BLS2731-10,114 [NXP]
TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power;
| 型号： | BLS2731-10,114 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power 局域网 放大器 CD 晶体管 |
| 文件： | 总12页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLS2731-10
Microwave power transistor
1998 Nov 25
Product specification
Supersedes data of 1998 Mar 06
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-10
FEATURES
PINNING - SOT445C
PIN
• Suitable for short and medium pulse applications
DESCRIPTION
• Internal input and output matching networks for an easy
circuit design
1
2
3
collector
emitter
• Emitter ballasting resistors improve ruggedness
• Gold metallization ensures excellent reliability
base; connected to flange
• Interdigitated emitter-base structure provides high
emitter efficiency
• Multicell geometry improves power sharing and reduces
thermal resistance.
1
handbook, halfpage
APPLICATIONS
• Common base class-C pulsed power amplifier for radar
3
applications in the 2.7 to 3.1 GHz band.
2
Top view
MBK132
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445C) with the common base connected to the
flange.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common base class-C test circuit.
f
VCB
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(GHz)
Pulsed class-C
2.7 to 3.1
40
12.5
typ. 10
typ. 45
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Nov 25
2
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
75
UNIT
VCBO
VCES
VEBO
ICM
collector-base voltage
collector-emitter voltage
emitter-base voltage
open emitter
RBE = 0
−
−
−
−
−
V
V
V
A
75
open collector
2
peak collector current
total power dissipation
storage temperature
tp ≤ 100 µs; δ ≤ 10%
1.5
145
+200
200
235
Ptot
tp = 100 µs; δ = 10%; Tmb = 25 °C
W
Tstg
Tj
−65
−
°C
°C
°C
operating junction temperature
soldering temperature
Tsld
up to 0.2 mm from ceramic cap; t ≤ 10 s
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Zth j-h
thermal impedance from junction to heatsink
tp = 100 µs; δ = 10%; note 1 1.2
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
V(BR)CES
ICBO
collector-base breakdown voltage
IC = 2.5 mA; open emitter 75
−
−
−
−
−
−
−
−
V
collector-emitter breakdown voltage IC = 2.5 mA; VBE = 0
75
−
V
collector leakage current
collector leakage current
emitter leakage current
DC current gain
VCB = 40 V; IE = 0
VCE = 40 V; VBE = 0
VEB = 1.5 V; IC = 0
VCE = 5 V; IC = 0.25 A
0.3
0.5
0.1
−
mA
mA
mA
ICES
−
IEBO
−
hFE
40
−
Cc
collector capacitance (die only)
VCE = 1 V; IE = ie = 0;
f = 1 MHz
10
−
pF
1998 Nov 25
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-10
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common-base test circuit.
f
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
MODE OF OPERATION
(GHz)
Class-C; tp = 100 µs; δ = 10%
2.7 to 3.1
40
≥10
≥9
≥35
typ. 12.5
typ. 10
typ. 45
MDA228
MDA227
16
60
handbook, halfpage
handbook, halfpage
G
p
(dB)
(1)
(2)
(3)
η
C
(1)
(2)
(%)
12
40
(3)
8
4
0
20
0
0
0
4
8
12
4
8
12
P
(W)
P
(W)
L
L
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 2.7 GHz.
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 2.7 GHz.
(2) f = 2.9 GHz.
(2) f = 3.1 GHz.
(3) f = 3.1 GHz.
(3) f = 2.9 GHz.
Fig.2 Power gain as a function of load power;
typical values.
Fig.3 Collector efficiency as a function of load
power; typical values.
1998 Nov 25
4
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-10
MDA229
MDA230
16
80
12
handbook, halfpage
handbook, halfpage
(1)
(2)
(3)
η
G
p
(dB)
C
P
L
(W)
(%)
12
60
G
p
8
η
C
8
4
40
20
0
4
0
0
0
2.7
2.8
2.9
3
3.1
0.4
0.8
1.2
P
(W)
D
f (GHz)
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 2.7 GHz.
(2) f = 2.9 GHz.
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(3) f = 3.1 GHz.
Fig.4 Power gain and efficiency as functions of
frequency; typical values.
Fig.5 Load power as a function of drive power;
typical values.
MDA231
MDA232
20
20
handbook, halfpage
x
handbook, halfpage
Z
i
Z
i
L
(Ω)
(Ω)
16
16
r
R
L
i
12
8
12
8
X
L
4
4
0
2.6
0
2.6
2.8
3
3.2
2.8
3
3.2
f (GHz)
f (GHz)
VCB = 40 V; class-C; PL = 10 W.
VCB = 40 V; class-C; PL = 10 W.
Fig.6 Input impedance as function of frequency
(series components); typical values.
Fig.7 Load impedance as function of frequency
(series components); typical values.
1998 Nov 25
5
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-10
30
30
40
C2
C3
C4
output
50 Ω
input
50 Ω
C1
C5
MGR729
Dimensions in mm.
The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
The striplines are on double-clad printed-circuit board with Duroid dielectric (εr = 2.2); thickness = 0.38 mm.
Fig.8 Component layout for 2.7 to 3.1 GHz class-C test circuit.
1998 Nov 25
6
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-10
List of components
COMPONENT
DESCRIPTION
VALUE
C1
C2
C3
C4
C5
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 2
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 3
Tekelec trimmer type 37281SL
0.7 nF
1 nF
10 pF
150 pF
0.4 to 2.5 pF
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 200A or capacitor of same quality.
3. American Technical Ceramics type 700A or capacitor of same quality.
1998 Nov 25
7
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-10
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
SOT445C
D
A
F
3
D
1
D
2
U
1
B
q
c
C
1
H
U
E
E
1
E
2
2
w
p
M
A
A B
1
2
w
b
M
C
Q
2
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
D
1
D
2
E
E
E
2
F
H
p
Q
q
U
U
w
w
2
1
1
2
1
5.57
4.70
3.35 3.33
3.05 3.03
20.47 5.18
20.17 4.98
3.15 0.15
2.95 0.09
8.13
7.87
7.65
7.35
8.15 4.20
7.85 3.93
4.25
3.95
5.31
5.01
1.82 15.84
1.22 14.64
mm
14.22
0.51
1.02
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT445C
97-05-23
1998 Nov 25
8
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-10
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Nov 25
9
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-10
NOTES
1998 Nov 25
10
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-10
NOTES
1998 Nov 25
11
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© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/04/pp12
Date of release: 1998 Nov 25
Document order number: 9397 750 04721
相关型号：
BLS2731-10TRAY
TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power
NXP
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