BLF6G22LS-40P,112 [NXP]
BLF6G22LS-40P;
| 型号： | BLF6G22LS-40P,112 |
| 厂家： | 
NXP |
| 描述： | BLF6G22LS-40P |
| 文件： | 总16页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G22L-40P;
BLF6G22LS-40P
Power LDMOS transistor
Rev. 1 — 22 September 2011
Product data sheet
1. Product profile
1.1 General description
LDMOS power transistor for base station applications at frequencies from 2110 MHz to
2170 MHz and 1805 MHz to 1880 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
1-carrier W-CDMA
f
IDq
VDS
(V)
28
PL(AV)
(W)
13.5
5
Gp
D
ACPR
(dBc)
30 [2]
(MHz)
(mA)
(dB)
19
(%)
2110 to 2170
410
30
1805 to 1880 [1] 410
2110 to 2170 410
1805 to 1880 [1] 410
28
20.3
19
18.3 34.9 [2]
32
37 [3]
18.0 42.3 [3]
28
15
28
5
20.5
[1] The performance is tested on the Class AB demo board as depicted in Figure 11.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[3] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency band
RF driver amplifier in the 1805 MHz to 1880 MHz frequency band
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLF6G22L-40P (SOT1121A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
3
5
4
5
[1]
2
sym117
BLF6G22LS-40P (SOT1121B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
2
1
5
3
5
4
[1]
3
4
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF6G22L-40P
BLF6G22LS-40P
-
flanged LDMOST ceramic package; 2 mounting holes; SOT1121A
4 leads
-
earless flanged LDMOST ceramic package; 4 leads
SOT1121B
4. Limiting values
Table 4.
Limiting values (2 sections combined)
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
0.5 +13
V
-
16
A
Tstg
Tj
storage temperature
junction temperature
65
+150 C
200 C
-
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
2 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
0.7 K/W
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 40 W
6. Characteristics
Table 6.
Characteristics (per section)
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.4 mA
65
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 40 mA
VGS = 0 V; VDS = 28 V
1.4 1.9
2.4
2
V
-
-
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
6
7
-
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 2.0 A
-
-
200 nA
forward transconductance
1.8 2.9
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 1.4 A
0.14 0.37 0.57
7. Application information
Table 7.
Application information (2 sections combined)
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 410 mA; Tcase = 25 C; in a class-AB production test circuit.
Symbol
Gp
Parameter
Conditions
Min Typ Max Unit
[1]
[1]
[1]
[1]
[1]
power gain
PL(AV) = 13.5 W
PL(AV) = 13.5 W
PL(AV) = 13.5 W
17.8 19
15 9
26.5 30
-
dB
dB
%
RLin
D
input return loss
drain efficiency
-
-
ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 13.5 W
ACPR10M adjacent channel power ratio (10 MHz) PL(AV) = 13.5 W
-
-
30 27 dBc
39 36 dBc
[1] In production, all testing are only performed at 2110 MHz to 2170 MHz frequency band.
7.1 Ruggedness in class-AB operation
The BLF6G22L-40P and BLF6G22LS-40P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS = 28 V; IDq = 410 mA; PL = 40 W (CW); f = 2110 MHz.
The BLF6G22L-40P and BLF6G22LS-40P are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 410 mA; PL = 40 W (CW pulse, 10 %); f = 1842 MHz.
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
3 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
7.2 CW
Power LDMOS transistor
aaa-000328
30
60
G
η
D
(%)
p
(2) (3)
(1)
(dB)
20
40
G
p
10
0
20
0
(1) (2) (3)
η
D
28
36
44
52
P
(dBm)
L
VDS = 28 V; IDq = 410 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 1. Power gain and drain efficiency as function of load power; typical values
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
4 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
7.3 IS-95
Single carrier IS-95; PAR = 9.7 dB at 0.01 % probability on the CCDF.
aaa-000329
aaa-000330
22
50
-20
ACPR
-20
G
η
D
p
(dB)
(1) (2) (3)
(%)
ACPR
(dBc)
885
1980
(dBc)
20
40
-40
-60
-80
-40
-60
-80
G
p
ACPR
885
18
16
14
12
30
20
10
0
(1) (2)
(3)
η
D
ACPR
1980
(1) (2) (3)
(1) (2) (3)
40
28
32
36
40
44
48
(dBm)
28
32
36
44 48
P (dBm)
L
P
L
VDS = 28 V; IDq = 410 mA.
VDS = 28 V; IDq = 410 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 2. Single carrier IS-95 power gain and drain
efficiency as function of output power; typical
values
Fig 3. Single carrier IS-95 adjacent channel power
ratio as a function of output power;
typical values
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
5 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
7.4 1-carrier W-CDMA
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
aaa-000331
aaa-000332
22
72
-10
ACPR
-10
G
p
G
η
ACPR
10M
(dBc)
p
(dB)
D
5M
(%)
(dBc)
ACPR
5M
18
48
-30
-50
-70
-30
-50
-70
(2) (3)
(2) (3)
(1)
(1)
(2) (3)
(1)
14
10
24
0
η
D
(1)
(2) (3)
ACPR
44
10M
28
32
36
40
44
48
(dBm)
28
32
36
40
48
(dBm)
P
P
L
L
VDS = 28 V; IDq = 410 mA.
VDS = 28 V; IDq = 410 mA.
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
Fig 4. 1-carrier W-CDMA power gain and drain
efficiency as function of output power; typical
values
Fig 5. 1-carrier W-CDMA adjacent channel power
ratio as a function of output power;
typical values
aaa-000333
8
PAR
(dB)
(1)
(2)
(3)
6
4
2
0
28
32
36
40
44
48
(dBm)
P
L
VDS = 28 V; IDq = 410 mA.
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
Fig 6. 1-carrier W-CDMA power gain and drain efficiency as function of output power; typical values
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
6 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
7.5 2-carrier W-CDMA
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
aaa-000334
aaa-000335
35
70
-10
ACPR
-10
G
η
D
p
(dB)
(%)
ACPR
(dBc)
30
60
5M
10M
(dBc)
25
20
15
10
5
50
40
30
20
10
0
ACPR
5M
-30
-50
-70
-30
-50
-70
G
p
(2) (3)
(1)
(2) (3)
(1)
ACPR
10M
η
D
(1)
(2) (3)
(1)
(2) (3)
0
28
32
36
40
44
48
(dBm)
28
32
36
40
44 48
P (dBm)
L
P
L
VDS = 28 V; IDq = 410 mA.
VDS = 28 V; IDq = 410 mA.
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
Fig 7. 2-carrier W-CDMA power gain and drain
efficiency as function of output power; typical
values
Fig 8. 2-carrier W-CDMA adjacent channel power
ratio as a function of output power;
typical values
aaa-000336
10
PAR
(dB)
8
(1) (2) (3)
6
4
2
0
28
32
36
40
44
48
(dBm)
P
L
VDS = 28 V; IDq = 410 mA.
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
Fig 9. 2-carrier W-CDMA peak-to-average power ratio as function of output power; typical values
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
7 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
8. Test information
50.0 mm
50.0 mm
C3
R1
C1
C13
C9
C11
C15
C6
C5
C8
60.0 mm
C14
C10
C12
R2
C2
C4
aaa-000337
Printed-Circuit Board (PCB): Rogers RO4350; r = 3.5 F/m; thickness = 0.762 mm;
thickness copper plating = 35 m.
The vias can be as a reference to place components.
The above layout shows the test circuit used to measure the devices in production. A more
appropriate application demonstration for specific customer needs can be provided.
See Table 8 for list of components.
Fig 10. Component layout
Table 8.
List of components
See Figure 10 for component layout.
Component
Description
Value
Remarks
[1]
[2]
[1]
C1, C2, C9,
C10
multilayer ceramic chip capacitor
68 pF
C3, C4, C11,
C12
multilayer ceramic chip capacitor
820 pF
C5, C8
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
4.7 pF
C6, C14, C15
C13
10 F
TDK
470 F; 63 V
12
R1, R2
chip resistor
Philips 1206
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
8 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
U1
L1
R5
R10
C18
R1
D1
R6
R4
C1
R3
R13
L2
R2
Q1
C2
R7
R9
C3
C5
C4
C8
R8
C6
C12 C13 C14
VR1
R11
R12
C19
C17
C7
C15 C16
C20
C9 C10 C11
aaa-000656
Printed-Circuit Board (PCB): Rogers RO4350; r = 3.5 F/m; thickness = 0.762 mm;
thickness copper plating = 35 m.
The vias can be as a reference to place components.
The above layout shows the test circuit used to measure the devices in production. A more
appropriate application demonstration for specific customer needs can be provided.
See Table 9 for list of components.
Fig 11. 1.8 GHz Demo board layout
Table 9.
List of components
See Figure 11 for component layout.
Component
Description
Value
Remarks
Murata
Murata
ATC
C1, C2, C5, C8
multilayer ceramic chip capacitor
100 nF
1 F
C3, C4, C11, C14 multilayer ceramic chip capacitor
C6
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
47 pF
C7
10 pF
ATC
C9, C12
C10, C13
C15, C16
C17
12 pF
ATC
330 pF
1.5 pF
10 pF
Murata
ATC
ATC
C18
2200 F, 50 V
1 pF
Panasonic
ATC
C19, C20
multilayer ceramic chip capacitor
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
9 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
Table 9.
List of components
See Figure 11 for component layout.
Component
L1, L2
R1
Description
ferrite bead
Value
5 A
Remarks
Fair Rite
chip resistor
chip resistor
chip resistor
chip resistor
chip resistor
chip resistor
chip resistor
potentiometer
voltage regulator
500
1.1 k
432
9.1
2 k
Vishay Dale
Vishay Dale
Vishay Dale
Vishay Dale
Vishay Dale
Vishay Dale
Vishay Dale
Bourns
R2, R5
R3, R6
R4, R11
R9
R10
75
R12
1.5
200
VR1
U1
NJR
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
10 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
SOT1121A
D
A
F
D
U
1
B
C
1
q
H
1
c
1
2
p
U
2
E
1
H
E
5
A
w
1
A
B
3
4
b
w
2
C
Q
e
0
5
10 mm
p
scale
Dimensions
(1)
(2)
Unit
A
b
c
D
D
e
E
E
1
F
H
H
1
Q
q
U
1
U
w
1
w
2
1
2
max 4.75 3.94 0.18 20.02 19.96
mm nom
9.53 9.53 1.14 19.94 12.83 3.38 1.70
34.16 9.91
8.89
27.94
1.1
0.25 0.51
0.01 0.02
min 3.45 3.68 0.10 19.61 19.66
9.27 9.27 0.89 18.92 12.57 3.12 1.45
0.375 0.375 0.045 0.785 0.505 0.133 0.067
33.91 9.65
1.345 0.39
max 0.187 0.155 0.007 0.788 0.786
inches nom
min 0.136 0.145 0.004 0.772 0.774
0.35
0.365 0.365 0.035 0.745 0.495 0.123 0.057
1.335 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121a_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
10-02-02
SOT1121A
Fig 12. Package outline SOT1121A
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
11 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 4 leads
SOT1121B
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
U
2
E
1
H
E
3
4
b
Q
w
3
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
e
E
E
1
F
H
H
1
Q
U
1
U
w
w
3
2
2
max 4.75 3.94 0.18 20.02 19.96
mm nom
9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91
8.89
0.51 0.25
0.02 0.01
min 3.45 3.68 0.08 19.61 19.66
9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65
0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39
max 0.187 0.155 0.007 0.788 0.786
inches nom
min 0.136 0.145 0.003 0.772 0.774
0.35
0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
sot1121b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
09-10-12
09-12-14
SOT1121B
Fig 13. Package outline SOT1121B
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
12 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 10. Abbreviations
Acronym
Description
3GPP
CCDF
CW
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical CHannel
ElectroStatic Discharge
IS-95
Interim Standard 95
LDMOS
LDMOST
PAR
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
RF
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 11. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF6G22L-40P_6G22LS-40P v.1
20110922
Product data sheet
-
-
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
13 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
14 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G22L-40P_6G22LS-40P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 September 2011
15 of 16
BLF6G22L-40P; BLF6G22LS-40P
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
IS-95. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
7.1
7.2
7.3
7.4
7.5
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 September 2011
Document identifier: BLF6G22L-40P_6G22LS-40P
相关型号：
BLF6G24-12
TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power
NXP
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