BUJ403 [NXP]
Silicon Diffused Power Transistor; 硅扩散型功率晶体管
| 型号： | BUJ403 |
| 厂家： | 
NXP |
| 描述： | Silicon Diffused Power Transistor |
| 文件： | 总7页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCBO
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1200
1200
550
6
V
V
V
A
A
W
V
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
-
-
-
ICM
Collector current peak value
Total power dissipation
-
10
Ptot
Tmb ≤ 25 ˚C
-
100
1.0
-
VCEsat
hFEsat
tf
Collector-emitter saturation voltage
DC current gain
IC = 2 A; IB = 0.4 A
IC = 3 A; VCE = 5 V
IC=2.5 A; IB1=0.5 A
0.15
15.5
170
Fall time
300
ns
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
tab
base
2
collector
emitter
b
3
tab collector
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
VCBO
IC
Collector to emitter voltage
VBE = 0 V
-
1200
550
1200
6
V
V
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
-
-
V
-
A
ICM
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
-
10
A
IB
IBM
Ptot
Tstg
Tj
-
3
5
100
150
150
A
-
-
A
Tmb ≤ 25 ˚C
W
˚C
˚C
-65
-
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-mb
Rth j-a
Junction to mounting base
Junction to ambient
-
1.25
-
K/W
K/W
in free air
60
December 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
CES,ICBO
Collector cut-off current 1
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
ICES
;
ICEO
Collector cut-off current 1
Emitter cut-off current
VCEO = VCEOMmax(550V)
VEB = 7 V; IC = 0 A
-
-
-
-
-
0.1
0.1
-
mA
mA
V
IEBO
VCEOsust
Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA;
L = 25 mH
550
VCEsat
VBEsat
hFE
hFE
hFEsat
hFEsat
Collector-emitter saturation voltage IC = 2.0 A; IB = 0.4 A
Base-emitter saturation voltage
DC current gain
-
-
13
20
13
-
0.15
0.91
25
30
18.5
15.5
1.0
1.5
-
47
25
-
V
V
IC = 2.0 A; IB = 0.4 A
IC = 1 mA; VCE = 5 V
IC = 500 mA;VCE = 5 V
IC = 2.0 A; VCE = 5 V
IC = 3.0 A; VCE = 5 V
DC current gain
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (resistive load)
ICon = 2.5 A; IBon = -IBoff = 0.5 A;
RL = 75 ohms; VBB2 = 4 V;
ton
ts
tf
Turn-on time
Turn-off storage time
Turn-off fall time
-
-
-
0.5
3
0.3
µs
µs
µs
Switching times (inductive load)
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V
ts
tf
Turn-off storage time
Turn-off fall time
-
1.5
300
µs
ns
170
Switching times (inductive load)
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
ts
tf
Turn-off storage time
Turn-off fall time
-
-
1.8
300
µs
ns
1 Measured with half sine-wave voltage (curve tracer).
December 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
ICon
90 %
90 %
+ 50v
100-200R
IC
10 %
ts
Horizontal
Oscilloscope
Vertical
tf
ton
toff
IBon
IB
10 %
1R
300R
tr 30ns
6V
30-60 Hz
-IBoff
Fig.1. Test circuit for VCEOsust
.
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
LC
250
200
IBon
LB
100
0
T.U.T.
-VBB
min
VCE / V
VCEOsust
Fig.2. Oscilloscope display for VCEOsust
.
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
ICon
90 %
VCC
IC
R
L
VIM
10 %
R
B
tf
ts
t
0
T.U.T.
toff
tp
IBon
IB
T
t
-IBoff
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
Fig.6. Switching times waveforms with inductive load.
December 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
Normalised Power Derating
VBEsat/V
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
Tmb /
100
120
140
0.1
1
IC/A
10
C
Fig.7. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Tmb)
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, VBEsat = f(IC); at IC/IB =4.
VCEsat/V
hFE
0.5
100
10
1
5V
0.4
0.3
0.2
0.1
0.0
Tj = 25 C
1V
0.1
1
10
IC/A
0.01
0.1
1
10
IC / A
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.
Fig.8. Typical DC current gain. hFE = f(IC)
parameter VCE
VCEsat/V
Zth / (K/W)
10
2.0
1.6
1.2
0.8
0.4
0.0
IC=1A
2A
3A
4A
1
0.5
D=
0.2
0.1
0.05
0.02
0
tp
t
0.1
p
P
D =
D
T
t
T
0.01
1E-06
1E-04
1E-02
t / s
1E+00
0.01
0.10
IB/A
1.00
10.00
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IB); Tj=25˚C.
Fig.12. Transient thermal impedance.
th j-mb = f(t); parameter D = tp/T
Z
December 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
IC (A)
11
VCC
10
9
8
7
6
5
4
3
2
1
0
LC
VCL
IBon
LB
T.U.T.
-VBB
0
200
400
600 800
VCEclamp (V)
1,000
1,200
1,400
Fig.13. Reversebias safe operating area Tj ≤ Tjmax
Fig.14. Test Circuit for reversebias safe operating
area
Vcl ≤ 1000V; Vcc = 150V; VBB = -5V;LB = 1µH; Lc =
200µH
December 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.15. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
December 1998
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
December 1998
7
Rev 1.200
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