BU506 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU506 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU506
DESCRIPTION
·With TO-220C package
·High voltage
·High-speed switching
APPLICATIONS
·Horizontal deflection circuits of colour
TV receivers.
·Line-operated switch-mode applications.
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current
CONDITIONS
Open emitter
VALUE
UNIT
V
1500
Open base
700
V
Open collector
6
V
5
A
ICM
8
3
A
IB
A
IBM
Base current(peak)
5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
100
150
-65-150
W
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU506
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
hFE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=100mA; IB=0
Collector-emitter saturation voltage IC=3A; IB=1.33A
700
V
V
V
1.0
1.3
30
Base-emitter saturation voltage
DC current gain
IC=3A; IB=1.33A
IC=0.1A ; VCE=5V
6
13
V
CE=rated; VBE=0
0.5
1.0
ICES
Collector cut-off current
Emitter cut-off current
mA
mA
TC=125℃
IEBO
VEB=6V; IC=0
10
Switching times
ts
tf
Storage time
6.5
0.7
μs
μs
ICM = 3 A; IB( ) = 1A
LB = 12μH
end
Fall time
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU506
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
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