PBSS5320D [NXP]
20 V low VCEsat PNP transistor; 20伏的低VCEsat晶体管PNP晶体管
| 型号： | PBSS5320D |
| 厂家： | 
NXP |
| 描述： | 20 V low VCEsat PNP transistor |
| 文件： | 总8页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
age
PBSS5320D
20 V low VCEsat PNP transistor
Product specification
2002 Jun 12
Philips Semiconductors
Product specification
20 V low VCEsat PNP transistor
PBSS5320D
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
• High current capability
SYMBOL
PARAMETER
MAX. UNIT
VCEO
IC
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
−20
−3
V
• Improved device reliability due to reduced heat
generation
A
ICM
−5
A
RCEsat
133
mΩ
APPLICATIONS
PINNING
PIN
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
DESCRIPTION
1
2
3
4
5
6
collector
collector
base
• Heavy duty battery powered equipment (motor and lamp
drivers).
emitter
collector
collector
DESCRIPTION
PNP low VCEsat transistor in a SOT457 (SC-74) plastic
package.
6
5
2
4
3
MARKING
1, 2, 5, 6
TYPE NUMBER
PBSS5320D
MARKING CODE
3
52
4
1
Top view
MAM466
Fig.1 Simplified outline (SOT457; SC-74) and
symbol.
2002 Jun 12
2
Philips Semiconductors
Product specification
20 V low VCEsat PNP transistor
PBSS5320D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current
open base
−20
−5
open collector
−3
ICM
−5
IB
−500
600
750
+150
150
+150
mA
mW
mW
°C
Ptot
total power dissipation
T
amb ≤ 25 °C; note 1
amb ≤ 25 °C; note 2
T
Tstg
Tj
storage temperature
−65
−
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
208
UNIT
K/W
K/W
Rth j-a
thermal resistance from junction to
ambient
note 1
note 2
160
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
2002 Jun 12
3
Philips Semiconductors
Product specification
20 V low VCEsat PNP transistor
PBSS5320D
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MIN.
MAX.
UNIT
nA
ICBO
collector-base cut-off current VCB = −20 V; IE = 0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−100
−50
−100
−
V
CB = −20 V; IE = 0; Tj = 150 °C
µA
IEBO
hFE
emitter-base cut-off current
DC current gain
VEB = −5 V; IC = 0
nA
VCE = −2 V; IC = −100 mA
200
200
V
CE = −2 V; IC = −500 mA
−
VCE = −2 V; IC = −1000 mA; note 1 200
CE = −2 V; IC = −2000 mA; note 1 150
−
V
−
VCEsat
collector-emitter saturation
voltage
IC = −500 mA; IB = −5 mA
−
−
−
−
−
−
−
−
−130
−80
−160
−400
−250
−400
133
−1.2
mV
mV
mV
mV
mV
mV
mΩ
V
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −2 A; IB = −20 mA; note 1
IC = −2 A; IB = −200 mA; note 1
IC = −3 A; IB = −300 mA; note 1
IC = −3 A; IB = −300 mA; note 1
IC = −2 A; IB = −200 mA; note 1
RCEsat
VBEsat
equivalent on-resistance
85
base-emitter saturation
voltage
−
VBEon
Cc
base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1
−1.2
−
−
−
−
−
V
collector capacitance
transition frequency
VCB = −10 V; IE = Ie = 0; f = 1 MHz
50
−
pF
FT
IC = −200 mA; VCE = −10 V;
100
MHz
f = 100 MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2002 Jun 12
4
Philips Semiconductors
Product specification
20 V low VCEsat PNP transistor
PBSS5320D
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
01-05-04
SOT457
SC-74
2002 Jun 12
5
Philips Semiconductors
Product specification
20 V low VCEsat PNP transistor
PBSS5320D
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Jun 12
6
Philips Semiconductors
Product specification
20 V low VCEsat PNP transistor
PBSS5320D
NOTES
2002 Jun 12
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2002 Jun 12
Document order number: 9397 750 09759
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