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PBSS8110X,135 [NXP]

PBSS8110X - 100 V, 1 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin;
PBSS8110X,135
型号： PBSS8110X,135
厂家： NXP    NXP
描述：

PBSS8110X - 100 V, 1 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin

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PBSS8110X  
100 V, 1 A NPN low VCEsat (BISS) transistor  
Rev. 02 — 11 December 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/  
TO-243) SMD plastic package.  
PNP complement: PBSS9110X.  
1.2 Features  
„ SOT89 package  
„ Low collector-emitter saturation voltage VCEsat  
„ High collector current capability: IC and ICM  
„ High efficiency leading to less heat generation  
1.3 Applications  
„ Major application segments:  
‹ Automotive 42 V power  
‹ Telecom infrastructure  
‹ Industrial  
„ Peripheral driver:  
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)  
‹ Inductive load driver (e.g. relays, buzzers and motors)  
„ DC-to-DC converter  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
100  
1
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current (DC)  
-
-
-
-
-
-
A
ICM  
peak collector current  
single pulse;  
3
A
tp ≤ 1 ms  
[1]  
RCEsat  
collector-emitter  
IC = 1 A;  
-
165  
200  
mΩ  
saturation resistance  
IB = 100 mA  
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.  
 
 
 
 
 
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
emitter  
Simplified outline  
Symbol  
2
1
2
collector  
base  
3
3
3
2
1
sym042  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PBSS8110X  
SC-62  
plastic surface mounted package; collector pad for  
good heat transfer; 3 leads  
SOT89  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking code[1]  
PBSS8110X  
*4B  
[1] * = -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
2 of 15  
 
 
 
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Conditions  
Min  
Max  
120  
100  
5
Unit  
V
collector-base voltage  
open emitter  
-
-
-
-
-
collector-emitter voltage open base  
V
emitter-base voltage  
collector current (DC)  
peak collector current  
open collector  
V
1
A
ICM  
single pulse;  
3
A
tp ≤ 1 ms  
IB  
base current (DC)  
-
300  
0.55  
1.4  
mA  
W
[1]  
[2]  
[3]  
Ptot  
total power dissipation  
Tamb ≤ 25 °C  
-
-
W
-
2.0  
W
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
150  
+150  
+150  
°C  
°C  
°C  
Tamb  
Tstg  
−65  
−65  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.  
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
006aaa408  
2.0  
(1)  
P
tot  
(W)  
1.6  
(2)  
1.2  
0.8  
0.4  
0
(3)  
0
40  
80  
120  
160  
(°C)  
T
amb  
(1) Ceramic PCB, Al2O3, standard footprint  
(2) FR4 PCB; mounting pad for collector 6cm2  
(3) FR4 PCB; standard footprint  
Fig 1. Power derating curves  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
3 of 15  
 
 
 
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
6. Thermal characteristics  
Table 6.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
227  
89  
Unit  
K/W  
K/W  
K/W  
K/W  
[1]  
[2]  
[3]  
Rth(j-a)  
thermal resistance from  
in free air  
-
-
-
-
-
-
-
-
junction to ambient  
63  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
16  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.  
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
006aaa409  
3
10  
duty cycle =  
1
Z
th(j-a)  
(K/W)  
0.75  
0.5  
2
10  
0.33  
0.2  
0.1  
0.05  
10  
0.02  
0.01  
0
1
−1  
10  
10  
−5  
−4  
−3  
−2  
−1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB; standard footprint  
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
4 of 15  
 
 
 
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
006aaa411  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle =  
1
2
10  
0.75  
0.5  
0.33  
0.2  
0.1  
10  
0.05  
0.02  
0.01  
0
1
−1  
10  
10  
−5  
−4  
−3  
−2  
−1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB; mounting pad for collector 6cm2  
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values  
006aaa410  
2
10  
duty cycle =  
1
Z
th(j-a)  
0.75  
0.5  
(K/W)  
0.33  
0.2  
10  
0.1  
0.05  
0.02  
0.01  
0
1
−1  
10  
10  
−5  
−4  
−3  
−2  
−1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
Ceramic PCB, Al2O3, standard footprint  
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
5 of 15  
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
7. Characteristics  
Table 7.  
Characteristics  
T
amb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
Max  
100  
50  
Unit  
nA  
ICBO  
collector-base cut-off VCB = 80 V; IE = 0 A  
-
-
-
-
current  
VCB = 80 V; IE = 0 A;  
μA  
Tj = 150 °C  
ICES  
IEBO  
hFE  
collector-emitter  
cut-off current  
VCE = 80 V; VBE = 0 V  
-
-
-
-
100  
100  
nA  
nA  
emitter-base cut-off  
current  
VEB = 4 V; IC = 0 A  
DC current gain  
VCE = 10 V; IC = 1 mA  
VCE = 10 V; IC = 250 mA  
VCE = 10 V; IC = 500 mA  
VCE = 10 V; IC = 1 A  
150  
-
-
150  
-
500  
-
[1]  
[1]  
100  
-
80  
-
-
-
VCEsat  
collector-emitter  
saturation voltage  
IC = 100 mA; IB = 10 mA  
IC = 500 mA; IB = 50 mA  
IC = 1 A; IB = 100 mA  
IC = 1 A; IB = 100 mA  
-
40  
120  
200  
200  
mV  
mV  
mV  
mΩ  
-
-
[1]  
[1]  
-
-
RCEsat  
VBEsat  
VBEon  
collector-emitter  
saturation resistance  
-
165  
base-emitter  
saturation voltage  
IC = 1 A; IB = 100 mA  
VCE = 10 V; IC = 1 A  
-
-
-
-
1.05  
0.9  
V
V
base-emitter turn-on  
voltage  
td  
tr  
delay time  
VCC = 10 V; IC = 0.5 A;  
IBon = 0.025 A; IBoff = −0.025 A  
-
25  
-
-
-
-
-
-
-
ns  
rise time  
-
220  
245  
365  
185  
550  
-
ns  
ton  
ts  
turn-on time  
storage time  
fall time  
-
ns  
-
ns  
tf  
-
ns  
toff  
fT  
turn-off time  
transition frequency  
-
ns  
VCE = 10 V; IC = 50 mA;  
f = 100 MHz  
100  
MHz  
Cc  
collector capacitance VCB = 10 V; IE = ie = 0 A;  
f = 1 MHz  
-
-
7.5  
pF  
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
6 of 15  
 
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
001aaa497  
001aaa495  
600  
1000  
V
BE  
(mV)  
h
FE  
(1)  
(2)  
(3)  
800  
(1)  
(2)  
400  
600  
400  
200  
200  
(3)  
0
10  
−1  
2
3
4
−1  
2
3
4
1
10  
10  
10  
10  
(mA)  
10  
1
10  
10  
10  
10  
I (mA)  
C
I
C
VCE = 10 V  
VCE = 10 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig 5. DC current gain as a function of collector  
current; typical values  
Fig 6. Base-emitter voltage as a function of collector  
current; typical values  
001aaa504  
001aaa505  
3
1
10  
V
V
CEsat  
(mV)  
CEsat  
(V)  
−1  
2
10  
10  
(1)  
(2)  
(3)  
−2  
10  
10  
10  
10  
−1  
2
3
4
−1  
2
3
4
1
10  
10  
10  
10  
(mA)  
1
10  
10  
10  
10  
I (mA)  
C
I
C
IC/IB = 10  
IC/IB = 20; Tamb = 25 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig 7. Collector-emitter saturation voltage as a  
function of collector current; typical values  
Fig 8. Collector-emitter saturation voltage as a  
function of collector current; typical values  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
7 of 15  
 
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
001aaa506  
001aaa498  
4
10  
1200  
BEsat  
V
(mV)  
V
CEsat  
(mV)  
1000  
3
2
(1)  
10  
800  
600  
400  
200  
(2)  
(3)  
10  
10  
10  
−1  
2
3
4
−1  
2
3
4
1
10  
10  
10  
10  
(mA)  
10  
1
10  
10  
10  
10  
I (mA)  
C
I
C
IC/IB = 50; Tamb = 25 °C  
IC/IB = 10  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig 9. Collector-emitter saturation voltage as a  
function of collector current; typical values  
Fig 10. Base-emitter saturation voltage as a function  
of collector current; typical values  
001aaa499  
001aaa501  
3
1200  
10  
V
BEsat  
R
CEsat  
(mV)  
(Ω)  
2
1000  
10  
800  
600  
400  
10  
1
(1)  
(2)  
(3)  
−1  
10  
−1  
2
3
4
−1  
2
3
4
10  
1
10  
10  
10  
10  
(mA)  
10  
1
10  
10  
10  
10  
I (mA)  
C
I
C
IC/IB = 20; Tamb = 25 °C  
IC/IB = 10  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig 11. Base-emitter saturation voltage as a function  
of collector current; typical values  
Fig 12. Collector-emitter saturation resistance as a  
function of collector current; typical values  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
8 of 15  
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
001aaa502  
001aaa503  
3
3
10  
10  
R
CEsat  
R
CEsat  
(Ω)  
(Ω)  
2
2
10  
10  
10  
10  
1
1
−1  
10  
−1  
10  
10  
10  
−1  
2
3
4
−1  
2
3
4
1
10  
10  
10  
10  
(mA)  
1
10  
10  
10  
10  
I (mA)  
C
I
C
IC/IB = 20; Tamb = 25 °C  
IC/IB = 50; Tamb = 25 °C  
Fig 13. Collector-emitter saturation resistance as a  
function of collector current; typical values  
Fig 14. Collector-emitter saturation resistance as a  
function of collector current; typical values  
001aaa496  
2
I
(mA) = 35  
I
C
B
(A)  
31.5  
28  
24.5  
1.6  
21  
17.5  
14  
1.2  
0.8  
0.4  
0
10.5  
7
3.5  
0
1
2
3
4
5
V
CE  
(V)  
Tamb = 25 °C  
Fig 15. Collector current as a function of collector-emitter voltage; typical values  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
9 of 15  
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
8. Test information  
I
B
input pulse  
90 %  
(idealized waveform)  
I
(100 %)  
Bon  
10 %  
I
Boff  
output pulse  
(idealized waveform)  
I
C
90 %  
I
(100 %)  
C
10 %  
t
t
t
f
t
t
r
s
d
t
t
off  
on  
006aaa003  
Fig 16. BISS transistor switching time definition  
V
V
CC  
BB  
R
R
C
B
V
o
(probe)  
(probe)  
oscilloscope  
oscilloscope  
450 Ω  
450 Ω  
R2  
V
I
DUT  
R1  
mlb826  
VCC = 10 V; IC = 0.5 A; IBon = 0.025 A; IBoff = −0.025 A  
Fig 17. Test circuit for switching times  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
10 of 15  
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
9. Package outline  
4.6  
4.4  
1.8  
1.4  
1.6  
1.4  
2.6  
2.4  
4.25  
3.75  
1.2  
0.8  
1
2
3
0.53  
0.40  
1.5  
0.48  
0.35  
0.44  
0.23  
3
Dimensions in mm  
06-08-29  
Fig 18. Package outline SOT89 (SC-62/TO-243)  
10. Packing information  
Table 8.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
1000  
-115  
4000  
PBSS8110X  
SOT89  
8 mm pitch, 12 mm tape and reel  
-135  
[1] For further information and the availability of packing methods, see Section 15.  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
11 of 15  
 
 
 
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
11. Soldering  
4.75  
2.25  
2.00  
1.90  
1.20  
solder lands  
solder resist  
0.85  
0.20  
1.20  
1.20  
occupied area  
1.70  
solder paste  
4.60  
4.85  
Dimensions in mm  
0.50  
1.20  
1.00  
(3x)  
3
2
1
msa442  
0.60 (3x)  
0.70 (3x)  
3.70  
3.95  
Reflow soldering is the only recommended soldering method  
Fig 19. Reflow soldering footprint SOT89 (SC-62/TO-243)  
12. Mounting  
32 mm  
30 mm  
32 mm  
20  
2.5 mm  
1 mm  
mm  
40  
mm  
40  
mm  
3 mm  
1 mm  
2.5 mm  
2.5 mm  
0.5 mm  
1 mm  
0.5 mm  
5 mm  
5 mm  
3.96 mm  
3.96 mm  
1.6 mm  
001aaa234  
1.6 mm  
001aaa235  
Fig 20. FR4 PCB, standard footprint  
Fig 21. FR4 PCB, mounting pad for  
collector 6cm2  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
12 of 15  
 
 
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
13. Revision history  
Table 9.  
Revision history  
Document ID  
PBSS8110X_2  
Modifications:  
Release date  
Data sheet status  
Change notice  
Supersedes  
20091211  
Product data sheet  
-
PBSS8110X_1  
• This data sheet was changed to reflect the new company name NXP Semiconductors,  
including new legal definitions and disclaimers. No changes were made to the technical  
content.  
• Figure 5: updated  
• Figure 7: VCEsat axis unit amended from mV to V  
• Figure 15: updated  
• Figure 18 “Package outline SOT89 (SC-62/TO-243)”: updated  
• Figure 19 “Reflow soldering footprint SOT89 (SC-62/TO-243)”: updated  
PBSS8110X_1  
20050511  
Product data sheet  
-
-
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
13 of 15  
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
14. Legal information  
14.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
14.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
14.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
14.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
15. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PBSS8110X_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 11 December 2009  
14 of 15  
 
 
 
 
 
 
PBSS8110X  
NXP Semiconductors  
100 V, 1 A NPN low VCEsat (BISS) transistor  
16. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Test information. . . . . . . . . . . . . . . . . . . . . . . . 10  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11  
Packing information . . . . . . . . . . . . . . . . . . . . 11  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
14.1  
14.2  
14.3  
14.4  
15  
16  
Contact information. . . . . . . . . . . . . . . . . . . . . 14  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 11 December 2009  
Document identifier: PBSS8110X_2  
 

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