PHD78NQ03LT [NXP]
N-channel enhancement mode field-effect transistor; N沟道增强模式音响场效晶体管
| 型号： | PHD78NQ03LT |
| 厂家： | 
NXP |
| 描述： | N-channel enhancement mode field-effect transistor |
| 文件： | 总14页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 November 2001
Product data
1. Product profile
1.1 Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHP78NQ03LT in SOT78 (TO-220AB)
PHB78NQ03LT in SOT404 (D2-PAK)
PHD78NQ03LT in SOT428 (D-PAK).
1.2 Features
■ Low on-state resistance
■ Fast switching
1.3 Applications
■ Computer motherboards
■ DC to DC converters
1.4 Quick reference data
■ VDS = 25 V
■ ID = 75 A (T = 25 °C)
mb
■ Ptot = 93 W (T = 25 °C)
■ RDSon = 9 mΩ (T = 25 °C)
mb
j
2. Pinning information
Table 1:
Pinning - SOT78, SOT404, SOT428 simplified outlines and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
mb
mb
mb
[1]
2
drain (d)
d
s
3
source (s)
mb
mounting base,
connected to
drain (d)
g
2
2
1
3
MBB076
1
3
MBK116
Top view
MBK091
MBK106
1
2 3
SOT78 (TO-220AB) SOT404 (D2-PAK)
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
3. Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
25
Unit
V
VDS
drain-source voltage (DC)
Tj = 25 to 175 °C
-
-
-
-
VDGR
VGS
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
Tj = 25 to 175 °C; RGS = 20 kΩ
25
V
±15
±20
V
VGSM
tp ≤ 50 µs; pulsed;
V
duty cycle 25 %; Tj ≤ 150 °C
ID
drain current (DC)
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; VGS = 10 V
-
61
A
-
43
A
-
75
A
Tmb = 100 °C; VGS = 10 V
-
53
A
IDM
Ptot
Tstg
Tj
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
-
228
93
A
total power dissipation
storage temperature
-
W
°C
°C
−55
−55
+175
+175
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Tmb = 25 °C
-
-
75
A
A
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
228
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 14 November 2001
2 of 14
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa24
120
120
I
der
P
der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
200
(oC)
0
50
100
150
200
(oC)
T
mb
T
mb
Ptot
ID
Pder
=
× 100%
Ider
=
× 100%
-----------------------
-------------------
P
I
°
°
tot(25 C)
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03aaa175
3
10
I
D
(A)
R
= V
/ I
DS D
DSon
tp = 10 µs
2
10
100 µs
1 ms
10
DC
10 ms
100 ms
1
2
1
10
10
V
(V)
DS
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 14 November 2001
3 of 14
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
4. Thermal characteristics
Table 3:
Thermal characteristics
Symbol Parameter
Conditions
Value Unit
Rth(j-mb) thermal resistance from junction to mounting
base
Figure 4
1.6
K/W
Rth(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
60
50
K/W
K/W
mounted on a printed circuit board; minimum
footprint; SOT404 and SOT428 packages
4.1 Transient thermal impedance
03ag18
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
-1
10
10
0.05
t
p
P
δ =
T
0.02
single pulse
t
t
p
T
-2
-5
10
-4
10
-3
10
-2
10
-1
10
1
10
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 14 November 2001
4 of 14
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
5. Characteristics
Table 4:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
25
22
-
-
-
-
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
drain-source leakage current
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
1
1.5
2
V
V
V
Tj = 175 °C
0.5
-
-
-
-
Tj = −55 °C
2.3
IDSS
VDS = 25 V; VGS = 0 V
Tj = 25 °C
-
-
-
0.05 10
µA
Tj = 175 °C
-
500 µA
IGSS
gate-source leakage current
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
10
100 nA
RDSon
drain-source on-state resistance
-
-
11.5 13.5 mΩ
20.7 24.3 mΩ
Tj = 175 °C
VGS = 10 V; ID = 25 A;
Tj = 25 °C
-
7.65
9
mΩ
Dynamic characteristics
gfs
forward transconductance
VDS = 25 V; ID = 50 A
-
-
-
-
-
-
-
-
-
-
-
34
-
S
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
ID = 50 A; VDD = 15 V; VGS = 5 V; Figure 13
13
-
nC
nC
nC
pF
pF
pF
ns
gate-source charge
gate-drain (Miller) charge
input capacitance
4.8
4.2
-
5.6
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11
1074 -
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
389
156
20
-
-
VDD = 15 V; ID = 25 A; VGS = 10 V;
RG = 5.6 Ω; resistive load
33
92
130 ns
td(off)
tf
turn-off delay time
turn-off fall time
30
48
60
ns
ns
40
Source-drain diode
VSD
trr
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
-
-
-
0.95 1.2
V
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs; VDS = 25 V
40
32
-
-
ns
nC
Qrr
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 14 November 2001
5 of 14
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
003aaa169
003aaa170
60
40
10 V
4 V
4.5 V
I
I
D
6 V
5 V
D
(A)
30
(A)
40
3.5 V
= 3 V
20
ο
T = 175
C
j
ο
20
T = 25
j
C
V
GS
10
0
0
3
4
0
0
0.4
0.8
1.2
1.6
V
2
2
V
(V)
GS
(V)
DS
Tj = 25 °C
Tj = 25 °C and 175 °C; VDS ≥ ID x RDSON
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa27
2
003aaa171
60
a
3.5 V
V
= 3 V
GS
R
DSon
(mΩ)
1.6
40
1.2
0.8
0.4
0
20
0
4 V
5 V
10 V
(A)
6 V
0
10
20
30
40
50
-60
0
60
120
180
T (oC)
I
D
j
Tj = 25 °C
RDSon
a =
----------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 14 November 2001
6 of 14
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa33
03aa36
2.5
-1
10
V
I
GS(th)
D
(V)
(A)
max
2
-2
10
typ
-3
1.5
10
min
typ
max
min
-4
-5
-6
1
10
10
10
0.5
0
-60
0
60
120
180
0
0.5
1
1.5
2
2.5
V
3
(V)
T (oC)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
003aaa172
003aaa173
4
40
10
I
S
C
(A)
(pF)
30
ο
T = 175
j
C
C
iss
20
3
10
ο
T = 25
j
C
C
oss
10
0
C
rss
2
10
1.6
0
1.2
2
0.4
0.8
1
10
10
V
(V)
SD
V
(V)
DS
VGS = 0 V; f = 1 MHz
Tj = 25 °C and 175 °C; VGS = 0 V
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 14 November 2001
7 of 14
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
003aaa174
8
6
4
2
0
V
GS
(V)
20
(nC)
0
4
8
12
16
Q
G
Tj = 25 °C; ID = 50 A; VDD = 15 V
Fig 13. Gate-source voltage as a function of gate charge; typical values.
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 14 November 2001
8 of 14
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
6. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
base
D
1
D
(1)
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
(1)
2
e
A
b
D
E
L
D
L
1
A
c
UNIT
p
q
Q
1
1
1
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-46
00-09-07
01-02-16
SOT78
3-lead TO-220AB
Fig 14. SOT78 (TO-220AB).
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 14 November 2001
9 of 14
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads
(one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-06-25
01-02-12
SOT404
Fig 15. SOT404 (D2-PAK)
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 14 November 2001
10 of 14
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
seating plane
y
A
A
E
A
2
A
b
D
1
1
2
mounting
base
E
1
D
H
E
L
2
2
L
1
L
1
3
b
b
w
M
A
c
1
e
e
1
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
b
E
H
E
max.
D
L
1
min.
A
max.
E
max.
y
D
max.
1
1
(1)
1
A
A
b
2
UNIT
mm
b
c
e
e
1
L
L
w
2
1
2
max.
max.
min.
max.
0.65 0.89
0.45 0.71
0.7
0.5
2.38
2.22
0.89 1.1
0.71 0.9
5.36
5.26
0.4 6.22
0.2 5.98
6.73
6.47
10.4 2.95
9.6
2.55
4.81
4.45
4.57
0.2
0.2
4.0 2.285
0.5
Note
1. Measured from heatsink back to lead.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
98-04-07
99-09-13
SOT428
TO-252
SC-63
Fig 16. SOT428 (D-PAK)
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 14 November 2001
11 of 14
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
7. Revision history
Table 5:
Revision history
CPCN
Rev Date
Description
01 20011114
-
Product data; initial version.
9397 750 08916
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 14 November 2001
12 of 14
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
8. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
9. Definitions
10. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
13 of 14
9397 750 08916
Product data
Rev. 01 — 14 November 2001
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
Philips Semiconductors
Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
4.1
5
6
7
8
9
10
11
© Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 14 November 2001
Document order number: 9397 750 08916
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