BT258B-500R [NXP]
Thyristors logic level; 晶闸管逻辑电平
| 型号： | BT258B-500R |
| 厂家： | 
NXP |
| 描述： | Thyristors logic level |
| 文件： | 总6页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Thyristors
logic level
BT258B series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
thyristors in
a
plastic envelope
suitable for surface mounting,
intended for use in general purpose
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
BT258B- 500R 600R 800R
VDRM
VRRM
IT(AV)
,
Repetitive peak off-state
500
600
800
V
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
5
8
75
5
8
75
5
8
75
A
A
A
IT(RMS)
ITSM
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
cathode
mb
a
k
2
anode
gate
3
2
mb anode
1
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -600R -800R
VDRM, VRRM Repetitive peak off-state
voltages
-
5001 6001 800
V
IT(AV)
IT(RMS)
ITSM
Average on-state current half sine wave; Tmb ≤ 111 ˚C
-
-
5
8
A
A
RMS on-state current
Non-repetitive peak
on-state current
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
-
-
-
75
82
28
50
A
A
t = 8.3 ms
t = 10 ms
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/µs
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
A2s
A/µs
IGM
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
2
5
A
V
V
W
W
˚C
˚C
VGM
VRGM
PGM
PG(AV)
Tstg
-
-
5
-
-
5
over any 20 ms period
0.5
150
1252
-40
-
Tj
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
logic level
BT258B series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
-
-
2.0
K/W
Rth j-a
minimum footprint, FR4 board
-
55
-
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
IL
Gate trigger current
Latching current
Holding current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 16 A
-
50
0.4
0.3
1.3
0.4
0.2
0.1
200
10
6
µA
mA
mA
V
-
IH
-
-
-
VT
VGT
On-state voltage
Gate trigger voltage
1.5
1.5
-
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 110 ˚C
V
0.1
-
V
mA
ID, IR
Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 100 Ω
ITM = 10 A; VD = VDRM(max); IG = 5 mA;
dIG/dt = 0.2 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 12 A; VR = 24 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
50
100
-
-
-
V/µs
tgt
tq
-
2
µs
-
100
µs
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
logic level
BT258B series
ITSM / A
Ptot / W
8
Tmb(max) / C
a = 1.57
80
70
60
50
40
30
20
10
0
109
111
113
115
117
119
121
conduction form
angle
factor
a
4
2.8
2.2
1.9
1.57
I
TSM
7
6
5
4
3
2
1
0
I
degrees
T
1.9
30
60
90
120
180
time
Tj initial = 25 C max
T
2.2
2.8
4
123
125
0
1
2
3
4
5
6
1
10
100
1000
IT(AV) / A
Number of half cycles at 50Hz
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
a = form factor = IT(RMS)/ IT(AV)
.
ITSM / A
IT(RMS) / A
1000
100
10
24
20
16
12
8
dI T/dt limit
I
TSM
time
I
T
T
4
Tj initial = 25 C max
0
10ms
10us
100us
1ms
0.01
0.1
surge duration / s
1
10
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 111˚C.
IT(RMS) / A
VGT(Tj)
9
8
7
6
5
4
3
2
1
0
VGT(25 C)
1.6
1.4
1.2
1
111 C
0.8
0.6
0.4
-50
0
50
Tmb / C
100
150
-50
0
50
100
150
Tj / C
Fig.3. Maximum permissible rms current IT(RMS)
versus mounting base temperature Tmb.
,
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
logic level
BT258B series
IGT(Tj)
IGT(25 C)
IT / A
30
25
20
15
10
5
Tj = 125 C
Tj = 25 C
3
2.5
2
Vo = 0.99 V
Rs = 0.0325 ohms
typ
max
1.5
1
0.5
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
2
VT / V
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
Zth j-mb (K/W)
10
1
3
2.5
2
1.5
1
t
P
D
0.1
0.01
p
t
0.5
0
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
IH(Tj)
IH(25 C)
dVD/dt (V/us)
1000
3
2.5
2
RGK = 100 ohms
100
1.5
1
10
0.5
0
1
-50
0
50
Tj / C
100
150
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
logic level
BT258B series
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
4.5 max
1.4 max
10.3 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Thyristors
logic level
BT258B series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
6
Rev 1.100
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