BLS2731-110_技术文档

DISCRETE SEMICONDUCTORS

DATA SHEET

BLS2731-110

Microwave power transistor

Product speciﬁcation

1998 Jan 30

Supersedes data of 1997 Nov 05

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS2731-110

FEATURES

PINNING - SOT423A

• Suitable for short and medium pulse applications

DESCRIPTION

• Internal input and output matching networks for an easy

circuit design

1

2

3

collector

emitter

• Emitter ballasting resistors improve ruggedness

• Gold metallization ensures excellent reliability

base; connected to ﬂange

• Interdigitated emitter-base structure provides high

emitter efficiency

• Multicell geometry improves power sharing and reduces

thermal resistance.

1

dbook, halfpage

APPLICATIONS

• Common base class-C pulsed power amplifiers for radar

3

applications in the 2.7 to 3.1 GHz band.

2

MBK052

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a 2-lead rectangular flange package with a ceramic cap

(SOT423A) with the common base connected to the

flange.

Fig.1 Simplified outline.

QUICK REFERENCE DATA

RF performance at T_h= 25 °C in a common base class-C test circuit.

f

V_CB

(V)

P_L

(W)

G_p

(dB)

η_C

(%)

MODE OF OPERATION

(GHz)

Pulsed class-C

2.7 to 3.1

40

>110

>7

>35

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1998 Jan 30

2

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS2731-110

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

75

UNIT

V_CBO

V_CES

V_EBO

I_CM

collector-base voltage

collector-emitter voltage

emitter-base voltage

open emitter

R_BE= 0

−

V

75

V

open collector

2

V

peak collector current

total power dissipation

storage temperature

t_p≤ 100 µs; δ ≤ 10%

12

A

P_tot

t_p= 100 µs; δ = 10%; T_mb= 25 °C

500

+200

200

235

W

°C

T_stg

T_j

−65

−

operating junction temperature

soldering temperature

T_sld

up to 0.2 mm from ceramic cap; t ≤ 10 s

−

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

thermal impedance from junction to heatsink

CONDITIONS

VALUE UNIT

Z_{th j-h}

t_p= 100 µs; δ = 10%; note 1

0.24

K/W

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

collector-base breakdown voltage

collector-emitter breakdown voltage

collector leakage current

emitter leakage current

CONDITIONS

I_C= 30 mA; open emitter

I_C= 30 mA; V_BE= 0

V_CB= 40 V; I_E= 0

MIN.

MAX.

UNIT

V_(BR)CBO

V_(BR)CES

I_CBO

75

−

V

−

V

3

mA

I_CES

V_CE= 40 V; V_BE= 0

V_EB= 1.5 V; I_C= 0

−

6

I_EBO

−

0.6

100

h_FE

DC current gain

V_CE= 5 V; I_C= 3 A

40

APPLICATION INFORMATION

RF performance at T_h= 25 °C in a common base test circuit.

f

MODE OF OPERATION

(GHz)

V_CE

(V)

P_L

(W)

G_P

(dB)

η_C

(%)

2.7 to 3.1

40

≥110

≥7

≥35

Class-C; t_p= 100 µs; δ = 10%

2.7 to 2.9

2.9 to 3.1

typ. 130

typ. 120

typ. 8

typ. 7.5

typ. 42

typ. 40

1998 Jan 30

3

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS2731-110

MBK284

MBK285

10

50

140

P

handbook, halfpage

2.7

3.1

L

η

G

C

p

(W)

120

2.9 GHz

η

(%)

40

C

(dB)

8

G

p

100

80

60

40

20

6

4

30

20

2

10

0

2.7

0

10

2.8

2.9

3

3.1

12

14

16

18

20

P

(W)

f (GHz)

D

V_CE= 40 V; class-C; t_p= 100 µs; δ = 10%.

Fig.2 Power gain and efficiency as functions of

frequency; typical values.

Fig.3 Load power as a function of drive power;

typical values.

MGM538

MGM539

8

12

handbook, halfpage

Z

L

x

Z

i

(Ω)

R

L

(Ω)

4

8

0

−4

−8

r

i

4

0

X

L

2.6

2.8

3

3.2

2.6

2.8

3

3.2

f (GHz)

V_CB= 40 V; class-C; P_L= 110 W.

Fig.4 Input impedance as function of frequency

(series components); typical values.

Fig.5 Load impedance as function of frequency

(series components); typical values.

1998 Jan 30

4

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS2731-110

30

handbook, full pagewidth

40

L8

C3

L11

L2

RC

C2

L7

L1

L4

L5

L10

L9

C1

L6

L3

input

output

L13

L14

L12

MGM540

Dimensions in mm.

The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.

1998 Jan 30

5

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS2731-110

List of components

COMPONENT

C1, C2

DESCRIPTION

VALUE

100 pF

DIMENSIONS

CATALOGUE No.

multilayer ceramic chip

capacitor; note 1

C3

multilayer ceramic chip

capacitor

100 nF

RC

multilayer ceramic chip

capacitor in series with SMD

resistor

100 nF + 5 Ω

L1

stripline; note 2

length 4.5 mm

width 10 mm

L2

length 2.5 mm

width 16.4 mm

L3

length 8.3 mm

width 1 mm

L4

length 8 mm

width 1.5 mm

L5

length 2 mm

width 8.9 mm

L6

length 12.7 mm

width 1.2 mm

L7

length 4.5 mm

width 10 mm

L8

length 2.5 mm

width 24.4 mm

L9

length 4.4 mm

width 1 mm

L10

L11

L12

L13

L14

length 5.2 mm

width 1 mm

length 9.3 mm

width 1 mm

length 2.5 mm

width 6 mm

length 7.8 mm

width 1.2 mm

length 7.5 mm

width 1.2 mm

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on double-clad printed-circuit board with Duroid dielectric (ε_r= 2.2); thickness = 0.38 mm.

1998 Jan 30

6

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS2731-110

PACKAGE OUTLINE

Flanged hermetic ceramic package; 2 mounting holes; 2 leads

SOT423A

U

1

D

A

F

3

D

1

q

c

1

p

H

U

E

2

1

2

b

Q

0

5

10 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

A

b

c

D

E

F

H

p

Q

q

U

2

1

9.53

9.27

0.16

0.10

5.58

5.04

12.02 12.83 8.82 10.29

11.76 12.57 8.56 10.03

1.58

1.46

19.18

18.92

3.43

3.17

3.42 16.64 22.99 9.91

2.88 16.38 22.73 9.65

mm

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

SOT423A

97-04-01

1998 Jan 30

7

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS2731-110

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1998 Jan 30

8

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS2731-110

NOTES

1998 Jan 30

9

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS2731-110

NOTES

1998 Jan 30

10

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS2731-110

NOTES

1998 Jan 30

11

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SCA57

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under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

125108/00/04/pp12

Date of release: 1998 Jan 30

Document order number: 9397 750 03234


型号：	BLS2731-110
厂家：	NXP
描述：	Microwave power transistor 微波功率晶体管晶体晶体管微波
文件：	总12页 (文件大小：90K)
中文：	中文翻译
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