PBSS5320T [NXP]
20 V, 3 A PNP low VCEsat (BISS) transistor; 20 V ，3A PNP低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS5320T |
| 厂家： | 
NXP |
| 描述： | 20 V, 3 A PNP low VCEsat (BISS) transistor |
| 文件： | 总10页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5320T
20 V, 3 A
PNP low VCEsat (BISS) transistor
Product specification
2004 Jan 15
Supersedes data of 2002 Aug 08
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
SYMBOL
PARAMETER
MAX. UNIT
VCEO
IC
collector-emitter voltage
collector current (DC)
−20
−2
V
A
A
• High collector current capability
• High collector current gain
ICRP
repetitive peak collector
current
−3
• Improved efficiency due to reduced heat generation.
RCEsat
equivalent on-resistance
105
mΩ
APPLICATIONS
PINNING
PIN
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
DESCRIPTION
1
2
3
base
• Battery chargers
emitter
collector
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4320T.
handbook, halfpage
3
3
2
MARKING
1
TYPE NUMBER
PBSS5320T
MARKING CODE(1)
1
2
ZH
Top view
MAM256
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
PBSS5320T
−
2004 Jan 15
2
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
−
−
−
V
V
V
A
A
A
A
collector-emitter voltage
emitter-base voltage
open base
−20
−5
open collector
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
−2
ICRP
ICM
note 1
−3
single peak
−5
IB
−0.5
300
480
540
1.2
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2
Tamb ≤ 25 °C; note 3
Tamb ≤ 25 °C; note 4
Tamb ≤ 25 °C; notes 1 and 2
mW
mW
mW
W
Tstg
Tj
storage temperature
−65
−
+150
150
+150
°C
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
VALUE
417
UNIT
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from junction to
ambient
in free air; note 2
260
in free air; note 3
230
in free air; notes 1 and 4
104
Notes
1. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copper; tin plated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2004 Jan 15
3
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base cut-off current VCB = −20 V; IE = 0
VCB = −20 V; IE = 0; Tj = 150 °C
VEB = −5 V; IC = 0
CONDITIONS
MIN.
TYP.
MAX.
UNIT
nA
ICBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−100
−50
−100
−
µA
IEBO
hFE
emitter-base cut-off current
DC current gain
nA
VCE = −2 V; IC = −100 mA
220
220
200
150
100
−
VCE = −2 V; IC = −500 mA
−
VCE = −2 V; IC = −1 A; note 1
VCE = −2 V; IC = −2 A; note 1
VCE = −2 V; IC = −3 A; note 1
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −50 mA
−
−
−
VCEsat
collector-emitter saturation
voltage
−70
−130
−230
−210
−300
105
−1.1
−1.2
−
mV
mV
mV
mV
mV
mΩ
V
−
IC = −2 A; IB = −100 mA; note 1
IC = −2 A; IB = −200 mA; note 1
IC = −3 A; IB = −300 mA; note 1
IC = −2 A; IB = −200 mA; note 1
IC = −2 A; IB = −100 mA; note 1
IC = −3 A; IB = −300 mA; note 1
−
−
−
RCEsat
VBEsat
equivalent on-resistance
−
75
−
base-emitter saturation
voltage
−
−
−
V
VBE(on)
fT
base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1
−1.2
100
−
V
transition frequency
IC = −100 mA; VCE = −5 V;
−
−
MHz
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
50
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Jan 15
4
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
MLD876
MLD877
−1200
1000
handbook, halfpage
handbook, halfpage
h
FE
V
BE
(mV)
800
(1)
(1)
(2)
−800
600
(2)
400
(3)
−400
(3)
200
0
−10
0
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
(mA)
I
I
C
C
VCE = −2 V.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
VCE = −2 V.
(1) Tamb = −55 °C.
(2) amb = 25 °C.
(3) Tamb = 150 °C.
T
T
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MLD878
MLD879
−1400
−1400
handbook, halfpage
handbook, halfpage
V
V
BEsat
BEsat
(mV)
(mV)
−1000
−1000
(1)
(1)
(2)
(2)
(3)
−600
−600
−200
(3)
−200
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 10.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 15
5
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
MLD880
MLD881
3
3
−10
−10
handbook, halfpage
handbook, halfpage
V
V
CEsat
CEsat
(mV)
(mV)
2
2
−10
−10
(1)
(3)
(1)
(2)
(2)
−10
−1
(3)
−10
−1
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 10.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
T
T
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD882
MLD883
3
3
−10
−10
handbook, halfpage
handbook, halfpage
V
V
CEsat
CEsat
(mV)
(mV)
2
−10
(1)
(3)
(2)
2
−10
−10
−1
(1)
(3) (2)
−10
−10
−1
2
3
4
−1
2
3
I
4
−10
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
(mA)
I
C
C
IC/IB = 50.
IC/IB = 100.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 15
6
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
MLD884
2
10
handbook, halfpage
R
CEsat
(Ω)
10
1
(1)
−1
10
(2)
(3)
−2
10
−1
2
3
I
4
−10
−1
−10
−10
−10
−10
(mA)
C
IC/IB = 20.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
T
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
2004 Jan 15
7
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2004 Jan 15
8
Philips Semiconductors
Product specification
20 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5320T
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Jan 15
9
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
R75/02/pp10
Date of release: 2004 Jan 15
Document order number: 9397 750 12441
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