical rate of rise of  
off-state voltage  
Gate controlled turn-on  
time  
VDM = 67% VDRM(max); Tj = 125 ˚C;  
exponential waveform; RGK = 1 kΩ  
ITM = 6 A; VD = VDRM(max); IG = 0.1 A;  
dIG/dt = 5 A/µs  
-
-
5
2
-
-
V/µs  
µs  
July 1997  
2
Rev 1.000  
Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136S series D  
BT136M series D  
IT(RMS) / A  
Ptot / W  
8
Tmb(max) / C  
5
4
3
2
1
0
101  
104  
107  
110  
113  
116  
119  
122  
125  
7
107 C  
= 180  
120  
1
6
5
4
3
2
1
0
90  
60  
30  
0
1
2
3
4
5
-50  
0
50  
100  
150  
IT(RMS) / A  
Tmb / C  
Fig.1. Maximum on-state dissipation, Ptot, versus rms  
on-state current, IT(RMS), where α = conduction angle.  
Fig.4. Maximum permissible rms current IT(RMS)  
versus mounting base temperature Tmb.  
,
IT(RMS) / A  
ITSM / A  
12  
10  
8
1000  
100  
10  
I
TSM  
time  
I
T
T
Tj initial = 25 C max  
6
dIT/dt limit  
4
T2- G+ quadrant  
2
0
10us  
100us  
1ms  
T / s  
10ms  
100ms  
0.01  
0.1  
1
10  
surge duration / s  
Fig.2. Maximum permissible non-repetitive peak  
on-state current ITSM, versus pulse width tp, for  
sinusoidal currents, tp 20ms.  
Fig.5. Maximum permissible repetitive rms on-state  
current IT(RMS), versus surge duration, for sinusoidal  
currents, f = 50 Hz; Tmb 107˚C.  
VGT(Tj)  
VGT(25 C)  
ITSM / A  
30  
25  
20  
15  
10  
5
1.6  
1.4  
1.2  
1
I
TSM  
time  
I
T
T
Tj initial = 25 C max  
0.8  
0.6  
0.4  
0
1
10  
100  
1000  
-50  
0
50  
Tj / C  
100  
150  
Number of cycles at 50Hz  
Fig.3. Maximum permissible non-repetitive peak  
on-state current ITSM, versus number of cycles, for  
sinusoidal currents, f = 50 Hz.  
Fig.6. Normalised gate trigger voltage  
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.  
July 1997  
3
Rev 1.000  
Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136S series D  
BT136M series D  
IGT(Tj)  
IGT(25 C)  
IT / A  
12  
10  
8
Tj = 125 C  
Tj = 25 C  
3
T2+ G+  
T2+ G-  
T2- G-  
T2- G+  
typ  
max  
2.5  
2
Vo = 1.27 V  
Rs = 0.091 ohms  
6
1.5  
1
4
2
0.5  
0
0
0
0.5  
1
1.5  
VT / V  
2
2.5  
3
-50  
0
50  
100  
150  
Tj / C  
Fig.7. Normalised gate trigger current  
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.  
Fig.10. Typical and maximum on-state characteristic.  
IL(Tj)  
IL(25 C)  
Zth j-mb (K/W)  
10  
1
3
2.5  
2
unidirectional  
bidirectional  
1.5  
1
t
P
D
0.1  
0.01  
p
t
0.5  
0
10us  
0.1ms  
1ms  
10ms  
tp / s  
0.1s  
1s  
10s  
-50  
0
50  
Tj / C  
100  
150  
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),  
versus junction temperature Tj.  
Fig.11. Transient thermal impedance Zth j-mb, versus  
pulse width tp.  
dVD/dt (V/us)  
1000  
IH(Tj)  
IH(25C)  
3
2.5  
2
100  
10  
1
1.5  
1
0.5  
0
-50  
0
50  
100  
150  
0
50  
100  
150  
Tj / C  
Tj / C  
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),  
versus junction temperature Tj.  
Fig.12. Typical, critical rate of rise of off-state voltage,  
dVD/dt versus junction temperature Tj.  
July 1997  
4
Rev 1.000  
Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136S series D  
BT136M series D  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 1.1 g  
seating plane  
2.38 max  
0.93 max  
1.1  
5.4  
6.73 max  
tab  
4 min  
4.6  
6.22 max  
0.5 min  
10.4 max  
0.5  
2
0.3  
0.5  
3
1
0.8 max  
(x2)  
2.285 (x2)  
Fig.13. SOT428 : centre pin connected to tab.  
MOUNTING INSTRUCTIONS  
Dimensions in mm  
7.0  
7.0  
2.15  
2.5  
1.5  
4.57  
Fig.14. SOT428 : minimum pad sizes for surface mounting.  
Notes  
1. Plastic meets UL94 V0 at 1/8".  
July 1997  
5
Rev 1.000  
Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136S series D  
BT136M series D  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1997  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
July 1997  
6
Rev 1.000  
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Glass passivated, sensitive gate triacs in a plastic envelope suitable fo  
intended for use in general purpose bidirectional switching and phase  
These devices are intended to be interfaced directly to microcontroller  
circuits and other low power gate trigger circuits.  
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BT136S-600D  
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BT136S-600D  
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9340 492 90118  
SOT42  
13"  
Please read information about some discontinued variants of this prod  
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