MRF18060AS [NXP]
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR;
| 型号： | MRF18060AS |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391BVAR 放大器 CD 晶体管 |
| 文件： | 总8页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by MRF18060A/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications from frequencies up to
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1805 – 1880 MHz.
60 W, 1.80 – 1.88 GHz, 26 V
LATERAL N–CHANNEL
BROADBAND
•
Typical GSM Performance, Full Frequency Band (1805 – 1880
MHz)
RF POWER MOSFETs
Power Gain — 13 dB (Typ) @ 60 Watts
Efficiency — 45% (Typ) @ 60 Watts
•
•
•
•
•
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Ease of Design for Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts (CW)
Output Power
•
Excellent Thermal Stability
CASE 465–04, STYLE 1
(MRF18060A)
CASE 465A–04, STYLE 1
(MRF18060AS)
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain–Source Voltage
Gate–Source Voltage
V
DSS
V
GS
+15, –0.5
Total Device Dissipation @ T ≥ 25°C
Derate above 25°C
P
D
180
1.03
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
–65 to +150
200
°C
°C
stg
T
J
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
Machine Model
2 (Typical)
M3 (Typical)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.97
°C/W
θJC
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
Motorola, Inc.2000
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V = 0 Vdc, I = 10 µAdc)
V
65
—
—
—
—
—
—
6
Vdc
µAdc
µAdc
(BR)DSS
GS
Zero Gate Voltage Drain Current
(V = 26 Vdc, V = 0)
D
I
DSS
DS
Gate–Source Leakage Current
(V = 5 Vdc, V = 0)
GS
I
1
GSS
GS DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
V
2
—
3.9
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
(V
DS
= 10 Vdc, I = 300 µAdc)
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 500 mAdc)
2.5
—
—
4.5
—
—
DS
Drain–Source On–Voltage
(V = 10 Vdc, I = 2 Adc)
D
V
0.27
4.7
GS
Forward Transconductance
(V = 10 Vdc, I = 2 Adc)
D
g
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
C
—
—
—
160
740
2.7
—
—
—
pF
pF
pF
iss
(V
DS
= 26 Vdc, V
= 0, f = 1 MHz)
= 0, f = 1 MHz)
GS
GS
Output Capacitance (1)
(V = 26 Vdc, V
C
oss
DS
Reverse Transfer Capacitance
(V = 26 Vdc, V = 0, f = 1 MHz)
C
rss
DS
GS
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain @ 60 W (2)
G
dB
%
ps
(V
DD
= 26 Vdc, I
= 500 mA, f = 1805 – 1880 MHz)
11.5
13
—
DQ
Drain Efficiency @ 60 W (2)
(V = 26 Vdc, I = 500 mA, f = 1805 – 1880 MHz)
η
43
10
45
—
—
—
DD
Input Return Loss (2)
(V = 26 Vdc, P
DQ
IRL
dB
= 60 W CW, I
= 60 W CW, I
= 500 mA,
DD
out
DQ
f = 1805 – 1880 MHz)
Output Mismatch Stress
Ψ
No Degradation In Output Power
Before and After Test
(V
DD
= 26 Vdc, P
All Phase Angles at Frequency of Tests)
= 500 mA VSWR = 10:1,
out
DQ
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch
consistency.
MRF18060A MRF18060AS
2
RF DEVICE DATA
R2
R1
T1
Z6
Z5
V
DD
+
R3
C4
C3
R4
V
GG
C1
C2
RF
OUTPUT
R5
Z4
Z7
RF
INPUT
C7
Z1
Z2
Z3
C6
C5
DUT
C1
C2, C4, C7
C3
C5
C6
100 nF, Chip Capacitor 1203
10 pF, Chip Capacitor
10 F, 35 V Electrolytic Tantalum Capacitor
1.2 pF, Chip Capacitor
R1, R3
R2, R4
R5
T1
Z1 to Z7
2.2 kΩ, Chip Resistor 0805
2.7 kΩ, Chip Resistor 0805
1.1 kΩ, Chip Resistor 0805
BC847 Transistor SOT–23
Microstrip Transmission Lines
1.0 pF, Chip Capacitor
Figure 1. 1805 – 1880 MHz Test Fixture Schematic
V
V
BIAS
C3
C1
SUPPLY
R2
C5
R3 R4
C4
R1
C2
C6
T1
R5
C7
A2
A1
Ground
Ground
MRF18060
Figure 2. 1805 – 1880 MHz Test Fixture Component Layout
RF DEVICE DATA
MRF18060A MRF18060AS
3
V
bias
C1
T1
R1
R5
R2
V
supply
+
C2
C3
C4
R3
R4
T2
C5
R6
RF
INPUT
RF
OUTPUT
TL6
TL7
TL1
TL2
TL3
TL4
TL5
C7
C8
C6
C1
C2
C3, C5, C8
C4
C6
C7
1
F, Chip Capacitor 0805
R1
R2, R6
R3
R4
R5
10 Ω, Chip Resistor 0805
1 kΩ, Chip Resistor 0805
1.2 kΩ, Chip Resistor 0805
2.2 kΩ, Chip Resistor 0805
5 kΩ, SMD Potentiometer
100 nF, Chip Capacitor 0805
10 pF, ACCU–P Chip Capacitor 0805
10 F, 35 V Tantalum Electrolytic Capacitor
1.8 pF, ACCU–P Chip Capacitor 0805
1 pF, ACCU–P Chip Capacitor 0805
T1
T2
LP2951 Micro–8 Voltage Regulator
BC847 SOT–23 NPN Transistor
Substrate = 0.5 mm Teflon Glass, ε = 2.55
r
Figure 3. 1800 – 2000 MHz Demo Board Schematic
V
bias
Ground
V
supply
C4
R1
C1
R2
R3
T1
R4
R5
T2
C2
C3
C5
R6
C8
C7
C6
MRF18060
Figure 4. 1800 – 2000 MHz Demo Board Component Layout
MRF18060A MRF18060AS
4
RF DEVICE DATA
V
DD
= 26 V, I = 500 mA, P = 60 Watts (CW)
DQ out
f
Z
Ω
Z
OL
Ω
*
in
MHz
1700
1800
1900
2000
2100
0.60 + j2.53
0.80 + j3.20
0.92 + j3.42
1.07 + j3.59
1.31 + j4.00
2.27 + j3.44
2.05 + j3.05
1.90 + j2.90
1.64 + j2.88
1.29 + j2.99
Z
Z
= Complex conjugate of source impedance.
in
* = Complex conjugate of the optimum load at a
given voltage, P1dB, gain, efficiency, bias
current and frequency.
OL
Table 1. Series Equivalent Input and Output Impedance
RF DEVICE DATA
MRF18060A MRF18060AS
5
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
16
15
14
13
12
11
10
100
90
80
70
60
50
40
30
20
I
= 750 mA
DQ
P
in
= 5 W
500 mA
300 mA
2.5 W
1 W
100 mA
V
= 26 Vdc
DD
f = 1880 MHz
V
I
DQ
= 26 Vdc
= 500 mA
9
8
DD
10
0
1
10
, OUTPUT POWER (WATTS)
100
18
20
22
24
26
28
30
P
out
V
, SUPPLY VOLTAGE (VOLTS)
DD
Figure 5. Power Gain versus
Output Power
Figure 6. Output Power versus Supply Voltage
90
80
70
60
50
40
30
20
60
55
50
45
90
80
70
60
50
40
30
20
P
in
= 6 W
3 W
P
out
40
35
30
25
V
I
DQ
= 26 Vdc
= 500 mA
DD
1 W
V
= 26 Vdc
= 500 mA
DD
I
0.5 W
DQ
10
0
20
15
10
0
f = 1880 MHz
1800
1820
1840
1860
1880
1900
0
1
2
3
4
5
6
f, FREQUENCY (MHz)
P , INPUT POWER (WATTS)
in
Figure 7. Output Power versus Frequency
Figure 8. Output Power and Efficiency
versus Input Power
15.0
0
–2
14.5
14.0
13.5
13.0
12.5
12.0
11.5
11.0
G
ps
–4
–6
–8
–10
–12
–14
–16
IRL
V
I
DQ
= 26 Vdc
= 500 mA
DD
–18
–20
10.5
10.0
1700
1800
1900
2000
2100
f, FREQUENCY (MHz)
Figure 9. Wideband Gain and IRL
(at Small Signal)
MRF18060A MRF18060AS
6
RF DEVICE DATA
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3.465–01, –02 AND –03 OBSOLETE, NEW
STANDARD 465–04.
G
Q 2 PL
1
2
M
M
M
0.25 (0.010)
T A
B
4.DIMENSION H IS MEASURED 0.030” AWAY FROM
FLANGE.
–B–
3
INCHES
DIM MIN MAX
1.345 33.91
MILLIMETERS
MIN
MAX
34.16
9.91
K
A
B
C
D
E
1.335
0.380
0.125
0.495
0.035
0.003
0.390
0.170
9.65
3.18
D
N
4.32
12.83
1.14
0.505 12.57
0.045
0.006
0.89
0.08
R
F
0.15
G
H
K
N
Q
R
1.100 BSC
27.94 BSC
M
M
M
M
M
M
0.38 (0.015)
T A
B
0.38 (0.015)
T A
B
0.055
0.170
0.772
0.118
0.365
0.065
0.210
0.788 19.60
0.138
0.375
1.40
4.32
1.65
H
5.33
20.00
3.51
C
3.00
9.27
9.53
–T–
F
SEATING
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
–A–
PLANE
E
CASE 465–04
ISSUE D
(MRF18060A)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3.DIMENSION H IS MEASURED 0.030” AWAY FROM
FLANGE.
RADIUS U
4 PL
RADIUS S
4 PL
1
2
INCHES
DIM MIN MAX
0.815 20.45
MILLIMETERS
–B–
MIN
MAX
20.70
9.91
4.32
12.83
1.14
0.15
1.65
5.33
19.94
9.53
A
B
C
D
E
F
0.805
0.380
0.125
0.495
0.035
0.003
0.055
0.170
0.775
0.365
0.390
0.170
9.65
3.18
K
0.505 12.57
0.045
0.006
0.065
0.210
0.89
0.08
1.40
4.32
D
N
H
K
N
R
S
R
0.785 19.69
0.375 9.27
0.51 REF
0.76 REF
M
M
M
M
M
M
0.38 (0.015)
T A
B
0.64 (0.025)
T A
B
0.020 REF
0.030 REF
H
U
C
STYLE 1:
PIN 1. DRAIN
3
–T–
SEATING
PLANE
F
2. GATE
4. SOURCE
–A–
E
CASE 465A–04
ISSUE D
(MRF18060AS)
RF DEVICE DATA
MRF18060A MRF18060AS
7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334
Technical Information Center: 1–800–521–6274
HOME PAGE: http://www.motorola.com/semiconductors/
MRF18060A/D
相关型号：
MRF18085A
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MOTOROLA
©2020 ICPDF网 联系我们和版权申明