BLF6G22LS-130/T3 [NXP]
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,34A I(D),SOT-502B;
| 型号： | BLF6G22LS-130/T3 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,34A I(D),SOT-502B |
| 文件： | 总11页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G22LS-130
Power LDMOS transistor
Rev. 01 — 23 May 2008
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
(V)
28
PL(AV)
(W)
Gp
ηD
IMD3
(dBc)
ACPR
(dBc)
−40[1]
(MHz)
(dB)
17
(%)
28.5 −37[1]
2-carrier W-CDMA
2110 to 2170
30
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 1100 mA:
N Average output power = 30 W
N Power gain = 17 dB (typ)
N Efficiency = 28.5 %
N IMD3 = −37 dBc
N ACPR = −40 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22LS-130
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
I RF power amplifiers W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Graphic symbol
1
1
3
2
2
gate
[1]
3
source
2
3
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BLF6G22LS-130
earless flanged LDMOST ceramic package; 2 leads SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
drain current
-
65
−0.5 +13
V
-
34
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
225 °C
-
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Tcase = 80 °C; PL = 30 W
Typ Unit
Rth(j-case) thermal resistance from junction to case
0.43 K/W
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
2 of 11
BLF6G22LS-130
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
65
-
-
V
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 1.4
1.9
2.1
2.4
2.6
V
V
VGSq
gate-source quiescent voltage VDS = 28 V;
ID = 1100 mA
1.6
IDSS
IDSX
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
VGS = VGS(th) + 3.75 V;
DS = 10 V
-
-
5
-
µA
26.5 34
A
V
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 9 A
-
-
-
-
450
-
nA
S
forward transconductance
12
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 6.3 A
0.085 0.135
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
3.15
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 1100 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ
30
Max Unit
PL(AV)
Gp
average output power
-
-
W
power gain
PL(AV) = 30 W
PL(AV) = 30 W
PL(AV) = 30 W
16
-
17
-
dB
dB
%
RLin
ηD
input return loss
drain efficiency
−9
−6
-
25.5 28.5
IMD3
third order intermodulation distortion PL(AV) = 30 W
PL(AV) = 30 W
-
-
−37
−40
−34.5 dBc
−38 dBc
ACPR adjacent channel power ratio
7.1 Ruggedness in class-AB operation
The BLF6G22LS-130 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 1100 mA; PL = 130 W (CW); f = 2170 MHz.
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
3 of 11
BLF6G22LS-130
NXP Semiconductors
Power LDMOS transistor
7.2 One-tone CW
001aai093
60
D
19
η
G
η
D
p
(dB)
(%)
17
40
G
p
15
13
20
0
160
0
40
80
120
P
(W)
L
VDS = 28 V; IDq = 1100 mA; f = 2170 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
typical values
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
4 of 11
BLF6G22LS-130
NXP Semiconductors
Power LDMOS transistor
7.3 Two-tone CW
001aai094
19
60
G
η
D
p
(dB)
(%)
G
p
17
40
η
D
15
13
20
0
160
0
40
80
120
P
(W)
L
VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz; f2 = 2170.05 MHz.
Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values
001aai095
IMD3
001aai096
0
0
IMD
(dBc)
IMD3
(dBc)
−20
−20
IMD5
IMD7
−40
−60
−80
−40
−60
(1)
(2)
(5)
(3)
(4)
0
50
100
150
200
P
250
(W)
0
50
100
150
200
L(PEP)
250
(W)
P
L(PEP)
VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz;
f2 = 2170.05 MHz.
VDS = 28 V; f1 = 2169.95 MHz; f2 = 2170.05 MHz.
(1) IDq = 900 mA
(2) IDq = 1000 mA
(3) IDq = 1100 mA
(4) IDq = 1200 mA
(5) IDq = 1300 mA
Fig 3. Intermodulation distortion as a function of
peak envelope load power; typical values
Fig 4. Third order intermodulation distortion as a
function of peak envelope load power;
typical values
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
5 of 11
BLF6G22LS-130
NXP Semiconductors
Power LDMOS transistor
7.4 2-carrier W-CDMA
001aai098
001aai102
21
40
0
ACPR,
IMD3
(dBc)
G
(dB)
η
D
(%)
p
η
D
19
30
−20
G
p
17
15
13
20
10
0
−40
−60
−80
IMD3
ACPR
0
10
20
30
40
50
0
10
20
30
P
40
(W)
P
(W)
L
L(AV)
VDS = 28 V; IDq = 1100 mA; f1 = 2157.5 MHz;
f2 = 2167.5 MHz; carrier spacing 10 MHz.
VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz;
f2 = 2170.05 MHz.
Fig 5. 2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 6. 2-carrier W-CDMA adjacent channel leakage
ratio and IMD3 as functions of average load
power; typical values
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
6 of 11
BLF6G22LS-130
NXP Semiconductors
Power LDMOS transistor
8. Test information
C17
R1
C16
C4
C5
C6
C7 C8 C9
R2
C1
C15
C2
C3
C13
C14
C10 C11 C12
INPUT PCB V1
OUTPUT PCB V2
001aai108
The striplines are on a Rogers RO4350B Printed-Circuit Board (PCB) with εr = 3.48 and thickness = 0.762 mm.
See Table 8 for list of components.
Fig 7. Component layout for 2110 MHz to 2170 MHz test circuit for 2-carrier W-CDMA
Table 8.
List of components (see Figure 7)
All capacitors should be soldered vertically.
Component Description
Value
Remarks
[1]
[1]
[1]
C1
C2
C3
C4
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
3.6 pF
0.3 pF
1.2 pF
4.7 pF
100 nF
15 pF
TDK C4532X7R1E475M t020U or equivalent
Murata GRM217BR71H104KA11L or equivalent
C5, C7, C10 multilayer ceramic chip capacitor
C6, C8, C11 multilayer ceramic chip capacitor
[1]
C9, C12
C13
C14
C15
C16
C17
R1
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
tantalum capacitor
220 nF
1.3 pF
1.4 pF
24 pF
AVX12065C224K
[1]
[1]
[1]
10 µF
electrolytic capacitor
220 µF; 35 V
4.7 Ω
chip resistor
SMD 0603
SMD 0603
R2
chip resistor
2.7 Ω
[1] American Technical Ceramics type 100B or capacitor of same quality.
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
7 of 11
BLF6G22LS-130
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT
1
1
1
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
03-01-10
07-05-09
SOT502B
Fig 8. Package outline SOT502B
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
8 of 11
BLF6G22LS-130
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Description
Third Generation Partnership Project
Acronym
3GPP
CCDF
CW
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
LDMOS
LDMOST
PAR
Dedicated Physical CHannel
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
PDPCH
RF
transmission Power of the Dedicated Physical CHannel
Radio Frequency
SMD
Surface Mounted Device
VSWR
W-CDMA
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 10. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BLF6G22LS-130_1
20080523
Product data sheet
-
-
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
9 of 11
BLF6G22LS-130
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
10 of 11
BLF6G22LS-130
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
7.1
7.2
7.3
7.4
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 May 2008
Document identifier: BLF6G22LS-130_1
相关型号：
©2020 ICPDF网 联系我们和版权申明