BLF6G22LS-75 [NXP]
Power LDMOS transistor; 功率LDMOS晶体管
| 型号： | BLF6G22LS-75 |
| 厂家： | 
NXP |
| 描述： | Power LDMOS transistor |
| 文件： | 总10页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF6G22LS-75
Power LDMOS transistor
Rev. 01 — 8 February 2008
Preliminary data sheet
1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
(V)
28
PL(AV)
(W)
Gp
ηD
IMD3
(dBc)
ACPR
(dBc)
(MHz)
(dB)
18.7
(%)
2-carrier W-CDMA
2110 to 2170
17
30.5 −37.5[1] −41.5[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an IDq of 690 mA:
N Average output power = 17 W
N Gain = 18.7 dB
N Efficiency = 30.5 %
N IMD3 = −37.5 dBc
N ACPR = −41.5 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Symbol
1
3
1
3
2
2
gate
[1]
3
source
2
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
SOT502B
BLF6G22LS-75
-
earless flanged LDMOST ceramic package; 2 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
−0.5 +13
V
-
18
A
Tstg
Tj
storage temperature
junction temperature
−65
+150 °C
225 °C
-
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Tcase = 80 °C; PL = 17 W
Typ Unit
Rth(j-case) thermal resistance from junction to case
0.75 K/W
BLF6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 8 February 2008
2 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage VDS = 10 V; ID = 100 mA 1.4
gate-source quiescent voltage VDS = 28 V; ID = 690 mA 1.75
2
2.4
2.75
3
V
2.16
-
V
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
µA
A
IDSX
VGS = VGS(th) + 3.75 V;
14.9
18.7
-
VDS = 10 V
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 5 A
-
-
-
-
300
-
nA
S
forward transconductance
7.3
0.14
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 3.5 A
0.24
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
1.5
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 690 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ
18.7
−9.5
30.5
Max
Unit
dB
Gp
power gain
PL(AV) = 17 W
PL(AV) = 17 W
PL(AV) = 17 W
17.6
-
IRL
input return loss
drain efficiency
-
−6.5
dB
ηD
28
-
-
%
IMD3
ACPR
third order intermodulation distortion PL(AV) = 17 W
adjacent channel power ratio PL(AV) = 17 W
−37.5 −34
dBc
-
−41.5 −38.5 dBc
7.1 Ruggedness in class-AB operation
The BLF6G22LS-75 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 690 mA; PL = 75 W (CW); f = 2170 MHz.
BLF6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 8 February 2008
3 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
001aah586
70
20
G
(dB)
η
D
(%)
p
G
p
19
55
18
17
16
40
25
10
η
D
0
20
40
60
80
100
(W)
P
L
VDS = 28 V; IDq = 690 mA; f = 2140 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical
values
001aah567
001aah568
IMD3
20
60
−15
G
η
(%)
IMD
(dBc)
p
(dB)
D
G
p
19
45
−30
IMD5
IMD7
η
D
18
17
16
30
15
0
−45
−60
−75
0
20
40
60
80
100
120
L(PEP)
140
(W)
0
20
40
60
80
100
120
L(PEP)
140
(W)
P
P
VDS = 28 V; IDq = 690 mA; f1 = 2140 MHz;
f2 = 2140.1 MHz.
VDS = 28 V; IDq = 690 mA; f1 = 2140 MHz;
f2 = 2140.1 MHz.
Fig 2. Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
Fig 3. Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
BLF6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 8 February 2008
4 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
001aah569
001aah570
IMD3
20
60
−25
IMD3,
ACPR
(dBc)
G
(dB)
η
D
(%)
p
19
40
−35
−45
−55
ACPR
G
p
η
D
18
17
20
0
0
10
20
30
P
40
(W)
0
10
20
30
40
(W)
P
L(AV)
L(AV)
VDS = 28 V; IDq = 690 mA; f1 = 2135 MHz;
f2 = 2145 MHz; carrier spacing 10 MHz.
VDS = 28 V; IDq = 690 mA; f1 = 2135 MHz;
f2 = 2145 MHz; carrier spacing 10 MHz.
Fig 4. 2-carrier W-CDMA power gain and drain
Fig 5. 2-carrier W-CDMA adjacent power channel ratio
and third order intermodulation distortion as
functions of average load power; typical values
efficiency as functions of average load power;
typical values
8. Test information
R1
V
V
GG
DD
C22
C5
C6
C7
C23
C10 C11 C12 C13
C14
R2
C8
C9
C4
C1
C21
C2
C3
C20
INPUT
OUTPUT
C15 C16 C17 C18 C19
001aah571
The drawing is not to scale.
Fig 6. Test circuit for operation at 800 MHz
BLF6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 8 February 2008
5 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
C22
C23
R1
C5
C10
C6
C7
C8
C9
R2
C11 C13
C12
C14
C4
C1
C20
C21
C3
C2
C17
C19
C16 C18
C15
001aah572
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and
thickness = 0.76 mm. The drawing is not to scale.
See Table 8 for list of components.
Fig 7. Component layout
Table 8.
List of components (see Figure 6 and Figure 7)
Description
Component
C1
Value
Remarks
[1]
[1]
[1]
multilayer ceramic chip capacitor 5.6 pF
multilayer ceramic chip capacitor 0.5 pF
multilayer ceramic chip capacitor 0.6 pF
C2, C3
C4
C5, C6, C13, C14, C18, C19 multilayer ceramic chip capacitor 1.5 µF
TDK 1206 or capacitor of same quality
Murata 0603 or capacitor of same quality
C7, C8, C11, C16
multilayer ceramic chip capacitor 100 nF
multilayer ceramic chip capacitor 15 pF
multilayer ceramic chip capacitor 220 nF
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 0.7 pF
multilayer ceramic chip capacitor 20 pF
[1]
C9
C10, C15
C12, C17
C20
AVX 0805 or capacitor of same quality
[1]
[1]
[1]
C21
C22
tantalum capacitor
electrolytic capacitor
SMD resistor
10 µF; 35 V
C23
220 µF; 35 V
3.3 Ω
R1
R2
SMD resistor
5.1 Ω
[1] American Technical Ceramics type 100B or capacitor of same quality.
BLF6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 8 February 2008
6 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
2
w
2
UNIT
1
1
1
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
ISSUE DATE
PROJECTION
OUTLINE
VERSION
IEC
JEDEC
JEITA
03-01-10
07-05-09
SOT502B
Fig 8. Package outline SOT502B
BLF6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 8 February 2008
7 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Description
Third Generation Partnership Project
Acronym
3GPP
CCDF
CW
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
LDMOS
LDMOST
PAR
Dedicated Physical CHannel
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
PDPCH
RF
transmission Power of the Dedicated Physical CHannel
Radio Frequency
VSWR
W-CDMA
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 10. Revision history
Document ID
Release date
20080208
Data sheet status
Change notice
Supersedes
BLF6G22LS-75_1
Preliminary data sheet
-
-
BLF6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 8 February 2008
8 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BLF6G22LS-75_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 8 February 2008
9 of 10
BLF6G22LS-75
NXP Semiconductors
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
7.1
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 February 2008
Document identifier: BLF6G22LS-75_1
相关型号：
BLF6G24-12
TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power
NXP
©2020 ICPDF网 联系我们和版权申明