BLF6G22LS-180RN [NXP]
Power LDMOS transistor; 功率LDMOS晶体管
| 型号： | BLF6G22LS-180RN |
| 厂家： | 
NXP |
| 描述： | Power LDMOS transistor |
| 文件： | 总11页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G22-180RN;
BLF6G22LS-180RN
Power LDMOS transistor
Rev. 01 — 20 November 2008
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS PL(AV) Gp
ηD
IMD3
(dBc)
−38[1]
ACPR
(dBc)
−42[1]
(MHz)
(V)
(W)
(dB)
(%)
25
2-carrier W-CDMA
2110 to 2170
30
40
16.0
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 30 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 16.0 dB
N Efficiency = 25 %
N IMD3 = −38 dBc
N ACPR = −42 dBc
I Easy power control
I Integrated ESD protection
I Enhanced ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use
BLF6G22(LS)-180RN
NXP Semiconductors
Power LDMOS transistor
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pin
BLF6G22-180RN (SOT502A)
Pinning
Description
Simplified outline
Graphic symbol
1
2
3
drain
gate
1
1
3
2
[1]
source
2
3
sym112
BLF6G22LS-180RN (SOT502B)
1
2
3
drain
gate
1
3
2
1
[1]
source
2
3
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF6G22-180RN
-
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
BLF6G22LS-180RN
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5 +13
V
-
49
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
225 °C
-
BLF6G22-180RN_22LS-180RN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2008
2 of 11
BLF6G22(LS)-180RN
NXP Semiconductors
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Rth(j-case)
Thermal characteristics
Parameter
Conditions
Type
Typ
0.50
0.37
Unit
K/W
K/W
thermal resistance from
junction to case
Tcase = 80 °C;
PL = 40 W
BLF6G22-180RN
BLF6G22LS-180RN
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.9 mA
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.4
2.0
2.0
-
2.4
2.5
5
V
gate-source quiescent voltage VDS = 28 V; ID = 1.62 A
1.5
-
V
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
µA
A
IDSX
VGS = VGS(th) + 3.75 V;
40
45
-
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 13 V; VDS = 0 V
VDS = 10 V; ID = 13.5 A
-
-
-
-
450
nA
S
forward transconductance
19.5
0.06
-
-
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 9.45 A
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 30 V;
f = 1 MHz
-
3.3
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR = 7 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 30 V; IDq = 1400 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ Max
40
Unit
W
PL(AV)
Gp
average output power
-
-
power gain
PL(AV) = 40 W
PL(AV) = 40 W
PL(AV) = 40 W
PL(AV) = 40 W
PL(AV) = 40 W
15.0
16.0 -
dB
dB
%
RLin
ηD
input return loss
-
−11 −8
drain efficiency
22
-
25
-
IMD3
ACPR
third order intermodulation distortion
adjacent channel power ratio
−38 −34.5 dBc
−42 −39 dBc
-
7.1 Ruggedness in class-AB operation
The BLF6G22-180RN and BLF6G22LS-180RN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 30 V; IDq = 1400 mA; PL = 180 W (CW); f = 2170 MHz.
BLF6G22-180RN_22LS-180RN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2008
3 of 11
BLF6G22(LS)-180RN
NXP Semiconductors
Power LDMOS transistor
7.2 One-tone CW
001aai641
60
17
G
η
D
p
(dB)
(%)
G
p
16
40
η
D
15
14
20
0
180
0
60
120
P
(W)
L
VDS = 30 V; IDq = 1400 mA; f = 2140 MHz.
Fig 1. One-tone CW power gain and drain efficiency as function of load power;
typical values
7.3 Two-tone CW
001aai642
001aai643
17
60
−20
IMD
(dBc)
−30
G
η
D
(%)
p
(dB)
G
p
16
40
−40
−50
−60
−70
IMD3
IMD5
IMD7
η
D
15
14
20
0
180
0
60
120
0
20
40
60
80
P
100
(W)
P
(W)
L(PEP)
L(PEP)
VDS = 30 V; IDq = 1400 mA; f = 2140 MHz.
VDS = 30 V; IDq = 1400 mA; f = 2140 MHz.
Fig 2. Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
Fig 3. Two-tone CW intermodulation distortion as a
function of peak envelope load power; typical
values
BLF6G22-180RN_22LS-180RN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2008
4 of 11
BLF6G22(LS)-180RN
NXP Semiconductors
Power LDMOS transistor
7.4 2-carrier W-CDMA
001aai644
001aai645
17
60
−30
IMD3
ACPR
(dBc)
−35
G
(dB)
η
D
(%)
p
G
p
IMD3
16
40
−40
−45
−50
−55
ACPR
η
D
15
14
20
0
0
20
40
60
0
20
40
60
P
(W)
P
(W)
L(AV)
L(AV)
VDS = 30 V; IDq = 1400 mA; f = 2140 MHz (±5 MHz);
VDS = 30 V; IDq = 1400 mA; f = 2140 MHz (±5 MHz);
carrier spacing 10 MHz.
carrier spacing 10 MHz.
Fig 4. 2-carrier W-CDMA power gain and drain
efficiency as function of average load power;
typical values
Fig 5. 2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as function of average load power; typical
values
8. Test information
V
GG
C7
R2
C6
C8
V
DD
C5
C4
C20
R1
C3
C2
C13
C14
C15
C16
C1
C9
input
output
C10
C11
C12
C17
C18
C19
001aai646
The drawing is not to scale.
Fig 6. Test circuit for operation at 2200 MHz
BLF6G22-180RN_22LS-180RN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2008
5 of 11
BLF6G22(LS)-180RN
NXP Semiconductors
Power LDMOS transistor
R2
C20
C8
C7
C15
C6
C5
C4
C3
C16
C13 C14
R1
C2
C11
C1
C9
C10
C17
C18
C19
C12
001aai647
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5
and thickness = 0.76 mm.
See Table 8 for list of components.
The drawing is not to scale.
Fig 7. Component layout
Table 8.
List of components (see Figure 6 and Figure 7)
The Printed-Circuit Board (PCB) used is a double copper-clad Taconic RF35 with εr = 3.5 and thickness = 0.76 mm.
Component
Description
Value
Remarks
[1]
[1]
C1, C3, C12, C13
multilayer ceramic chip capacitor 13 pF
multilayer ceramic chip capacitor 1.4 pF
multilayer ceramic chip capacitor 220 nF
multilayer ceramic chip capacitor 100 nF
multilayer ceramic chip capacitor 10 µF
multilayer ceramic chip capacitor 12 pF
multilayer ceramic chip capacitor 1.1 pF
multilayer ceramic chip capacitor 0.7 pF
multilayer ceramic chip capacitor 1.5 µF
multilayer ceramic chip capacitor 10 µF; 50 V
ATC 100B or capacitor of same quality
ATC 100B or capacitor of same quality
Vishay or capacitor of same quality
Vishay or capacitor of same quality
C2
C4, C5, C14, C17
C6, C7
C8
[1]
[1]
[1]
C9
ATC 100B or capacitor of same quality
ATC 100B or capacitor of same quality
ATC 100B or capacitor of same quality
C10
C11
C15, C18
C16, C19
C20
TDK or capacitor of same quality
electrolytic capacitor
ferrite SMD bead
SMD resistor
220 µF; 63 V
L1
-
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
R1
2.7 Ω
6.8 Ω
R2, R3
SMD resistor
[1] Solder vertically.
BLF6G22-180RN_22LS-180RN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2008
6 of 11
BLF6G22(LS)-180RN
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 8. Package outline SOT502A
BLF6G22-180RN_22LS-180RN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2008
7 of 11
BLF6G22(LS)-180RN
NXP Semiconductors
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT
1
1
1
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
03-01-10
07-05-09
SOT502B
Fig 9. Package outline SOT502B
BLF6G22-180RN_22LS-180RN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2008
8 of 11
BLF6G22(LS)-180RN
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Description
Acronym
3GPP
CCDF
CDMA
CW
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
DPCH
EDGE
GSM
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
LDMOS
LDMOST
PAR
PDPCH
RF
transmission Power of the Dedicated Physical CHannel
Radio Frequency
VSWR
W-CDMA
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF6G22-180RN_22LS-180RN_1
20081120
Product data sheet
-
-
BLF6G22-180RN_22LS-180RN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2008
9 of 11
BLF6G22(LS)-180RN
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G22-180RN_22LS-180RN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2008
10 of 11
BLF6G22(LS)-180RN
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
7.1
7.2
7.3
7.4
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 November 2008
Document identifier: BLF6G22-180RN_22LS-180RN_1
相关型号：
BLF6G24-12
TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power
NXP
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