AFGB40T65RQDN [ONSEMI]
IGBT - 650 V 40 A - Short circuit rated FS4 - Automotive qualified;
| 型号： | AFGB40T65RQDN |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 40 A - Short circuit rated FS4 - Automotive qualified 双极性晶体管 |
| 文件： | 总10页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
IGBT for Automotive
Applications
BV
V
TYP
I
C
CES
CE(sat)
650 V
1.55 V
40 A
C
650 V, 40 A
AFGB40T65RQDN
Using novel field stop IGBT technology, onsemi’s new series of
FS4 IGBTs offer the optimum performance for automotive
applications. This technology is Short circuit rated and offers high
figure of merit with low conduction and switching losses.
G
E
Features
• Maximum Junction Temperature: T = 175°C
C
J
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
G
E
2
D PAK
• Low Saturation Voltage: V
= 1.55 V (Typ.) @ I = 40 A
C
CE(Sat)
3 LEAD
CASE 418AJ
• 100% of the Parts Tested for ILM (Note 2)
• High Input Impedance
• Fast Switching
• Tightened Parameter Distribution
• This Device is Pb−Free and RoHS Compliant
MARKING DIAGRAM
&Y&Z&3&K
AFGB40
T65RQDN
Typical Applications
• E−compressor for HEV/EV
• PTC Heater for HEV/EV
&Y
&Z
&3
&K
= Logo
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Traceability Code
AFGB40T65RQDN = Specific Device Code
ORDERING INFORMATION
†
Device
Package
Shipping
AFGB40T65RQDN
D2PAK
800 Units /
(TO−263)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
October, 2021 − Rev. 0
AFGB40T65RQDN/D
AFGB40T65RQDN
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
C
Parameter
Symbol
Value
Unit
V
Collector to Emitter Voltage
V
CES
GES
650
Gate to Emitter Voltage
V
20
30
V
Transient Gate to Emitter Voltage
T
pulse
= 5 ms, D < 0.10
Collector Current (Note 1)
I
C
A
@T = 25°C
68
40
C
@T = 100°C
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
Diode Forward Current (Note 1)
I
160
160
A
A
A
LM
I
CM
I
F
@T = 25°C
68
40
C
@T = 100°C
C
Pulsed Diode Maximum Forward Current
I
160
A
A
FM
Non−Repetitive Forward Surge Current
I
F, SM
(Half*Sine Pulse, tp = 8.3 ms, T = 25°C)
136
118
C
(Half*Sine Pulse, tp = 8.3 ms, T = 150°C)
C
Short Circuit Withstand Time
T
ms
SC
V
GE
= 15 V, V = 400 V, T = 150°C
5
CC
C
Maximum Power Dissipation
@T = 25°C
P
D
W
339.37
169.68
C
@T = 100°C
C
Operating Junction and Storage Temperature Range
T , T
*55 to +175
°C
°C
J
STG
Maximum Lead Temp. for Soldering Purposes, 1/8″ from case for 5 seconds
T
L
265
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Value limited by bond wire.
2. V = 400 V, V = 15 V, I = 120 A, R = 100 W, Inductive Load, 100% Tested.
CC
GE
C
G
3. Repetitive rating: pulse width limited by max. Junction temperature.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Min
−
Typ
0.34
0.79
−
Max
0.44
1.03
40
Unit
Thermal Resistance Junction−to−Case, for IGBT
Thermal Resistance Junction−to−Case, for Diode
Thermal Resistance Junction−to−Ambient
R
θJC
R
θJC
R
θJA
°C/W
−
−
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2
AFGB40T65RQDN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−to−Emitter Breakdown Voltage,
Gate−Emitter Short−Circuited
BV
V
GE
V
GE
V
CE
V
GE
= 0 V, I = 1 mA
650
−
−
0.62
−
−
V
V/°C
mA
CES
C
Temperature Coefficient of Breakdown
Voltage
DBV
DT
/
= 0 V, I = 1 mA
−
CES
J
C
Collector−Emitter Cut−Off Current,
Gate−Emitter Short−Circuited
I
= V
= V
, V = 0 V
−
30
400
CES
CES
GE
Gate Leakage Current, Collector−Emitter
Short−Circuited
I
, V = 0 V
−
−
nA
GES
GES
CE
ON CHARACTERISTICS
Gate−Emitter Threshold Voltage
Collector−Emitter Saturation Voltage
V
V
= V , I = 40 mA
3.75
−
4.90
1.55
1.90
6.05
1.82
−
V
V
V
GE(th)
GE
CE
C
V
I
C
C
= 40 A, V = 15 V, T = 25°C
GE J
CE(sat)
I
= 40 A, V = 15 V, T = 175°C
−
GE
J
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
= 30 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
2100
71
9
−
−
−
−
−
−
−
pF
ies
CE
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
Gate Resistance
C
res
R
FREQ = 1 MHz
= 400 V, I = 40 A, V = 15 V
14
51
17
14
W
g
Gate Charge Total
Q
V
CE
nC
g
C
GE
Gate–Emitter Charge
Gate–Collector Charge
Q
Q
ge
gc
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−On Delay Time
Rise Time
t
T = 25°C, V = 400 V, I = 20 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
21
21
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
d(on)
J
CC
C
R = 3 W, V = 15 V,
g
GE
t
r
Inductive Load
Turn-Off Delay Time
Fall Time
t
77
d(off)
t
f
94
Turn-On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
E
on
E
off
0.47
0.42
0.89
22
mJ
ns
E
ts
t
t
T = 25°C, V = 400 V, I = 40 A,
J CC C
d(on)
R = 3 W, V = 15 V,
g
GE
t
r
45
Inductive Load
Turn-Off Delay Time
Fall Time
66
d(off)
t
f
74
Turn-On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
1.18
0.75
1.93
20
mJ
ns
E
ts
t
t
T = 175°C, V = 400 V, I = 20 A,
J CC C
d(on)
R = 3 W, V = 15 V,
g
GE
t
r
24
Inductive Load
Turn-Off Delay Time
Fall Time
96
d(off)
t
f
192
0.79
0.88
1.67
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
on
E
off
mJ
E
ts
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3
AFGB40T65RQDN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated) (continued)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
t
t
T = 175°C, V = 400 V, I = 40 A,
−
−
−
−
−
−
−
24
51
−
−
−
−
−
−
−
ns
Turn-On Delay Time
Rise Time
d(on)
J
CC
C
R = 3 W, V = 15 V,
g
GE
t
r
Inductive Load
Turn-Off Delay Time
Fall Time
80
d(off)
t
f
152
1.71
1.37
3.08
Turn−On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
DIODE CHARACTERISTICS
Diode Forward Voltage
E
on
E
off
mJ
V
E
ts
V
F
T = 25°C, I = 40 A
−
−
1.68
1.75
2.10
J
F
T = 175°C, I = 40 A
−
J
F
DIODE SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Reverse Recovery Energy
E
T = 25°C, V = 400 V,
−
−
−
−
−
−
−
−
−
−
−
−
59
40
−
−
−
−
−
−
−
−
−
−
−
−
mJ
ns
nC
mJ
ns
nC
mJ
ns
nC
mJ
ns
nC
REC
J
R
I = 20 A, di /dt = 1000 A/ms
F
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
T
rr
Q
413
85
rr
E
REC
T = 25°C, V = 400 V,
J R
I = 40 A, di /dt = 1000 A/ms
F
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
T
52
rr
Q
543
203
73
rr
E
REC
T = 175°C, V = 400 V,
J R
I = 20 A, di /dt = 1000 A/ms
F
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
T
rr
Q
984
282
96
rr
E
REC
T = 175°C, V = 400 V,
J R
I = 40 A, di /dt = 1000 A/ms
F
F
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
T
rr
Q
1334
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
AFGB40T65RQDN
TYPICAL CHARACTERISTICS
160
120
160
20 V
20 V
T = 25°C
J
T = 175°C
J
15 V
12 V
15 V
120
12 V
10 V
= 8 V
80
40
0
80
40
0
10 V
V
GE
V
= 8 V
GE
0
1
2
3
4
5
0
1
2
3
4
5
6
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Typical Output Characteristics (255C)
Figure 2. Typical Output Characteristics (1755C)
160
120
120
V
GE
= 15 V
Common Emitter
= 20 V
T = 25°C
J
V
CE
T = 25°C
J
80
40
0
T = 175°C
J
T = 175°C
80
40
0
J
0
1
2
3
4
5
0
2
4
6
8
10
12
14
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Typical Transfer Characteristics
3.5
3.0
2.5
2.0
10K
1K
V
GE
= 0 V, f = 1 MHz
C
Common Emitter
iss
V
GE
= 15 V
I
C
= 80 A
C
oss
100
C
rss
I
C
= 40 A
10
1
1.5
1.0
I
C
= 20 A
−100
−50
0
50
100
150
200
0.1
1
10
30
T , JUNCTION TEMPERATURE (°C)
C
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Saturation Voltage vs. Case
Figure 6. Capacitance Characteristics
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5
AFGB40T65RQDN
TYPICAL CHARACTERISTICS (Continued)
15
12
9
300
10 ms 1 ms
100 ms
10 ms
Common Emitter
= 40 A
V
CC
= 200 V
I
100
10
1
C
DC
300 V
400 V
6
*Note:
1. T = 25°C
C
3
0
2. T = 175°C
J
3. Single Pulse
0.1
0
10
20
30
40
50
1
10
100
1000
Q , GATE CHARGE (nC)
g
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
200
100
1000
100
V
I
= 400 V, V = 15 V
GE
= 40 A
V
I
= 400 V, V = 15 V
= 40 A
CC
CC
GE
C
C
t
d(off)
t
r
t
f
t
d(on)
T = 25°C
T = 175°C
J
T = 25°C
T = 175°C
J
J
J
10
10
0
10
20
30
40
50
0
10
20
30
40
50
R , GATE RESISTANCE (W)
G
R , GATE RESISTANCE (W)
G
Figure 9. Turn−On Characteristics vs. Gate
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
Resistance
500
100
200
100
V
R
= 400 V, V = 15 V
= 3 W
V
R
= 400 V, V = 15 V
= 3 W
CC
GE
CC
GE
G
G
t
r
t
f
t
d(on)
t
d(off)
T = 25°C
T = 175°C
J
J
T = 25°C
T = 175°C
J
J
10
10
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Turn−On Characteristics vs.
Figure 12. Turn−Off Characteristics vs.
Collector Current
Collector Current
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6
AFGB40T65RQDN
TYPICAL CHARACTERISTICS (Continued)
2.8
2.4
14.4
V
I
= 400 V, V = 15 V
= 40 A
V
= 400 V, V = 15 V
CC GE
CC
GE
12.8
11.2
9.6
8.0
6.4
4.8
3.2
1.6
0.0
I
C
= 40 A, R = 3 W
C
G
E
on
T = 25°C
T = 175°C
J
J
2.0
1.6
1.2
0.8
E
off
E
on
E
off
E
on
E
off
0.4
0.0
T = 25°C
T = 175°C
J
J
0
10
20
30
40
50
0
20
40
60
80
100
120
R , GATE RESISTANCE (W)
G
I , COLLECTOR CURRENT (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
40
30
20
160
120
V
R
= 400 V, I = 40 A
R
T = 25°C
J
T = 175°C
J
80
T = 25°C
J
T = 175°C
J
40
1
10
0
0
1
2
3
4
400
600
800
1000
1200
1400
1600
V , FORWARD VOLTAGE (V)
F
dI /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 15. Forward Characteristics
Figure 16. Reverse Recovery Current
200
150
2
1
V
R
= 400 V, I = 40 A
V = 400 V, I = 40 A
R R
R
T = 175°C
J
T = 175°C
J
100
50
0
T = 25°C
T = 25°C
J
J
0
400
400
600
800
1000
1200
1400
1600
600
800
1000
1200
1400 1600
dI /dt, DIODE CURRENT SLOPE (A/ms)
F
dI /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 17. Reverse Recovery Time
Figure 18. Stored Charge
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7
AFGB40T65RQDN
TYPICAL CHARACTERISTICS (Continued)
1
0.5
Notes:
Duty Factor, D = t1/t2
PDM
0.1
0.2
0.1
t1
Peak T = Pdm x Zthjc + T
c
j
t2
0.05
R1
R2
0.02
i:
1
2
3
4
ri [K/W]: 0.0062
0.0362
0.0721
8.709E-05
0.0714
4.501E-04
0.01
Single Pulse
0.0001
τ [s]:
3.543E-06 2.945E-05
C1=t1/R1
C2=t2/R2
0.01
0.00001
0.001
0.01
0.1
1
10
RECTANGULAR PULSE DURATION (s)
Figure 19. Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
Notes:
Duty Factor, D = t1/t2
PDM
0.1
t1
t2
0.05
Peak T= Pdm x Zthjc + T
c
j
0.02
R1
R2
i:
ri [K/W]: 0.0236
τ [s]: 3.491E-06
1
2
3
4
0.01
Single Pulse
0.0556
2.099E-05
0.2232
0.1865
2.913E-04 1.188E-03
C1=t1/R1
C2=t2/R2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
RECTANGULAR PULSE DURATION (s)
Figure 20. Transient Thermal Impedance of Diode
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
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