BFM520 [NXP]
Dual NPN wideband transistor; 双NPN宽带晶体管
| 型号： | BFM520 |
| 厂家： | 
NXP |
| 描述： | Dual NPN wideband transistor |
| 文件： | 总10页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFM520
Dual NPN wideband transistor
1996 Oct 08
Product specification
Supersedes data of 1995 Sep 04
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
FEATURES
PINNING - SOT363A
• Small size
PIN
SYMBOL
DESCRIPTION
• Temperature and hFE matched
• Low noise and high gain
1
2
3
4
5
6
b1
e1
c2
b2
e2
c1
base 1
emitter 1
collector 2
base 2
• High gain at low current and low capacitance at low
voltage
• Gold metallization ensures excellent reliability.
emitter 2
collector 1
APPLICATIONS
• Oscillator and buffer amplifiers
• Balanced amplifiers
• LNA/mixers.
6
5
4
handbook, halfpage
c
c
2
1
b
1
b
2
DESCRIPTION
e
e
2
1
1
2
3
Dual transistor with two silicon NPN RF dies in a surface
mount 6-pin SOT363 (S-mini) package. The transistor is
primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
Top view
MAM210
Marking code: N2.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Any single transistor
Cre
fT
feedback capacitance
Ie = 0; VCB = 3 V; f = 1 MHz
−
0.4
9
−
−
−
pF
transition frequency
insertion power gain
IC = 20 mA; VCE = 3 V; f = 900 MHz −
GHz
dB
IC = 20 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 °C
13
14.5
2
s21
GUM
F
maximum unilateral power gain
noise figure
IC = 20 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 °C
−
−
15
−
dB
dB
IC = 5 mA; VCE = 3 V;
1.2
1.6
f = 900 MHz; ΓS = Γopt
Rth j-s
thermal resistance from junction
to soldering point
single loaded
double loaded
−
−
−
−
230
115
K/W
K/W
1996 Oct 08
2
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Any single transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
open base
−
20
8
V
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
−
V
open collector
−
2.5
70
1
V
−
mA
W
Ptot
Tstg
Tj
up to Ts = 118 °C; note 1
−
−65
−
+175 °C
175
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
K/W
Rth j-s
thermal resistance from junction
to soldering point; note 1
single loaded
double loaded
230
115
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08
3
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
DC characteristics of any single transistor
V(BR)CBO collector-base breakdown voltage
IC = 2.5 µA; IE = 0
20
−
−
V
V(BR)CEO collector-emitter breakdown voltage IC = 10 µA; IB = 0
8
−
−
V
V(BR)EBO emitter-base breakdown voltage
IE = 2.5 µA; IC = 0
VCB = 6 V; IE = 0
2.5
−
−
−
V
ICBO
hFE
collector-base leakage current
DC current gain
−
50
250
nA
IC = 20 mA; VCE = 6 V
60
120
DC characteristics of the dual transistor
∆hFE
ratio of highest and lowest DC
current gain
IC1 = IC2 = 20 mA;
VCE1 = VCE2 = 6 V
1
0
1.2
1
−
−
∆VBEO
difference between highest and
lowest base-emitter voltage
(offset voltage)
IE1 = IE2 = 30 mA; Tamb = 25 °C
mV
AC characteristics of any single transistor
fT
transition frequency
collector capacitance
feedback capacitance
IC = 20 mA; VCE = 3 V; f = 1 GHz
IE = ie = 0; VCB = 3 V; f = 1 MHz
IC = 0; VCB = 3 V; f = 1 MHz
−
−
−
−
9
−
−
−
−
GHz
pF
Cc
0.5
0.4
15
Cre
GUM
pF
maximum unilateral power gain;
note 1
IC = 20 mA; VCE = 3 V;
Tamb = 25 °C; f = 900 MHz
dB
IC = 20 mA; VCE = 3 V;
Tamb = 25 °C; f = 2 GHz
−
9
−
dB
dB
dB
dB
dB
insertion power gain
noise figure
IC = 20 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 °C
13
−
14.5
1.2
1.7
1.9
−
2
s21
F
IC = 5 mA; VCE = 3 V;
f = 900 MHz; ΓS = Γopt
1.6
2.1
−
IC = 20 mA; VCE = 3 V;
f = 900 MHz; ΓS = Γopt
−
IC = 5 mA; VCE = 3 V;
−
f = 2 GHz; ΓS = Γopt
Note
2
s21
------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log
dB
(1 – s11 2) (1 – s22
)
2
1996 Oct 08
4
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
MRA705
MBG228
1.5
12
handbook, halfpage
handbook, halfpage
P
f
tot
T
V
V
= 6V
= 3V
(mW)
CE
CE
(GHz)
double loaded
1
8
single loaded
0.5
4
0
0
0
50
100
150
200
−1
2
o
10
1
10
10
T
( C)
I
(mA)
s
C
f = 1 GHz; Tamb = 25 °C.
Fig.2 Power derating as a function of soldering
point temperature; typical values.
Fig.3 Transition frequency as a function of
collector current; typical values.
MRA704
MRA703
0.6
250
handbook, halfpage
handbook, halfpage
h
FE
200
C
re
(pF)
0.4
150
100
50
0.2
0
10
0
−2
−1
2
10
1
10
10
0
4
8
12
I
(mA)
V
(V)
C
CB
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.4 DC current gain as a function of collector
current; typical values.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
1996 Oct 08
5
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
MGG203
MGG204
20
20
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
MSG/G
G
max
16
16
12
8
UM
12
8
MSG/G
G
max
UM
4
4
0
0
0
0
10
20
30
10
20
30
I
(mA)
I
(mA)
C
C
f = 900 MHz; VCE = 3 V.
f = 2 GHz; VCE = 3 V.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MGG205
MGG206
50
50
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
40
40
G
UM
G
MSG/G
max
UM
30
30
MSG/G
max
20
10
0
20
10
0
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 5 mA; VCE = 3 V.
IC = 20 mA; VCE = 3 V.
Fig.8 Gain as a function of frequency; typical
values.
Fig.9 Gain as a function of frequency; typical
values.
1996 Oct 08
6
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
MRA714
MLB585
4
20
handbook, halfpage
handbook, halfpage
F
(dB)
G
ass
(dB)
3
15
f = 900 MHz
1000 MHz
f = 2000 MHz
10
5
2
1000 MHz
2000 MHz
900 MHz
500 MHz
1
0
0
2
1
10
10
2
1
10
10
I (mA)
C
I
(mA)
C
VCE = 3 V.
VCE = 3 V.
Fig.10 Minimum noise figure as a function of
collector current, typical values.
Fig.11 Associated available gain as a function of
collector current, typical values.
MRA715
MLB586
4
20
handbook, halfpage
handbook, halfpage
I
= 5 mA
20 mA
F
(dB)
C
G
ass
(dB)
3
15
10
5
2
I
=
C
20 mA
1
0
5 mA
0
10
2
3
4
10
10
2
3
4
10
10
10
f (MHz)
f (MHz)
VCE = 3 V.
VCE = 3 V.
Fig.12 Minimum noise figure as a function of
frequency, typical values.
Fig.13 Associated available gain as a function of
frequency, typical values.
1996 Oct 08
7
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
APPLICATION INFORMATION
SPICE parameters for any single BFM520 die
SEQUENCE No. PARAMETER VALUE
C1
C2
andbook, halfpage
UNIT
fA
1
IS
1.016
220.1
1.000
48.06
510.0
283.0
2.035
100.7
0.988
1.692
2.352
24.48
1.022
10.00
1.000
10.00
0.775
2.210
0.000
1.110
3.000
1.245
600.0
0.258
8.616
6.788
1.414
110.3
45.01
447.6
189.2
0.071
0.130
543.7
0.000
750.0
0.000
0.780
LP
LP
2
BF
−
3
NF
−
B1
B2
LB
T1
T2
LB
4
VAF
IKF
ISE
NE
V
5
mA
fA
−
LE
LE
6
7
MBG188
E1
E2
8
BR
−
9
NR
−
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
VAR
IKR
ISC
NC
V
Fig.14 Package equivalent circuit SOT363A
(inductance only).
mA
aA
−
RB
Ω
IRB
RBM
RE
µA
Ω
Lead inductances (nH)
Ω
LP
LB
LE
0.4
0.6
1.0
RC
Ω
XTB
EG
−
eV
−
XTI
CJE
VJE
MJE
TF
pF
mV
−
ps
−
E2
E1
B2
C2
3
27
1
XTF
VTF
ITF
6
V
mA
deg
fF
mV
−
27
17
3
PTF
CJC
VJC
MJC
XCJC
TR
3
36
48
C1
48
B1
36
E2
17
E1
3
6
−
MBG189
B2
C2
ps
F
CJS
VJS
MJS
FC
mV
−
Fig.15 Package capacitance (fF) between
indicated nodes.
−
Note
1. These parameters have not been extracted,
the default values are shown.
1996 Oct 08
8
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
PACKAGE OUTLINE
0.2
0.25
0.10
1.1
0.8
0.1
0.0
0.9
0.6
0.3
0.1
0.2
B
M
B
1.35
1.15
A
1
2
3
6
5
4
0.65
0.65
0.3
0.2
(6x)
2.2
1.8
2.2
2.0
0.2
M
A
MSA368
Dimensions in mm.
Fig.16 SOT363.
1996 Oct 08
9
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 08
10
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