BLV33 [NXP]
VHF linear power transistor; 甚高频线性功率晶体管
| 型号： | BLV33 |
| 厂家： | 
NXP |
| 描述： | VHF linear power transistor |
| 文件： | 总20页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV33
VHF linear power transistor
1996 Oct 10
Product specification
Supersedes data of November 1995
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
FEATURES
PINNING - SOT147
• Diffused emitter ballasting resistors for an optimum
temperature profile
PIN
SYMBOL
DESCRIPTION
1
2
3
4
c
e
b
e
collector
• Gold sandwich metallization ensures excellent
reliability.
emitter
base
emitter
APPLICATIONS
• Primarily intended for use in linear VHF amplifiers for
television transmitters and transposers.
handbook, halfpage
2
DESCRIPTION
c
1
NPN silicon planar epitaxial transistor encapsulated in a
1⁄16" 4 fslead SOT147 capstan package with ceramic cap.
All leads are isolated from the stud.
b
3
e
4
MAM270
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance in a common emitter push-pull test circuit.
sync compr.(2)
sync in/sync out
(%)
(1)
(1)
MODE OF
OPERATION
fvision
(MHz)
VCE
(V)
IC, IC(ZS)
(A)
Th
(°C)
dim
Po sync
(W)
GP
(dB)
(dB)
70
25
70
−55
−55
>16.5
typ. 26
typ. 90
>9
CW, class-A
224.25
224.25
25
28
3.2
0.1
typ. 9.7
typ. 6.5
CW, class-AB
30/25
Notes
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
2. Television service (negative modulation, C.C.I.R. system).
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 10
2
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
65
UNIT
VCESM
VCEO
VEBO
IC
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
VBE = 0
−
−
−
−
−
−
−
−
V
open base
33
V
open collector
4
V
collector current (DC)
12.5
12.5
20
A
IC(AV)
ICM
average collector current
peak collector current
total power dissipation (DC)
RF power dissipation
A
f > 1 MHz
A
Ptot
Tmb = 25 °C
132
165
+150
200
W
W
°C
°C
Prf
f > 1 MHz; Tmb = 25 °C
Tstg
Tj
storage temperature
−65
operating junction temperature
−
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb(dc) thermal resistance from junction to Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C
1.46
1.17
0.15
K/W
mounting base (DC dissipation)
Rth j-mb(rf) thermal resistance from junction to Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C
K/W
K/W
mounting base (RF dissipation)
Rth mb-h
thermal resistance from mounting
base to heatsink
Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C
MGG120
MGG119
2
200
10
handbook, halfpage
handbook, halfpage
P
tot
I
C
(W)
(A)
150
(1)
10
(2)
(1)
(3)
(2)
100
1
1
50
0
2
50
100
10
10
T
(°C)
V
(V)
h
CE
(1) Tmb = 25 °C.
(2) Th = 70 °C.
(1) Continuous DC (including RF class-A) operation.
(2) Continuous RF operation.
(3) Second breakdown limit (independent of temperature).
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1996 Oct 10
3
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
MGG121
2.0
R
th j-h
(K/W)
1.8
1.6
1.4
1.2
1.0
T = 200 °C
j
175 °C
150 °C
125 °C
100 °C
75 °C
0
50
100
150
P
(W)
tot
Rth mb-h = 0.15 K/W.
Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters.
Example
Nominal class-A operation: VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Figure 4 shows:
Rth j-h = max. 1.60 K/W
Tj = max. 198 °C.
Typical device:
Rth j-h = typ.1.50 K/W
Tj = typ. 190 °C.
1996 Oct 10
4
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
TYP. MAX. UNIT
V(BR)CES
V(BR)CEO
V(BR)EBO
ICES
collector-emitter breakdown voltage VBE = 0; IC = 25 mA
collector-emitter breakdown voltage open base; IC = 100 mA
−
−
V
33
4
−
−
V
emitter-base breakdown voltage
collector cut-off current
DC current gain
open collector; IE = 10 mA
VBE = 0; VCE = 30 V
−
−
V
−
−
1
mA
hFE
VCE = 25 V; IC = 3 A; note 1
15
−
50
0.75
680
100
−
VCEsat
fT
collector-emitter saturation voltage IC = 6 A; IB = 0.6 A; note 1
V
transition frequency
VCB = 25 V; IE = −3 A;
−
−
MHz
f = 100 MHz; note 2
transition frequency
V
CB = 25 V; IE = −6 A;
f = 100 MHz; note 2
VCB = 25 V; IE = ie = 0; f = 1 MHz −
−
750
−
MHz
Cc
collector capacitance
feedback capacitance
155
88
−
−
pF
pF
Cre
IC = 100 mA; VCE = 25 V;
f = 1 MHz
−
Ccs
collector-stud capacitance
−
3
−
pF
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0.01.
1996 Oct 10
5
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
MGG129
MGG130
600
75
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
(1)
400
50
25
(2)
200
0
0
0
0
20
40
5
10
15
V
(V)
CB
I
(A)
C
Tj = 25 °C.
(1) VCE = 25 V.
(2) VCE = 5 V.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.5 DC current gain as a function of collector
current; typical values.
Fig.6 Collector capacitance as a function of
collector-base voltage; typical values.
MGG118
MGG131
10
1000
handbook, halfpage
handbook, halfpage
f
T
(MHz)
800
I
C
(A)
(1)
(2)
600
400
200
0
1
−1
10
0.5
1
1.5
2
−0
−5
−10
−15
V
(V)
I
(A)
BE
E
VCE = 25 V.
(1) Th = 70 °C.
(2) Th = 25 °C.
VCB = 25 V; f = 100 MHz; Tj = 25 °C.
Fig.7 Transition frequency as a function of emitter
current; typical values.
Fig.8 Collector current as a function of
base-emitter voltage; typical values.
1996 Oct 10
6
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
APPLICATION INFORMATION
RF performance in VHF class-A operation (linear power amplifier)
(1)
(1)
MODE OF
OPERATION
fvision
(MHz)
VCE
(V)
IC
(A)
Th
(°C)
dim
Po sync
GP
(dB)
(dB)
−55
−55
−52
−55
(W)
70
70
70
25
>16.5
>9
typ. 17.5
typ. 26.5
typ. 23
typ. 9.3
typ. 9.3
typ. 9.7
CW, class-A
224.25
25
3.2
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
C7
R1
C4
+V
+V
BB
CC
C9
C12
R2
C8
L4
L3
D.U.T.
C5
C6
C10
L5
C1
C14
C13
L1
L6
50 Ω
input
50 Ω
output
L2
C2
C3
C11
MGG148
Fig.9 Class-A test circuit at fvision = 224.25 MHz.
1996 Oct 10
7
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
List of components used in test circuit (see Figs 9 and 10).
COMPONENT
C1, C14
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
multilayer ceramic chip
capacitor; note 1
680 pF, 500 V
C2, C11, C13
C3
film dielectric trimmer
film dielectric trimmer
4 to 40 pF
2 to 18 pF
680 pF, 50 V
2222 809 08002
2222 809 09003
2222 852 13681
C4, C9
multilayer ceramic chip
capacitor
C5, C6
C7, C8
C10
multilayer ceramic chip
capacitor; note 1
68 pF, 500 V
470 nF, 50 V
24 pF, 500 V
10 µF, 40 V
placed 2 mm from
transistor edge
multilayer ceramic chip
capacitor
2222 856 48474
multilayer ceramic chip
capacitor; note 1
C12
solid aluminium electrolytic
capacitor
L1
11⁄2 turns of closely wound
int. diameter 4.5 mm
1.6 mm enamelled Cu wire
leads 2 × 3 mm
L2
L3
L4
stripline
30 Ω
1 µH
6 mm × 32.7 mm
microchoke
4322 057 01080
2 turns of 1.1 mm enamelled 27 nH
Cu wire
int. diameter 4.5 mm
length 2.9 mm
leads 2 × 5 mm
L5
L6
stripline
30 Ω
6 mm × 24 mm
2 turns of 1.1 mm enamelled 19 nH
Cu wire
int. diameter 3.5 mm
length 3.5 mm
leads 2 × 5 mm
L2, L5
stripline; note 2
R1, R2
carbon resistor
10 Ω
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄16".
1996 Oct 10
8
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
117
50
+V
+V
CC
BB
C8
C9
C7
C4
R2
R1
L3
C12
C5
(1)
C11
L5
C2
C10
L4
L6
50 Ω
input
50 Ω
output
L2
L1
C14
C1
C3
C13
C6
MGG150
Dimensions in mm.
The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections
are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the
copper on the component side and the ground-plane.
(1) C10 positioned under C11.
Fig.10 Component layout and printed-circuit board for 224.25 MHz class-A test circuit.
1996 Oct 10
9
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
MGG115
MGG116
−44
10
G
30
(1)
handbook, halfpage
handbook, halfpage
G
p
d
im
(dB)
p
(2)
(dB)
d
cm
−48
8
6
4
2
0
(%)
20
−52
−56
−60
(2)
(1)
(1)
(2)
10
d
im
−64
0
0
10
20
30
40
20
40
P
(W)
P
(W)
o sync
o sync
VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz.
(1) Th = 25 °C.
VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz.
(1) Th = 25 °C.
(2) Th = 70 °C.
(2) Th = 70 °C.
Fig.11 Intermodulation distortion and power gain
as a functions of output power.
Fig.12 Cross-modulation distortion as a function of
output power.
Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak
sync level (see Fig.11).
Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to −20 dB (see Fig.12).
Ruggedness in class-A operation
The BLV33 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases up to
30 W (RMS) or 40 W (PEP) under the following conditions: VCE = 25 V; IC = 3.2 A; Th = 70 °C; f = 224.25 MHz;
Rth mb-h = 0.15 K/W.
1996 Oct 10
10
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
MGG128
MGG126
2
6
handbook, halfpage
handbook, halfpage
Z
L
(Ω)
Z
i
(Ω)
x
r
i
1
4
i
R
X
L
0
2
L
−1
50
0
50
150
250
150
250
f (MHz)
f (MHz)
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Fig.13 Input impedance as a function of frequency
(series components); typical values.
Fig.14 Load impedance as a function of frequency
(series components); typical values.
MGG127
30
handbook, halfpage
G
p
(dB)
20
10
0
50
150
250
f (MHz)
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 °C.
Fig.15 Power gain as a function of frequency;
typical values.
1996 Oct 10
11
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
RF performance in VHF class-AB operation (C.W)
MODE OF
OPERATION
f
VCE
(V)
IC, IC(ZS)
(A)
Th
(°C)
PL
(W)
IC
(A)
ηC
(%)
GP
(dB)(1)
(MHz)
40
90
typ. 2.60 typ. 55
typ. 4.46 typ. 72
typ. 7.5
typ. 6.5
CW, class-AB
224.25
28
0.1
70
Note
1. Gain compression point of 1 dB is at typical 90 W (minimum 80 W). Using a 3rd-order amplitude transfer
characteristic, 1 dB compression corresponds with 30 % sync input / 25 % sync output compression in television
service (negative modulation, C.C.I.R. system).
C6
C7
R1
+V
+V
CC
BB
C10
R2
C13
C15
L4
L5
L2
C11
D.U.T.
C4
C5
C8
C2
C1
C17
L1
L6
50 Ω
input
50 Ω
output
L3
C3
C16
C9
C12
C14
MGG145
Fig.16 Class-AB test circuit at fvision = 224.25 MHz.
1996 Oct 10
12
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
List of components used in test circuit (see Fig.16).
COMPONENT
C1, C17
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
multilayer ceramic chip
capacitor; note 1
680 pF, 500 V
C2
multilayer ceramic chip
capacitor; note 1
39 pF, 500 V
C3, C16
C4
film dielectric trimmer
2 to 18 pF
2222 809 09003
multilayer ceramic chip
capacitor; note 1
43 pF, 500 V
C5
film dielectric trimmer
polyester capacitor
4 to 40 pF
330 nF
2222 809 08002
2222 852 13681
C6, C10
C7, C13
multilayer ceramic chip
capacitor
680 pF, 50 V
C8, C9
multilayer ceramic chip
capacitor; note 1
68 pF, 500 V
27 pF, 500 V
placed 2.5 mm from
transistor edge
C11, C12
multilayer ceramic chip
capacitor; note 1
placed 7 mm from
transistor edge
C14
C15
film dielectric trimmer
5 to 60 pF
2222 809 08003
solid aluminium electrolytic
capacitor
10 µF, 40 V
L1
L2
2 turns of 1.6 mm enamelled 25 nH
Cu wire
int. diameter 4.3 mm
length 3.4 mm
leads 2 × 5 mm
4 turns closely wound
120 nH
int. diameter 6 mm
1.1 mm enamelled Cu wire
leads 2 × 5 mm
L3
L4
stripline; note 2
stripline; note 2
30 Ω
48 Ω
6 mm × 48.8 mm
3 mm × 27 mm
at 3 mm from
transistor edge
L5
L6
stripline; note 2
30 Ω
6 × 42.9 mm
2 turns of 1.6 mm enamelled 24 nH
Cu wire
int. diameter 4 mm
length 3.4 mm
leads 2 × 5 mm
R1, R2
carbon resistor
10 Ω
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (εr = 4.5); thickness 1⁄16".
1996 Oct 10
13
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
MGG125
MGG117
7.5
75
120
handbook, halfpage
handbook, halfpage
G
p
G
p
η
P
L
c
(dB)
(%)
(W)
80
5
50
η
c
40
2.5
0
25
100
0
0
50
10
20
30
P
(W)
P
(W)
L
S
VCE = 28 V; IC(ZS) = 0.1 A; Th = 70 °C; fvision = 224.25 MHz.
VCE = 28 V; IC(ZS) = 0.1 A; Th = 70 °C; fvision = 224.25 MHz.
Fig.17 Load power as a function of source power;
typical values.
Fig.18 Power gain and efficiency as functions of
load power; typical values.
Ruggedness in class-AB operation
The BLV33 is capable of withstanding a full load mismatch corresponding to VSWR ≤ 2 through all phases) up to 60 W
(RMS) and 90 W (PEP) under the following conditions: VCE = 28 V; Th = 70 °C; f = 224.25 MHz; Rth mb-h = 0.15 K/W.
1996 Oct 10
14
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
MGG123
MGG124
4
2
handbook, halfpage
handbook, halfpage
Z
i
(Ω)
Z
L
(Ω)
R
L
x
r
i
1
i
2
0
X
L
0
50
−1
50
150
250
150
250
f (MHz)
f (MHz)
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Fig.19 Input impedance (series components);
typical values.
Fig.20 Load impedance (series components);
typical values.
MGG122
20
handbook, halfpage
G
p
(dB)
10
0
50
150
250
f (MHz)
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 °C.
Fig.21 Power gain as a function of frequency;
typical values.
1996 Oct 10
15
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
PACKAGE OUTLINE
5.9
5.5
(4x)
5.5
0.14
e
6.5
min
(4x)
metal
1/4"x 28 UNF
BeO
c
ceramic
29
27
b
1.9
max
11
e
5.30
4.85
13 max
29
27
13.4
12.6
8.3
max
MBC850
Dimensions in mm.
Torque on nut: min. 2.3 Nm; max. 2.7 Nm.
Diameter of clearance hole in heatsink: max. 6.4 mm.
Mounting hole to have no burrs at either end.
De-burring must leave surface flat; do not chamfer or countersink either end of hole.
When locking is required an adhesive is preferred instead of a lock washer.
Fig.22 SOT147.
1996 Oct 10
16
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 10
17
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
NOTES
1996 Oct 10
18
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
NOTES
1996 Oct 10
19
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Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 1949
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580/xxx
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1996
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127041/1200/01/pp20
Date of release: 1996 Oct 10
Document order number: 9397 750 01033
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