PBSS5250X,146 [NXP]
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA;
| 型号： | PBSS5250X,146 |
| 厂家： | 
NXP |
| 描述： | Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA 开关 晶体管 |
| 文件： | 总9页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS5250X
50 V, 2 A
PNP low VCEsat (BISS) transistor
Product data sheet
2004 Nov 04
Supersedes data of 2003 Jun 17
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250X
FEATURES
QUICK REFERENCE DATA
• SOT89 (SC-62) package
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
−50
−2
V
A
ICM
−5
A
RCEsat
160
mΩ
PINNING
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
PIN
1
DESCRIPTION
emitter
collector
base
2
3
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
2
1
3
DESCRIPTION
PNP low VCEsat transistor in a SOT89 plastic package.
NPN complement: PBSS4250X.
sym079
3
2
1
MARKING
Fig.1 Simplified outline (SOT89) and symbol.
TYPE NUMBER
PBSS5250X
Note
MARKING CODE(1)
*1L
1. * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
2004 Nov 04
2
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250X
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
PBSS5250X
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−50
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
V
V
V
A
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
open base
−50
−5
open collector
−2
ICM
Tj(max)
−5
IB
−0.5
Ptot
total power dissipation
Tamb ≤ 25 °C
note 1
−
−
550
1
mW
W
note 2
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
−
+150
150
+150
°C
°C
°C
Tamb
−65
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
2004 Nov 04
3
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
note 1
note 2
note 3
note 4
225
125
90
K/W
K/W
K/W
K/W
K/W
80
Rth(j-s)
thermal resistance from junction to soldering point
16
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
006aaa243
3
10
Z
duty cycle =
1.00
th(j-a)
(K/W)
0.75
0.50
0.33
0.20
2
10
0.10
0.05
10
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; standard footprint.
Fig.2 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
4
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250X
006aaa244
3
10
Z
th(j-a)
(K/W)
duty cycle =
1.00
2
10
0.75
0.50
0.33
0.20
0.10
10
0.05
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
006aaa245
3
10
Z
th(j-a)
(K/W)
duty cycle =
1.00
2
10
0.75
0.50
0.33
0.20
0.10
10
0.05
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
5
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = −50 V; IE = 0 A
VCB = −50 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off current VCE = −50 V; VBE = 0 V
MIN.
MAX.
−100
UNIT
nA
ICBO
collector-base cut-off current
−
−
−
−
−50
μA
nA
nA
ICES
IEBO
hFE
−100
−100
emitter-base cut-off current
DC current gain
VEB = −5 V; IC = 0 A
VCE = −2 V
IC = −0.1 A
200
200
200
100
−
−
IC = −0.5 A
−
IC = −1 A; note 1
−
IC = −2 A; note 1
−
VCEsat
collector-emitter saturation
voltage
IC = −0.5 A; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −2 A; IB = −100 mA
IC = −2 A; IB = −200 mA; note 1
IC = −2 A; IB = −200 mA; note 1
−90
−250
−380
−320
160
−1.1
−
mV
mV
mV
mV
mΩ
V
−
−
−
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
−
base-emitter saturation voltage IC = −2 A; IB = −100 mA
−
base-emitter turn-on voltage
transition frequency
VCE = −2 V; IC = −1 A
−1.1
100
V
IC = −100 mA; VCE = −5 V;
−
MHz
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A; f = 1 MHz
−
35
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Nov 04
6
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250X
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-08-03
06-03-16
SOT89
TO-243
SC-62
2004 Nov 04
7
NXP Semiconductors
Product data sheet
50 V, 2 A
PNP low VCEsat (BISS) transistor
PBSS5250X
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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infringement and limitation of liability, unless explicitly
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Nov 04
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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Printed in The Netherlands
R75/02/pp9
Date of release: 2004 Nov 04
Document order number: 9397 750 13886
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