BLF4G22-130 [NXP]
UHF power LDMOS transistor; UHF功率LDMOS晶体管
| 型号： | BLF4G22-130 |
| 厂家： | 
NXP |
| 描述： | UHF power LDMOS transistor |
| 文件： | 总13页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
Rev. 01 — 3 July 2007
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
Tcase = 25 °C in a common source class-AB test circuit.
Mode of operation
f
VDS
(V)
28
PL(AV) Gp
ηD
(dB) (%) (dBc) (dBc)
13.5 26 −37 −41
IMD3
ACPR
(MHz)
(W)
2-carrier W-CDMA[1]
f1 = 2135;
f2 = 2145
33
[1] 10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 - 64 DPCH.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and an IDq of
1150 mA:
N Average output power = 33 W
N Power gain = 13.8 dB
N Efficiency = 26 %
N ACPR = −41 dBc
N IMD3 = −37 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness (> 10 : 1 VSWR at 130 W (CW))
I High efficiency
I High peak power capability (> 190 W)
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use
BLF4G22-130; BLF4G22LS-130
NXP Semiconductors
UHF power LDMOS transistor
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range.
2. Pinning information
Table 2.
Pin
BLF4G22-130 (SOT502A)
Pinning
Description
Simplified outline
Symbol
1
2
3
drain
gate
1
3
2
1
3
[1]
source
2
sym112
BLF4G22LS-130 (SOT502B)
1
2
3
drain
gate
1
3
2
1
[1]
source
2
3
sym112
[1] Connected to flange
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF4G22-130
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
SOT502A
BLF4G22LS-130 -
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5 +15
V
-
15
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
200 °C
-
BLF4G22-130_4G22LS-130_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
2 of 13
BLF4G22-130; BLF4G22LS-130
NXP Semiconductors
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Symbol
Rth(j-case)
Thermal characteristics
Parameter
thermal resistance from Tcase = 80 °C; BLF4G22-130
Conditions
Type
Typ
0.56
0.50
Max
0.65
0.59
Unit
K/W
K/W
junction to case
PL = 33 W
BLF4G22LS-130
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
VGS = 0 V; ID = 2.1 mA
Min
Typ
Max Unit
V(BR)DSS drain-source breakdown
voltage
65
-
-
V
VGS(th)
IDSS
gate-source threshold voltage VDS = 10 V; ID = 230 mA
2.5
-
3.1
-
3.5
5
V
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
µA
A
IDSX
VGS = VGS(th) + 6 V;
35
44
-
V
DS = 10 V
IGSS
gfs
gate leakage current
VGS = +15 V; VDS = 0 V
VDS = 10 V; ID = 12.8 A
-
-
-
-
420 nA
forward transconductance
11
0.07
-
-
S
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 6 V;
ID = 7.7 A
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
3.4
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF,
3GPP test model 1, 1-64 DPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz;
f4 = 2167.5 MHz.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Gp
power gain
PL(AV) = 33 W
PL(AV) = 33 W
PL(AV) = 33 W
PL(AV) = 33 W
12.5 13.5
-
-
-
dB
dB
%
RLin
ηD
input return loss
drain efficiency
−9
24
-
−15
26
IMD3
third order intermodulation
distortion
−37
−34 dBc
ACPR
adjacent channel power ratio
PL(AV) = 33 W
-
−41
−39 dBc
7.1 Ruggedness in class-AB operation
The BLF4G22-130 and the BLF4G22LS-130 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 1150 mA; PL = 130 W (CW).
BLF4G22-130_4G22LS-130_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
3 of 13
BLF4G22-130; BLF4G22LS-130
NXP Semiconductors
UHF power LDMOS transistor
001aag620
001aag621
40
40
−15
IMD3
ACPR
(dBc)
G
η
D
(%)
p
(dB)
30
30
−25
−35
−45
−55
η
D
IMD3
20
10
0
20
10
0
G
p
ACPR
0
10
20
30
40
P
50
(W)
0
10
20
30
40
P
50
(W)
L(AV)
L(AV)
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 1990 MHz.
f = 1990 MHz.
Fig 1. 2-Carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 2. 2-Carrier W-CDMA IMD3 and ACPR as functions
of average load power; typical values
Table 8.
Typical impedance
VDS = 28 V; IDq = 1150 mA; PL(AV) = 33 W; Tcase = 25 °C.
f
ZS
ZL
MHz
2110
2140
2170
Ω
Ω
1.9 − j2.8
1.8 − j2.7
1.7 − j2.6
1.7 − j1.8
1.6 − j1.6
1.5 − j1.4
BLF4G22-130_4G22LS-130_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
4 of 13
BLF4G22-130; BLF4G22LS-130
NXP Semiconductors
UHF power LDMOS transistor
001aag622
001aag623
16
−20
IMD3
(dBc)
−30
(5)
G
p
(dB)
(4)
(3)
(2)
(1)
(5)
(4)
(3)
(2)
(1)
14
−40
−50
−60
−70
12
10
2
3
2
3
1
10
10
10
1
10
10
10
P
(W)
P
(W)
L(PEP)
L(PEP)
(1) IDq = 850 mA
(2) IDq = 975 mA
(3) IDq = 1150 mA
(4) IDq = 1350 mA
(5) IDq = 1550 mA
(1) IDq = 850 mA
(2) IDq = 975 mA
(3) IDq = 1150 mA
(4) IDq = 1350 mA
(5) IDq = 1550 mA
VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz.
VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz.
Fig 3. Two-tone power gain as a function of peak
envelope load power; typical values
Fig 4. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
001aag624
001aag625
11
15
10
2
t
× I
DS
(h × A )
50%
2
G
(dB)
p
10
10
(1)
13
9
8
7
6
10
(2)
10
10
10
11
9
0
80
160
240
80
120
160
200
240
T (°C)
j
P
(W)
L
ton = 8 µs; toff = 1 ms.
(1) PL(1dB) = 174 W (= 52.4 dBm)
(2) PL(3db) = 209 W (= 53.2 dBm)
Fig 5. Pulsed peak power capability; typical values
Fig 6. Time in hours to 50 % cumulative failure (t50%)
due to electromigration as function of junction
temperature
BLF4G22-130_4G22LS-130_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
5 of 13
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C1
C12
C13
V
GG
R1
V
DD
C11
C2
C14
C4
C3
L7
L14
C15
C8 C9 C10
C5
C6
L6
DUT
C7
L1
L10
C16
L11
L13
L2 L3
L12
L4
L5
L8
L9
001aac275
See Table 9 for list of components.
Fig 7. Schematic test circuit for operation at 2.14 GHz
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50 mm
C13
C1
V
R1
GG
C12
C11
C2
C3
C14
C15
C4
L7
L14
C5
C8 C9 C10
75 mm
C6
L6
C16
C7
L1
L2 L3
L10
L11
L13
L12
L4
L5
L8
L9
001aac276
The components are situated on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm. The other side is unetched and
serves as a ground plane.
See Table 9 for list of components.
Fig 8. Component layout for 2.14 GHz test circuit
BLF4G22-130; BLF4G22LS-130
NXP Semiconductors
UHF power LDMOS transistor
Table 9.
Component
C1, C2, C11
C3
List of components (see Figure 7 and Figure 8)
Description
Value
Remarks
tantalum capacitor
10 µF; 35 V
multilayer ceramic chip capacitor 4.7 µF; 25 V
[2]
C4, C10
multilayer ceramic chip capacitor 8.2 pF
C5, C8, C14, C15 multilayer ceramic chip capacitor 1.5 µF; 50 V
[1]
[2]
C6
C7
C9
C12
C13
C16
L1
multilayer ceramic chip capacitor 0.6 pF
multilayer ceramic chip capacitor 4.7 pF
multilayer ceramic chip capacitor 220 nF; 50 V
electrolytic capacitor
tantalum capacitor
220 µF; 63 V
4.7 µF; 50 V
[1]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[3]
multilayer ceramic chip capacitor 7.5 pF
Z0 = 50 Ω
ATC180R
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
SMD resistor
(W × L) 32.3 mm × 1.7 mm
(W × L) 2.2 mm × 1.7 mm
(W × L) 2.3 mm × 4.8 mm
(W × L) 2.4 mm × 8 mm
(W × L) 9.3 mm × 14 mm
(W × L) 4 mm × 1.2 mm
(W × L) 14.5 mm × 1.2 mm
(W × L) 9.3 mm × 16.8 mm
(W × L) 3 mm × 25.8 mm
(W × L) 11 mm × 1.7 mm
(W × L) 9.5 mm × 1.7 mm
(W × L) 3 mm × 3 mm
L2
Z0 = 50 Ω
Z0 = 24 Ω
Z0 = 15 Ω
Z0 = 9.5 Ω
Z0 = 60 Ω
Z0 = 60 Ω
Z0 = 8.2 Ω
Z0 = 5.5 Ω
Z0 = 50 Ω
Z0 = 50 Ω
Z0 = 34 Ω
Z0 = 50 Ω
Z0 = 43 Ω
4.7 Ω; 0.1 W
L3
L4
L5
L6
L7
L8
L9
L10
L11
L12
L13
L14
R1
(W × L) 12.7 mm × 1.7 mm
(W × L) 13.5 mm × 2.1 mm
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm.
BLF4G22-130_4G22LS-130_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
8 of 13
BLF4G22-130; BLF4G22LS-130
NXP Semiconductors
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 9. Package outline SOT502A
BLF4G22-130_4G22LS-130_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
9 of 13
BLF4G22-130; BLF4G22LS-130
NXP Semiconductors
UHF power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
UNIT
1
1
1
2
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
03-01-10
07-05-09
SOT502B
Fig 10. Package outline SOT502B
BLF4G22-130_4G22LS-130_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
10 of 13
BLF4G22-130; BLF4G22LS-130
NXP Semiconductors
UHF power LDMOS transistor
10. Abbreviations
Table 10. Abbreviations
Acronym
3GPP
ACPR
CCDF
CW
Description
Third Generation Partnership Project
Adjacent Channel Power Ratio
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
EDGE
EVM
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Error Vector Magnitude
GSM
Global System for Mobile communications
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
LDMOS
LDMOST
PAR
RF
Radio Frequency
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 11. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF4G22-130_4G22LS-130_1
20070703
Product data sheet
-
-
BLF4G22-130_4G22LS-130_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
11 of 13
BLF4G22-130; BLF4G22LS-130
NXP Semiconductors
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
12.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BLF4G22-130_4G22LS-130_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
12 of 13
BLF4G22-130; BLF4G22LS-130
NXP Semiconductors
UHF power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1
1.2
1.3
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
7.1
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 July 2007
Document identifier: BLF4G22-130_4G22LS-130_1
相关型号：
BLF4G22S-100,112
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 2 PIN, FET RF Power
NXP
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