BLF4G20LS-110B,112 [NXP]
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power;
| 型号： | BLF4G20LS-110B,112 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power 放大器 CD 晶体管 |
| 文件： | 总12页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF4G20LS-110B
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1:
Typical performance
f = 1930 MHz to 1990 MHz; Tcase = 25 °C; IDq = 650 mA; unless otherwise specified; in a class-AB
production test circuit; typical values
Mode of operation
VDS
(V)
PL
(W)
Gp
(dB) (%)
ηD
ACPR400
(dBc)
ACPR600
(dBc)
EVMrms
(%)
CW
28
28
100
13.4 49
13.8 38.5 −61[1]
-
-
-
GSM EDGE
48 (AV)
−74 [2]
2.1
[1] ACPR400 at 30 kHz resolution bandwidth.
[2] ACPR600 at 30 kHz resolution bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an IDq of 650 mA:
◆ Load power = 48 W (AV)
◆ Gain = 13.8 dB (typ)
◆ Efficiency = 38.5 % (typ)
◆ ACPR400 = −61 dBc (typ)
◆ ACPR600 = −74 dBc (typ)
◆ EVMrms = 2.1 % (typ)
■ Easy power control
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1800 MHz to 2000 MHz)
■ Internally matched for ease of use
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor
1.3 Applications
■ RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 1800 MHz to 2000 MHz frequency range.
2. Pinning information
Table 2:
Pinning
Pin
1
Description
drain
Simplified outline
Symbol
1
3
1
3
2
2
gate
[1]
2
3
source
sym039
[1] Connected to flange
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
-
Description
Version
BLF4G20LS-110B
earless flanged LDMOST ceramic package; 2 leads SOT502B
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5
+15
12
V
-
A
Tstg
Tj
storage temperature
junction temperature
−65
+150
200
°C
°C
-
5. Thermal characteristics
Table 5:
Symbol
Rth(j-case)
Thermal characteristics
Parameter
Conditions
Tcase = 80 °C
PL = 40 W
Min
Typ
Max
Unit
thermal resistance from
junction to case
-
-
0.62
0.52
0.71
0.61
K/W
K/W
PL = 100 W
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
2 of 12
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor
6. Characteristics
Table 6:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
VDS = 10 V; ID = 180 mA
VDS = 28 V; ID = 900 mA
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 6 V;
2.5 3.1 3.5
2.7 3.2 3.7
V
V
-
-
3
-
µA
A
IDSX
drain cut-off current
27
30
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = ±15 V; VDS = 0 V
-
-
-
-
300 nA
forward transconductance
VDS = 10 V; ID = 10 A
9.0
90
-
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V;
ID = 6 A
mΩ
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
2.5
-
pF
7. Application information
Table 7:
Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at VDS = 28 V;
Dq = 650 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.
Application information
I
Symbol Parameter
Conditions
Min
Typ Max Unit
13.8 dB
−10 −6.5 dB
38.5
Gp
power gain
PL(AV) = 48 W
PL(AV) = 48 W
PL(AV) = 48 W
13
-
-
IRL
input return loss
drain efficiency
ηD
36
-
-
%
ACPR400 adjacent channel power ratio (400 kHz) PL(AV) = 48 W
ACPR600 adjacent channel power ratio (600 kHz) PL(AV) = 48 W
−61 −58 dBc
−74 −71 dBc
-
EVMrms
EVMM
rms EDGE signal distortion error
peak EDGE signal distortion error
PL(AV) = 48 W
PL(AV) = 48 W
-
2.1
7.0
3.3
10
%
%
-
7.1 Ruggedness in class-AB operation
The BLF4G20LS-110B is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 650 mA; PL = 110 W (CW); f = 1990 MHz.
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
3 of 12
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor
001aac387
001aac388
50
15
60
15
G
η
D
p
G
p
(dB)
14
(%)
40
G
η
D
G
p
p
(dB)
(%)
13
40
η
D
13
12
11
10
30
20
10
0
η
D
11
20
9
0
160
0
40
80
120
0
20
40
60
80
P
100
(W)
L(AV)
P
(W)
L
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 1990 MHz
f = 1990 MHz
Fig 1. One-tone CW power gain and drain efficiency
as functions of load power; typical values
Fig 2. Two-tone CW power gain and drain efficiency
as functions of average load power; typical
values
001aac389
001aac390
0
0
IMD
(dBc)
IMD3
(dBc)
−20
-20
IMD3
IMD5
IMD7
−40
-40
1
2
3
−60
−80
4
-60
-80
0
20
40
60
80
P
100
(W)
0
20
40
60
80
P
100
(W)
L(AV)
L(AV)
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 1990 MHz
VDS = 28 V; Tcase = 25 °C; f = 1990 MHz
(1) IDq = 550 mA
(2) IDq = 650 mA
(3) IDq = 750 mA
(4) IDq = 850 mA
Fig 3. Intermodulation distortion as a function of
average load power; typical values
Fig 4. Third order intermodulation distortion as a
function of average load power; typical values
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
4 of 12
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor
001aac391
001aac392
15
50
−50
G
η
D
p
ACPR
(dBc)
(dB)
14
(%)
40
G
p
−60
−70
−80
−90
13
12
11
10
30
20
10
0
ACPR
ACPR
400
η
D
600
0
20
40
60
P
80
(W)
0
20
40
60
P
80
(W)
L(AV)
L(AV)
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 1990 MHz
f = 1990 MHz
Fig 5. GSM EDGE power gain and drain efficiency as
functions of average load power; typical values
Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
a function of average load power; typical values
001aac394
001aac393
−56
4
3
2
1
0
12
ACPR
(dBc)
EVM
(%)
EVM
(%)
−60
−64
−68
−72
EVM
M
8
4
0
ACPR
400
EVM
60
rms
EVM
rms
0
10
20
30
40
50
0
20
40
80
(W)
η
(%)
P
D
L(AV)
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 650 mA; Tcase = 25 °C;
f = 1990 MHz
f = 1990 MHz
Fig 7. GSM EDGE rms EVM and peak EVM as
functions of average load power; typical values
Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as
functions of drain efficiency; typical values
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
5 of 12
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor
8. Test information
V
DD
C11
C8
C9
C10
C3
R1
C4
+ V
G
input
50 Ω
output
50 Ω
C2
C6
C1
C5
C7
001aad664
See Table 8 for list of components.
Fig 9. Test circuit for operation at 1990 MHz
C11
V
C8 C9
DD
C3
12.5 mm
W1
C10
17.6 mm
R1
C4
C6
C2
15.2 mm
12.0 mm
C5
C7
C1
BLF4G20 − 110B Input −PCS− Rev 2
BLF4G20 − 110B Output −PCS− Rev 2
001aac395
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
εr = 3.5 and thickness = 0.76 mm.
See Table 8 for list of components.
Fig 10. Component layout for 1990 MHz test circuit
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
6 of 12
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor
Table 8:
List of components (see Figure 10).
Value
Component Description
Dimensions Catalogue number
[1]
C1
multilayer ceramic chip
capacitor
0.1 pF
[1]
C2, C4, C8 multilayer ceramic chip
capacitor
11 pF
C3, C10
C5
tantalum capacitor
10 µF
[1]
[1]
[1]
multilayer ceramic chip
capacitor
0.5 pF
C6
multilayer ceramic chip
capacitor
8.2 pF
0.2 pF
1 µF
C7
multilayer ceramic chip
capacitor
C9
multilayer ceramic chip
capacitor
1812X7R105KL2AB
C11
Philips electrolytic
capacitor
220 µF; 35 V
5.6 Ω
R1
Philips chip resistor
hand made wire
0603
W1
5 mm
[1] American Technical Ceramics type 100B or capacitor of same quality.
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
7 of 12
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT
1
1
1
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502B
Fig 11. Package outline SOT502B
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
8 of 12
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor
10. Abbreviations
Table 9:
Acronym
ACPR
CDMA
CW
Abbreviations
Description
Adjacent Channel Power Ratio
Code Division Multiple Access
Continuous Wave
EDGE
EVM
Enhanced Data rates for GSM Evolution
Error Vector Magnitude
GSM
Global System for Mobile communications
quiescent drain current
IDq
LDMOS
RF
Laterally Diffused Metal Oxide Semiconductor
Radio Frequency
VSWR
Voltage Standing Wave Ratio
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
9 of 12
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor
11. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
Change notice Doc. number
9397 750 14548
Supersedes
BLF4G20LS-110B_1 20060110
Product data sheet
-
-
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
10 of 12
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
Notice — All referenced brands, product names, service names and
14. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14548
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
11 of 12
BLF4G20LS-110B
Philips Semiconductors
UHF power LDMOS transistor
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
7.1
8
9
10
11
12
13
14
15
16
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 10 January 2006
Document number: 9397 750 14548
Published in The Netherlands
相关型号：
BLF4G22S-100,112
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power
NXP
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