BLF4G10S-120 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLF4G10S-120 |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总14页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF4G10-120; BLF4G10S-120
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1:
Typical performance
RF performance at Th = 25 °C in a common base class-AB test circuit.
Mode of
f
VDS PL
Gp
ηD
ACPR400 ACPR600 EVMrms IMD3
operation
(MHz)
(V) (W)
(dB) (%) (dBc)
(dBc)
(typ)
(%)
(dBc)
(typ)
(typ)
19
(typ)
CW
861 to 961 28
120
57
40
46
-
-
-
-
GSM EDGE 861 to 961 28
2-tone 861 to 961 28
48 (AV)
19
−61[1]
−72 [2]
1.5
-
-
120 (PEP) 19
-
-
−31
[1] ACPR400 at 30 kHz resolution bandwidth
[2] ACPR600 at 30 kHz resolution bandwidth
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V
and an IDq of 850 mA:
◆ Load power = 48 W (AV)
◆ Gain = 19 dB (typ)
◆ Efficiency = 40 % (typ)
◆ ACPR400 = −61 dBc (typ)
◆ ACPR600 = −72 dBc (typ)
◆ EVMrms = 1.5 % (typ)
■ Easy power control
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (800 MHz to 1000 MHz)
■ Internally matched for ease of use
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
1.3 Applications
■ RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2:
Pin
BLF4G10-120 (SOT502A)
Pinning
Description
Simplified outline
Symbol
1
2
3
drain
gate
1
3
1
3
2
[1]
2
source
sym039
BLF4G10S-120 (SOT502B)
1
2
3
drain
gate
1
3
1
3
2
[1]
2
source
sym039
[1] Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
-
Description
Version
BLF4G10-120
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
BLF4G10S-120
-
earless flanged LDMOST ceramic package; 2 leads SOT502B
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5
+15
12
V
-
A
Tstg
Tj
storage temperature
junction temperature
−65
+150
200
°C
°C
-
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Product data sheet
Rev. 01 — 10 January 2006
2 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Thermal characteristics
Symbol Parameter
Conditions
Tcase = 80 °C
PL = 60 W
Min
Typ
Max Unit
Rth(j-case) thermal resistance from
junction to case
-
-
0.76 0.85 K/W
0.65 0.74 K/W
PL = 120 W
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA
65
2.5
2.7
-
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
VDS = 10 V; ID = 180 mA
VDS = 28 V; ID = 900 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 6 V;
3.1
3.2
-
3.5
3.7
3
V
V
µA
A
IDSX
drain cut-off current
27
30
-
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 15 V; VDS = 0 V
VDS = 10 V; ID = 10 A
-
-
-
-
300 nA
forward transconductance
9.0
0.09
-
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V;
ID = 6 A
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
2.5
-
pF
7. Application information
Table 7:
Mode of operation: 2-tone (100 kHz tone spacing); f = 960 MHz.
DS = 28 V; IDq = 850 mA; Tcase = 25 °C; unless otherwise specified.
Application information
V
Symbol Parameter
Conditions
Min
18
-
Typ
Max Unit
Gp
power gain
PL(PEP) = 120 W
PL(PEP) = 120 W
PL(PEP) = 120 W
PL(PEP) = 120 W
19
-
dB
dB
%
IRL
ηD
input return loss
drain efficiency
−8
−5
-
44
-
46
IMD3
third order intermodulation
distortion
−31
−27
dBc
7.1 Ruggedness in class-AB operation
The BLF4G10-120 and BLF4G10S-120 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 850 mA; PL = 120 W (CW); f = 960 MHz.
9397 750 14549
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Product data sheet
Rev. 01 — 10 January 2006
3 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
001aac400
001aac401
20.5
80
20
60
G
η
D
p
G
η
D
p
(dB)
(%)
(dB)
(%)
19.5
60
19
40
18.5
17.5
16.5
40
20
0
η
G
p
D
η
G
p
D
18
17
20
0
300
0
50
100
150
200
0
100
200
P
(W)
P
(W)
L(PEP)
L
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
f = 960 MHz
f = 960 MHz
Fig 1. One-tone CW power gain and drain efficiency
as functions of load power; typical values
Fig 2. Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
001aac402
001aac403
0
0
IMD
(dBc)
IMD3
−20
IMD3
(dBc)
−20
IMD5
−40
−40
IMD7
2
1
4
3
−60
−80
−60
−80
0
100
200
300
0
100
200
300
P
(W)
P
(W)
L(PEP)
L(PEP)
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
f = 960 MHz
VDS = 28 V; Tcase = 25 °C; f = 960 MHz
(1) IDq = 650 mA
(2) IDq = 750 mA
(3) IDq = 850 mA
(4) IDq = 950 mA
Fig 3. Intermodulation distortion as a function of peak
envelope load power; typical values
Fig 4. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
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Product data sheet
Rev. 01 — 10 January 2006
4 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
001aac404
001aac405
20
60
−55
G
η
ACPR
(dBc)
p
D
(dB)
(%)
G
p
ACPR
400
19
40
−65
−75
−85
η
D
ACPR
18
17
20
600
0
0
20
40
60
P
80
(W)
0
20
40
60
P
80
(W)
L(AV)
L(AV)
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
f = 960 MHz
f = 960 MHz
Fig 5. GSM EDGE power gain and drain efficiency as
functions of average load power; typical values
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
functions of average load power; typical values
001aac407
001aac406
−57
4
3
2
1
0
4
ACPR
(dBc)
EVM
(%)
EVM
rms
(%)
−59
−61
−63
−65
3
2
1
0
ACPR
400
EVM
rms
0
20
40
60
0
20
40
60
P
80
(W)
η
( )
%
D
L(AV)
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 850 mA; Tcase = 25 °C;
f = 960 MHz
f = 960 MHz
Fig 7. GSM EDGE rms EVM as a function of average
load power; typical values
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as
functions of drain efficiency; typical values
9397 750 14549
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
5 of 14
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C18
C17
C9
L4
V
C8
DD
R2
C13
C12
R3
R1
L1
L2
+V
G
C3
C10
C4
C2
Q1
L3
L5
C1
L6
L11
C16
L12
RF in
L7
L8
L9
L10
RF out
C6
C14
C15
C7
C5
C11
001aac408
See Table 8 for list of components.
Fig 9. Class-AB test circuit for operation at 960 MHz
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx
xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx
xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
C18
L4
C9
VDD
R1
C17
L1
L2
R2
R3
C8
C13
C12
+V
G
C4 C10
C3
C2
L3
L5
L6
L7
L8
L9
L10
L11
L12
C14
C1
C16
C6
C15
C5
C7
C11
001aac409
The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Duroid dielectric (εr = 2.5), thickness 31 mils.
The other side is unetched and serves as a ground plane.
See Table 8 for list of components.
Fig 10. Component layout for 960 MHz test circuit
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
Table 8:
List of components (see Figure 9 and Figure 10)
Value
Component Description
Dimensions
[1]
[1]
[1]
[1]
[1]
[2]
C1
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
30 pF
C2, C12
C3, C13
C4
47 pF
300 pF
6.2 pF
C5
7.5 pF
C6, C7, C11, trimmer capacitors (Tekelec)
C15
0.8 pF to 8 pF
C8
multilayer ceramic chip capacitor
tantalum capacitor
20 nF
C9
10 µF; 35 V
6.8 pF
[1]
[1]
[1]
[3]
C10
C14
C16
C17
C18
L1
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
tantalum capacitor
5.1 pF
56 pF
10 µF; 35 V
220 µF; 63 V
grade 4S2
electrolytic capacitor
ferrite bead (long)
L2
3 turn inductor ID 4.5 mm,
Cu-wire diameter 1 mm
L3
4 turn inductor ID 3 mm,
Cu-wire diameter 1 mm
L4
ferrite bead (short)
stripline
grade 4S2
Z0 = 50 Ω
Z0 = 50 Ω
Z0 = 25 Ω
Z0 = 10 Ω
Z0 = 10 Ω
Z0 = 25 Ω
Z0 = 50 Ω
Z0 = 50 Ω
8.2 Ω; 0.1 W
4.7 Ω; 0.1 W
10 Ω; 0.6 W
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
L5
(W × L) 2 mm × 17.2 mm
(W × L) 2 mm × 25.4 mm
(W × L) 5.6 mm × 17.4 mm
(W × L) 16 mm × 10.2 mm
(W × L) 16 mm × 10.2 mm
(W × L) 5.6 mm × 17.4 mm
(W × L) 2 mm × 25.4 mm
(W × L) 2 mm × 17.2 mm
L6
stripline
L7
stripline
L8
stripline
L9
stripline
L10
L11
L12
R1
R2
R3
stripline
stripline
stripline
SMD resistor
SMD resistor
metal film resistor
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] Mounted flat.
[3] Low ESR.
[4] Striplines are on a double copper-clad Ultralam 2000 PCB (εr = 2.5); thickness = 31 mils.
9397 750 14549
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
8 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 11. Package outline SOT502A
9397 750 14549
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
9 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
UNIT
1
1
1
2
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502B
Fig 12. Package outline SOT502B
9397 750 14549
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
10 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
10. Abbreviations
Table 9:
Acronym
ACPR
CDMA
CW
Abbreviations
Description
Adjacent Channel Power Ratio
Code Division Multiple Access
Continuous Wave
EDGE
ESR
Enhanced Data rates for GSM Evolution
Equivalent Series Resistance
Error Vector Magnitude
EVM
GSM
Global System for Mobile communications
quiescent drain current
IDq
LDMOS
PEP
Laterally Diffused Metal Oxide Semiconductor
Peak Envelope Power
RF
Radio Frequency
SMD
Surface-Mount Device
VSWR
Voltage Standing-Wave Ratio
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Product data sheet
Rev. 01 — 10 January 2006
11 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
11. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
20060110 Product data sheet
Change notice Doc. number
9397 750 14549
Supersedes
BLF4G10-120_
4G10S-120_1
-
-
9397 750 14549
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
12 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
Notice — All referenced brands, product names, service names and
14. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14549
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
13 of 14
BLF4G10-120; BLF4G10S-120
Philips Semiconductors
UHF power LDMOS transistor
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
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© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
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consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 10 January 2006
Document number: 9397 750 14549
Published in The Netherlands
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