PBSS2515YPNT/R [NXP]
TRANSISTOR 500 mA, 15 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal;
| 型号： | PBSS2515YPNT/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 500 mA, 15 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS2515YPN
15 V low VCE(sat) NPN/PNP
transistor
Product data sheet
2005 Jan 11
Supersedes data of 2002 May 08
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
FEATURES
QUICK REFERENCE DATA
SYMBOL
• Low collector-emitter saturation voltage
• High current capability
PARAMETER
MAX. UNIT
VCEO
ICM
collector-emitter voltage
15
V
• Replaces two SC-70 packaged low VCEsat transistors on
same PCB area
peak collector current
1
A
RCEsat
equivalent on-resistance
<500
mΩ
• Reduces required PCB area
• Reduced pick and place costs.
PINNING
PIN
1, 4
DESCRIPTION
TR1; TR2
APPLICATION
emitter
base
• General purpose switching and muting
• Low frequency driver circuits
• LCD backlighting
2, 5
TR1; TR2
TR1; TR2
6, 3
collector
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
6
5
6
5
4
4
handbook, halfpage
TR2
DESCRIPTION
TR1
NPN/PNP low VCEsat transistor pair in a SC-88 plastic
package.
1
2
3
1
2
3
Top view
MAM445
MARKING
Fig.1 Simplified outline SC-88 (SOT363) and
symbol.
TYPE NUMBER
PBSS2515YPN
MARKING CODE
N8*
Note
1. * = -: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
SC-88
DESCRIPTION
plastic surface mounted package; 6 leads
VERSION
PBSS2515YPN
SOT363
2005 Jan 11
2
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open emitter
open base
−
−
−
−
−
−
−
15
V
V
V
15
open collector
6
500
1
mA
A
ICM
IBM
100
200
+150
150
+150
mA
mW
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C
−65
−
°C
Tamb
−65
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
416
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2005 Jan 11
3
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB = 15 V; IE = 0 A
−
−
100
50
nA
μA
nA
VCB = 15 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
−
−
IEBO
hFE
emitter-base cut-off current
DC current gain
−
−
100
−
VCE = 2 V; IC = 10 mA
200
150
90
−
−
VCE = 2 V; IC = 100 mA; note 1
VCE = 2 V; IC = 500 mA; note 1
IC = 10 mA; IB = 0.5 mA
−
−
−
−
VCEsat
collector-emitter saturation
voltage
−
25
mV
mV
mV
mΩ
V
IC = 200 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
−
−
150
250
<500
1.1
0.9
−
−
RCEsat
VBEsat
VBEon
equivalent on-resistance
−
300
−
base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1
base-emitter turn-on voltage VCE = 2 V; IC = 100 mA; note 1
−
−
−
V
NPN transistor
fT
transition frequency
collector capacitance
IC = 100 mA; VCE = 5 V; f = 100 MHz 250
420
4.4
−
MHz
pF
Cc
VCB = 10 V; IE = Ie = 0 A; f = 1 MHz
−
6
PNP transistor
fT
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100
280
−
MHz
pF
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0 A; f = 1 MHz
−
−
10
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2005 Jan 11
4
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
MLD687
MLD689
600
1200
handbook, halfpage
handbook, halfpage
V
(1)
BE
(mV)
1000
h
FE
(1)
(2)
400
800
600
(2)
200
(3)
(3)
400
200
0
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
TR1 (NPN) VCE = 2 V.
(1) amb = 150 °C.
TR1 (NPN) VCE = 2 V.
(1) amb = −55 °C.
T
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MLD691
MLD690
3
10
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
1000
V
CEsat
(mV)
(1)
2
10
800
(2)
(1)
600
(2)
(3)
10
(3)
400
200
1
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
TR1 (NPN) IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
TR1 (NPN) IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3)
T
amb = −55 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2005 Jan 11
5
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
MLD692
MLD688
2
10
1200
handbook, halfpage
handbook, halfpage
(3)
(2)
(4)
(1)
R
I
CEsat
C
(Ω)
(mA)
(5)
(6)
10
800
(1)
(7)
(8)
(2)
(3)
1
400
(9)
(10)
−1
10
0
0
10
−1
2
3
1
10
10
10
2
4
6
8
10
(V)
I
(mA)
C
V
CE
TR1 (NPN) Tamb = 25 °C.
(1) IB = 4.6 mA.
(2) IB = 4.14 mA.
(3) IB = 3.68 mA.
(4) IB = 3.22 mA.
(5) IB = 2.76 mA.
(6)
I
B = 2.3 mA.
TR1 (NPN) IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(7) IB = 1.84 mA.
(8) IB = 1.38 mA.
(9) IB = 0.92 mA.
(10) IB = 0.46 mA.
Fig.6 Equivalent on-resistance as a function of
collector current; typical values.
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
2005 Jan 11
6
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
MLD693
MLD695
600
−1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
(1)
h
FE
−1000
(1)
(2)
400
200
0
−800
−600
(2)
(3)
(3)
−400
−200
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
(mA)
I
I
(mA)
C
C
TR2 (PNP) VCE = −2 V.
(1) amb = 150 °C.
TR2 (PNP) VCE = −2 V.
(1) amb = −55 °C.
T
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8 DC current gain as a function of collector
current; typical values.
Fig.9 Base-emitter voltage as a function of
collector current; typical values.
MLD697
MLD696
3
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
(mV)
−1000
(1)
2
−10
−800
(2)
(1)
(2)
−600
(3)
(3)
−10
−400
−200
−1
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
(mA)
I
(mA)
I
C
C
TR2 (PNP) IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
TR2 (PNP) IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3)
T
amb = −55 °C.
(3) Tamb = −55 °C.
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
2005 Jan 11
7
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
MLD694
MLD698
3
10
−1200
handbook, halfpage
handbook, halfpage
R
CEsat
(Ω)
(3)
(2)
(4)
(1)
I
C
(mA)
2
10
(5)
(6)
−800
(7)
(8)
10
(9)
−400
1
(1)
(10)
(2)
(3)
−1
−10
10
0
0
−1
2
3
−1
−10
−10
−10
(mA)
−2
−4
−6
−8
−10
(V)
I
C
V
CE
TR2 (PNP) Tamb = 25 °C.
(1) IB = −7 mA.
(2) IB = −6.3 mA.
(3) IB = −5.6 mA.
(4) IB = −4.9 mA.
(5) IB = −4.2 mA.
(6) IB = −3.5 mA.
TR2 (PNP) IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(7) IB = −2.8 mA.
(8) IB = −2.1 mA.
(9) IB = −1.4 mA.
(10) IB = −0.7 mA.
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
2005 Jan 11
8
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
p
w
M B
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
2005 Jan 11
9
NXP Semiconductors
Product data sheet
15 V low VCE(sat) NPN/PNP transistor
PBSS2515YPN
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2005 Jan 11
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/03/pp11
Date of release: 2005 Jan 11
Document order number: 9397 750 14428
相关型号：
PBSS2540FT/R
TRANSISTOR 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明