BZA868A [NXP]
Quadruple ESD transient voltage suppressor; 四ESD瞬态电压抑制器
| 型号： | BZA868A |
| 厂家： | 
NXP |
| 描述： | Quadruple ESD transient voltage suppressor |
| 文件： | 总10页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BZA800A-series
Quadruple ESD transient voltage
suppressor
Preliminary specification
2000 Apr 18
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage
suppressor
BZA800A-series
FEATURES
PINNING
PIN
• ESD rating >8 kV, according to IEC1000-4-2
• SOT353 (SC-88A) surface mount package
• Common anode configuration
DESCRIPTION
1
2
3
4
5
cathode 1
common anode
cathode 2
APPLICATIONS
cathode 3
cathode 4
• Computers and peripherals
• Audio and video equipment
• Communication systems
• Medical equipment.
3
2
1
handbook, halfpage
1
DESCRIPTION
3
4
5
2
Monolithic transient voltage suppressor diode in a five lead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.
4
5
Top view
MARKING
TYPE NUMBER
BZA856A
MARKING CODE
Z1
Z2
Z3
Z4
Fig.1 Simplified outline SOT353 (SC-88A)
BZA862A
BZA868A
BZA820A
2000 Apr 18
2
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
BZA800A-series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IZ
working current
continuous forward current
Ta = 25 °C
Ta = 25 °C
−
−
−
−
note 1
200
mA
IF
mA
A
IFSM
Ptot
PZSM
non-repetitive peak forward current tp = 1 ms; square pulse
total power dissipation Ta = 25 °C
3.75
335
mW
non repetitive peak reverse power square pulse; tp = 1 ms; see Fig.3
dissipation
BZA856A, BZA862A, BZA868A
BZA820A
−
−
24
W
W
°C
°C
17
Tstg
Tj
storage temperature
junction temperature
−65
+150
150
−
Notes
1. DC working current limited by Ptot max
.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
thermal resistance from junction to all diodes loaded
ambient
370
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
IF = 200 mA
1.3
V
reverse current
BZA856A
VR = 3 V
VR = 4 V
VR = 4.3 V
VR = 15 V
2000
700
200
100
nA
nA
nA
nA
BZA862A
BZA868A
BZA820A
Tj = 25 °C unless otherwise specified
DIFFERENTIAL
RESISTANCE
rdif (Ω)
DIODE CAP. NON-REPETITIVEPEAK
WORKING VOLTAGE
TYPE
TEMP. COEFF.
SZ (mV/K)
at IZ = 1 mA
Cd (pF)
at f = 1 MHz;
VR = 0 V
REVERSE CURRENT
IZSM (A) at tp = 1 ms;
VZ (V)
at IZ = 1 mA
at IZ = 1 mA
T
amb = 25 °C
MIN. TYP. MAX.
MAX.
TYP.
MAX.
MAX.
BZA856A
BZA862A
BZA868A
5.32
5.89
6.46
5.6
6.2
6.8
5.88
6.51
7.14
400
300
200
125
−0.2
1.8
3
240
200
180
50
3.2
2.9
2.6
0.6
BZA820A 19
20
21
16
2000 Apr 18
3
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
BZA800A-series
100
10
IZSM
(A)
BZA856A, BZA862A, BZA868A
PZSM
(W)
BZA856A
BZA862A
BZA868A
BZA820A
BZA820A
10
1
1
0.1
0.01
0.01
0.1
1
10
0.1
1
10
tp (ms)
tp (ms)
PZSM = VZSM × IZSM
.
V
ZSM is the non-repetitive peak reverse voltage at IZSM
.
Fig.3 Maximum non-repetitive peak reverse
Fig.2 Maximum non-repetitive peak reverse
current as a function of pulse time.
power dissipation as a function of pulse
duration (square pulse).
200
Cd
(pF)
160
120
BZA856A
BZA862A
BZA868A
80
40
0
BZA820A
0
5
10
15
V
R (V)
Tj = 25 °C; f = 1 MHz.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2000 Apr 18
4
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
BZA800A-series
ESD Tester
Digitizing
Oscilloscope
RZ
450 ohm
10X
Attenuator
RG 223/U
50 ohm Coax
note 1
CZ
50 ohm
IEC 1000-4-2 network
Note 1: attenuator is only used for open
CZ = 150 pF; RZ = 330 Ω
socket high voltage measurements
1/4 BZA800A
Vertical Scale =10 V/Div
BZA820A
Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div
Horizontal Scale = 50 ns/Div
GND-4
GND-3
GND-2
GND-1
BZA868A
BZA862A
BZA856A
GND
unclamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)
GND
GND
Vertical Scale =10 V/Div
Horizontal Scale = 50 ns/Div
Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div
unclamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 1000-4-2 network)
Fig.5 ESD clamping test set-up and waveforms.
2000 Apr 18
5
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
BZA800A-series
APPLICATION INFORMATION
Typical common anode application
A quadruple transient suppressor in a SOT353 package makes it possible to protect four separate lines using only one
package. Two simplified examples are shown in Figs 6 and 7.
A
B
KEYBOARD
TERMINAL
PRINTER
ETC.
C
I/O
D
FUNCTIONAL
DECODER
GND
BZA800A
Fig.6 Computer interface protection.
Fig.7 Microprocessor protection.
2000 Apr 18
6
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
BZA800A-series
Device placement and printed-circuit board layout
Circuit board layout is of extreme importance in the
suppression of transients. The clamping voltage of the
BZA800A is determined by the peak transient current and
the rate of rise of that current (di/dt). Since parasitic
inductances can further add to the clamping voltage
(V = L di/dt) the series conductor lengths on the
printed-circuit board should be kept to a minimum. This
includes the lead length of the suppression element.
In addition to minimizing conductor length the following
printed-circuit board layout guidelines are recommended:
1. Place the suppression element close to the input
terminals or connectors.
2. Keep parallel signal paths to a minimum.
3. Avoid running protection conductors in parallel with
unprotected conductors.
4. Minimize all printed-circuit board loop areas including
power and ground loops.
5. Minimize the length of the transient return path to
ground.
6. Avoid using shared transient return paths to a common
ground point.
2000 Apr 18
7
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
BZA800A-series
PACKAGE OUTLINE
Plastic surface mounted package; 5 leads
SOT353
D
B
E
A
X
y
H
v
M
A
E
5
4
Q
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max
1
(2)
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-88A
97-02-28
SOT353
2000 Apr 18
8
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
BZA800A-series
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Apr 18
9
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SCA
© Philips Electronics N.V.
2000
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115002/00/03/pp10
Date of release: 2000 Apr 18
Document order number: 9397 750 07042
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