TDA1011AU [NXP]
IC 6.5 W, 1 CHANNEL, AUDIO AMPLIFIER, PSFM9, PLASTIC, SOT-110B, SIP-9, Audio/Video Amplifier;
| 型号： | TDA1011AU |
| 厂家： | 
NXP |
| 描述： | IC 6.5 W, 1 CHANNEL, AUDIO AMPLIFIER, PSFM9, PLASTIC, SOT-110B, SIP-9, Audio/Video Amplifier 放大器 功率放大器 |
| 文件： | 总14页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA1011
2 to 6 W audio power amplifier
November 1982
Product specification
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
The TDA1011 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line (SIL) plastic package. The device
is especially designed for portable radio and recorder applications and delivers up to 4 W in a 4 Ω load impedance. The
device can deliver up to 6 W into 4 Ω at 16 V loaded supply in mains-fed applications. The maximum permissible supply
voltage of 24 V makes this circuit very suitable for d.c. and a.c. apparatus, while the very low applicable supply voltage
of 3,6 V permits 6 V applications. Special features are:
• single in-line (SIL) construction for easy mounting
• separated preamplifier and power amplifier
• high output power
• thermal protection
• high input impedance
• low current drain
• limited noise behaviour at radio frequencies
QUICK REFERENCE DATA
Supply voltage range
Peak output current
V
3,6 to 20 V
3 A
P
I
max.
OM
Output power at d = 10%
tot
V = 16 V; R = 4 Ω
P
P
P
P
typ.
typ.
typ.
typ.
typ.
6,5 W
4,2 W
2,3 W
1,0 W
0,2 %
P
L
o
V = 12 V; R = 4 Ω
P
L
o
V = 9 V; R = 4 Ω
P
L
o
V = 6 V; R = 4 Ω
P
L
o
Total harmonic distortion at P = 1 W; R = 4 Ω
d
tot
o
L
Input impedance
preamplifier (pin 8)
power amplifier (pin 6)
Total quiescent current
|Z |
>
100 kΩ
20 kΩ
14 mA
i
|Z |
typ.
typ.
i
I
tot
Operating ambient temperature
Storage temperature
T
T
−25 to + 150 °C
−55 to +150 °C
amb
stg
PACKAGE OUTLINE
9-lead SIL; plastic (SOT110B); SOT110-1; 1996 July 23.
November 1982
2
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
November 1982
3
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage
V
max.
max.
24 V
3 A
P
Peak output current
I
OM
Total power dissipation
Storage temperature
see derating curve Fig.2
T
T
−55 to + 150 °C
−25 to + 150 °C
stg
Operating ambient temperature
A.C. short-circuit duration of load
amb
during sine-wave drive; V = 12 V
t
max.
100 hours
P
sc
Fig.2 Power derating curve.
HEATSINK DESIGN
Assume V = 12 V; R = 4 Ω; T
= 60 °C maximum; P = 3,8 W.
o
P
L
amb
The maximum sine-wave dissipation is 1,8 W.
The derating of 10 K/W of the package requires the following external heatsink (for sine-wave drive):
150 – 60
R
= R
+ R
+ R =
th h-a
= 50 K/W.
----------------------
th j-a
th j-tab
th tab-h
1, 8
= 1 K/W, R = 50 − (10 + 1) = 39 K/W.
th h-a
Since R
= 10 K/W and R
th j-tab
th tab-h
November 1982
4
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
D.C. CHARACTERISTICS
Supply voltage range
V
3,6 to 20 V
P
Repetitive peak output current
I
<
typ.
<
2 A
ORM
14 mA
22 mA
Total quiescent current at V = 12 V
I
P
tot
A.C. CHARACTERISTICS
T
= 25 °C; V = 12 V; R = 4 Ω; f = 1 kHz unless otherwise specified; see also Fig.3.
P L
amb
A.F. output power at d = 10% (note 1)
tot
with bootstrap:
V = 16 V; R = 4 Ω
P
P
typ.
>
6,5 W
P
L
o
3,6 W
4,2 W
2,3 W
1,0 W
V = 12 V; R = 4 Ω
P
L
o
typ.
typ.
typ.
V = 9 V; R = 4 Ω
P
P
P
L
o
V = 6 V; R = 4 Ω
P
L
o
without bootstrap:
V = 12 V; R = 4 Ω
P
typ.
typ.
typ.
typ.
3,0 W
23 dB
P
L
o
Voltage gain:
preamplifier (note 2)
power amplifier
total amplifier
G
G
G
v1
21 to 25 dB
29 dB
v2
27 to 31 dB
52 dB
v tot
50 to 54 dB
0,3 %
typ.
<
Total harmonic distortion at P = 1,5 W
d
tot
o
1 %
Frequency response; −3 dB (note 3)
B
60 Hz to 15 kHz
Input impedance:
>
100 kΩ
200 kΩ
20 kΩ
1 kΩ
preamplifier (note 4)
|Z |
i1
typ.
typ.
typ.
power amplifier
|Z |
i2
Output impedance preamplifier
Output voltage preamplifier (r.m.s. value)
|Z |
o1
d
< 1% (note 2)
V
>
0,7 V
tot
o(rms)
Noise output voltage (r.m.s. value; note 5)
R = 0 Ω
V
V
typ.
typ.
<
0,2 mV
0,6 mV
1,4 mV
S
n(rms)
n(rms)
R = 10 kΩ
S
Noise output voltage at f = 500 kHz (r.m.s. value)
B = 5 kHz; R = 0 Ω
V
typ.
8 µV
S
n(rms)
November 1982
5
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
Ripple rejection (note 6)
f = 1 to 10 kHz
RR
RR
typ.
>
42 dB
35 dB
35 mA
f = 100 Hz; C2 = 1 µF
Bootstrap current at onset of clipping; pin 4 (r.m.s. value)
I
typ.
4(rms)
Notes
1. Measured with an ideal coupling capacitor to the speaker load.
2. Measured with a load resistor of 20 kΩ.
3. Measured at P = 1 W ; the frequency response is mainly determined by C1 and C3 for the low frequencies and by
o
C4 for the high frequencies.
4. Independent of load impedance of preamplifier.
5. Unweighted r.m.s. noise voltage measured at a bandwidth of 60 Hz to 15 kHz (12 dB/octave).
6. Ripple rejection measured with a source impedance between 0 and 2 kΩ (maximum ripple amplitude: 2 V).
7. The tab must be electrically floating or connected to the substrate (pin 9).
Fig.3 Test circuit.
November 1982
6
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
APPLICATION INFORMATION
Fig.4 Circuit diagram of a 4 W amplifier.
Fig.5 Total quiescent current as a function of supply voltage.
7
November 1982
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
Fig.6 Track side of printed-circuit board used for the circuit of Fig.4; p.c. board dimensions 62 mm × 48 mm.
Fig.7 Component side of printed-circuit board showing component layout used for the circuit of Fig.4.
November 1982
8
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
Fig.8 Total harmonic distortion as a function of output power across R ; _____ with bootstrap;
L
− − − without bootstrap; f = 1 kHz; typical values. The available output power is 5% higher when measured
at pin 2 (due to series resistance of C10).
Fig.9 Output power across R as a function of supply voltage with bootstrap; d = 10%; typical values.
L
tot
The available output power is 5% higher when measured at pin 2 (due to series resistance of C10).
November 1982
9
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
Fig.10 Voltage gain as a function of frequency; P relative to 0 dB = 1 W; V = 12 V; R = 4 Ω.
o
P
L
Fig.11 Total harmonic distortion as a function of frequency; P = 1 W; V = 12 V; R = 4 Ω.
o
P
L
November 1982
10
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
Fig.12 Ripple rejection as a function of R2 (see Fig.4); R = 0; typical values.
S
Fig.13 Noise output voltage as a function of R2 (see Fig.4); measured according to A-curve; capacitor C5 is
adapted for obtaining a constant bandwidth.
November 1982
11
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
Fig.14 Noise output voltage as a function of frequency; curve a: total amplifier; curve b: power amplifier;
B = 5 kHz; R = 0; typical values.
S
Fig.15 Voltage gain as a function of R2 (see Fig.4).
November 1982
12
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
PACKAGE OUTLINE
SIL9MPF: plastic single in-line medium power package with fin; 9 leads
SOT110-1
D
D
1
q
A
2
P
P
1
A
3
q
2
q
1
A
A
4
E
pin 1 index
c
L
1
9
b
Q
e
Z
b
w
M
2
b
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
Z
max.
A
max.
2
(1)
(1)
E
UNIT
A
A
b
b
b
c
D
D
e
L
P
P
Q
q
q
q
2
w
A
3
4
1
2
1
1
1
18.5
17.8
8.7 15.8 1.40 0.67 1.40 0.48 21.8 21.4 6.48
8.0 15.4 1.14 0.50 1.14 0.38 21.4 20.7 6.20
3.9 2.75 3.4 1.75 15.1
3.4 2.50 3.2 1.55 14.9
4.4
4.2
5.9
5.7
2.54
mm
3.7
0.25 1.0
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-02-25
SOT110-1
November 1982
13
Philips Semiconductors
Product specification
2 to 6 W audio power amplifier
TDA1011
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
SOLDERING
Introduction
specified maximum storage temperature (T
). If the
stg max
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 1982
14
相关型号：
TDA1011U
IC 6.5 W, 1 CHANNEL, AUDIO AMPLIFIER, PSFM9, PLASTIC, SOT-110B, SIP-9, Audio/Video Amplifier
NXP
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