PMEG2005AEV [NXP]
Very low VF MEGA Schottky barrier rectifiers; 非常低VF MEGA肖特基势垒整流器
| 型号： | PMEG2005AEV |
| 厂家： | 
NXP |
| 描述： | Very low VF MEGA Schottky barrier rectifiers |
| 文件： | 总10页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
Very low VF MEGA Schottky barrier
rectifiers
Product specification
2003 Aug 20
Philips Semiconductors
Product specification
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
FEATURES
QUICK REFERENCE DATA
• Very low forward voltage
• High surge current
SYMBOL
PARAMETER
forward current
MAX. UNIT
IF
0.5
A
• Ultra small plastic SMD package.
VR
reverse voltage
PMEG2005AEV
PMEG3005AEV
PMEG4005AEV
20
30
40
V
V
V
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Voltage clamping
PINNING
• Inverse polarity protection
• Low power consumption applications.
PIN
DESCRIPTION
cathode
cathode
1
2
3
4
5
6
DESCRIPTION
anode
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.
anode
cathode
cathode
handbook, halfpage
6
5
4
1, 2
5, 6
3, 4
MHC310
1
2
3
Fig.1 Simplified outline (SOT666 and symbol).
MARKING
TYPE NUMBER
PMEG2005AEV
MARKING CODE
G1
G2
G3
PMEG3005AEV
PMEG4005AEV
RELATED PRODUCTS
TYPE NUMBER
DESCRIPTION
FEATURE
PMEGxx05AEA
PMEG2005EB
PMEG2010EA
0.5 A; 20/30/40 V very low VF MEGA Schottky rectifier
0.5 A; 20 V very low VF MEGA Schottky rectifier
1 A; 20 V very low VF MEGA Schottky rectifier
SOD323 (SC-76) package
SOD523 (SC-79) package
higher forward current
2003 Aug 20
2
Philips Semiconductors
Product specification
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
PMEG2005AEV
−
−
−
−
−
−
−
20
V
V
V
A
A
A
PMEG3005AEV
30
PMEG4005AEV
40
IF
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
junction temperature
note 1
0.5
IFRM
IFSM
Tj
tp ≤ 1 ms; δ ≤ 0.5; note 2
tp = 8 ms; square wave; note 2
note 3
3.5
10
150
+150
+150
°C
°C
°C
Tamb
Tstg
operating ambient temperature
storage temperature
note 3
−65
−65
Notes
1. Refer to SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel.
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
(PR) are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR
and IF(AV) rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
405
215
80
K/W
K/W
K/W
Rth j-s
thermal resistance from junction to
soldering point
Notes
1. Refer to SOT666 standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF(AV) rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
2003 Aug 20
3
Philips Semiconductors
Product specification
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
PMEG2005AEV PMEG3005AEV PMEG4005AEV
UNIT
SYMBOL
PARAMETER
CONDITIONS
IF = 0.1 mA
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
VF
forward voltage
90
130
190
240
330
390
40
90
130
200
250
340
430
30
95
130
210
270
350
470
20
mV
mV
mV
mV
mV
µA
µA
µA
µA
pF
IF = 1 mA
150
210
280
355
15
150
215
285
380
12
155
220
295
420
7
IF = 10 mA
IF = 100 mA
IF = 500 mA
IR
continuous reverse VR = 10 V; note 1
current
VR = 20 V; note 1
40
200
−
−
−
−
−
VR = 30 V; note 1
VR = 40 V; note 1
−
40
150
−
−
−
−
−
−
30
43
100
50
Cd
diode capacitance
VR = 1 V; f = 1 MHz 66
80
55
70
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2003 Aug 20
4
Philips Semiconductors
Product specification
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
GRAPHICAL DATA
MDB675
MDB676
3
5
10
10
handbook, halfpage
handbook, halfpage
I
I
R
(µA)
F
(mA)
(1)
(2)
4
3
2
10
2
10
10
10
(1)
(2)
(3)
10
1
(3)
5
10
1
−1
10
0
0.2
0.4
0.6
0
10
15
20
V
(V)
F
V
(V)
R
PMEG2005AEV
PMEG2005AEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3)
Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
MDB677
150
handbook, halfpage
C
d
(pF)
100
50
0
0
5
10
15
20
V
(V)
R
PMEG2005AEV
f = 1 MHz; Tamb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
5
Philips Semiconductors
Product specification
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
MDB672
MDB673
5
3
10
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
I
F
(mA)
(1)
(2)
4
3
2
10
2
10
10
10
(1)
(2)
(3)
10
1
(3)
10
1
−1
10
0
0.2
0.4
0.6
0
10
20
30
V
(V)
V
(V)
R
F
PMEG3005AEV
PMEG3005AEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.5 Forward current as a function of forward
voltage; typical values.
Fig.6 Reverse current as a function of reverse
voltage; typical values.
MDB674
120
handbook, halfpage
C
d
(pF)
80
40
0
0
5
10
15
20
V
(V)
R
PMEG3005AEV
f = 1 MHz; Tamb = 25 °C.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
6
Philips Semiconductors
Product specification
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
MDB669
MDB670
5
3
10
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
I
F
(mA)
(1)
(2)
4
3
2
10
2
10
10
10
(1)
(2)
(3)
10
1
10
1
(3)
10
−1
10
0
0.2
0.4
0.6
0
20
30
40
V
(V)
V
(V)
R
F
PMEG4005AEV
PMEG4005AEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.8 Forward current as a function of forward
voltage; typical values.
Fig.9 Reverse current as a function of reverse
voltage; typical values.
MDB671
100
handbook, halfpage
C
d
(pF)
80
60
40
20
0
0
5
10
15
20
V
(V)
R
PMEG4005AEV
f = 1 MHz; Tamb = 25 °C.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
2003 Aug 20
7
Philips Semiconductors
Product specification
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
01-01-04
01-08-27
SOT666
2003 Aug 20
8
Philips Semiconductors
Product specification
Very low VF MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Aug 20
9
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp10
Date of release: 2003 Aug 20
Document order number: 9397 750 11687
相关型号：
PMEG2005AEV,115
PMEG2005AEV; PMEG3005AEV; PMEG4005AEV - Very low VF MEGA Schottky barrier rectifiers SOT 6-Pin
NXP
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