AFGB40T65SQDN [ONSEMI]
IGBT, 650V FS4 High speed version, for OBC application in D2pak;
| 型号： | AFGB40T65SQDN |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, 650V FS4 High speed version, for OBC application in D2pak 双极性晶体管 |
| 文件： | 总9页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AFGB40T65SQDN
IGBT for Automotive
Applications, 650 V, 40 A,
D2PAK
Features
• Maximum Junction Temperature: T = 175°C
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J
• High Speed Switching Series
BV
V
TYP
I MAX
C
• V
= 1.6 V (Typ.) @ I = 40 A
C
CES
CE(sat)
CE(sat)
• 100% of the Part are Dynamically Tested (Note 1)
• AEC−Q101 Qualified
650 V
1.6 V
160 A
C
E
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
G
ABSOLUTE MAXIMUM RATINGS
(T = 25°C unless otherwise stated)
J
C
Parameter
Symbol
Value
650
20
Unit
V
Collector to Emitter Voltage
Gate-to-Emitter Voltage
V
CES
V
GES
V
GES
G
V
E
Transient Gate-to-Emitter Voltage
30
V
2
D PAK−3
CASE 418AJ
Collector Current − T = 25°C
I
C
80
A
C
Collector Current − T = 100°C
40
A
C
MARKING DIAGRAM
Pulsed Collector Current (Note 2)
I
I
160
40
A
CM
Diode Forward Current − T = 25°C
I
F
A
C
Diode Forward Current − T = 100°C
20
A
C
$Y&Z&3&K
AFGB
40T65SQDN
Pulsed Diode Maximum Forward
Current (Note 2)
160
A
FM
Maximum Power Dissipation −
C
P
238
119
W
W
°C
D
T
= 25°C
Maximum Power Dissipation −
= 100°C
T
C
Operating Junction and Storage
Temperature
T , T
J
−55 to 175
stg
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3-Digit Data Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= 2-Digit Lot Traceability Code
AFGB40T65SQDN= Specific Device Code
1. V = 400 V, V = 15 V, I = 120A, R = 100 W, Inductive Load.
CC
GE
C
G
2. Repetitive rating: pulse width limited by max. Junction temperature.
2
3. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
ORDERING INFORMATION
4. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
†
Device
Package
Shipping
2
AFGB40T65SQDN
D PAK
800 Units /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
December, 2018 − Rev. 2
AFGB40T65SQDN/D
AFGB40T65SQDN
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.63
1.55
40
Unit
°C/W
Thermal Resistance Junction-to-Case, for IGBT
Thermal Resistance Junction-to-Case, for Diode
Thermal Resistance Junction-to-Ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
−
−
−
Collector to Emitter Breakdown
Voltage
V
I
= 0 V, I = 1 mA
650
V
BV
CES
GE
C
−
V/°C
Temperature Coefficient of
Breakdown Voltage
= 1 mA, Reference to 25°C
0.6
C
DV
/DT
J
CES
−
−
−
−
Collector Cut-Off Current
V
V
= V
= V
, V = 0 V
250
400
I
I
mA
CE
CES
GE
CES
G−E Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
, V = 0 V
CE
nA
GE
GES
GES
4.5
V
GE
= V , I = 40 mA
2.6
6.4
V
V
V
GE(th)
CE
C
Collector to Emitter Saturation
Voltage
−
V
I
= 40 A, V = 15 V, T = 25°C
1.6
2.1
CE(sat)
C
C
GE
C
−
1.92
−
I
= 40 A, V = 15 V, T = 175°C
V
GE
C
DYNAMIC CHARACTERISTIC
Input Capacitance
V
= 30 V, V = 0 V, f = 1 MHz
−
−
−
2495
50
−
−
−
pF
C
CE
GE
ies
Output Capacitance
C
oes
9
Reverse Transfer Capacitance
SWITCHING CHARACTERISTIC
Turn-On Delay Time
C
res
VCC= 400 V, I = 40 A, R = 6 W,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
17.6
19.2
75.2
9.6
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
t
C
G
d(on)
V
T
= 15 V, Inductive Load,
GE
C
= 25°C
Rise Time
t
r
ns
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
0.858
0.229
1.087
16
mJ
mJ
mJ
ns
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
E
E
on
off
E
ts
VCC= 400 V, I = 40 A, R = 6 W,
t
t
C
G
d(on)
V
T
= 15 V, Inductive Load,
GE
C
22.4
81.6
20.8
1.14
0.484
1.624
76
ns
= 175°C
t
r
ns
Turn-Off Delay Time
Fall Time
d(off)
ns
t
f
mJ
mJ
mJ
nC
nC
nC
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
E
on
off
E
ts
V
CE
= 400 V, I = 40 A, V = 15 V
C GE
Qg
14
Qge
Qgc
17
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2
AFGB40T65SQDN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated) (continued)
C
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTIC OF THE DIODE (T = 25°C unless otherwise stated)
J
I = 20 A
−
−
−
−
−
−
−
1.5
22.3
131
348
100
245
961
2.1
−
V
Diode Forward Voltage
VFM
F
I = 20 A
mJ
ns
nC
mJ
ns
nC
Reverse Recovery Energy
F
E
rec
dIF/dt = 200 A/ms, T = 25°C
C
−
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Recovery Energy
t
rr
−
Q
rr
I = 20 A
−
E
rec
F
dIF/dt = 200A/ms, T = 175°C
C
−
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t
rr
−
Q
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
AFGB40T65SQDN
TYPICAL CHARACTERISTICS
180
120
60
180
20 V
15 V
12 V
20 V
15 V
12 V
T
= 25°C
T = 175°C
C
C
10 V
10 V
120
60
0
VGE = 8 V
VGE = 8 V
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector−Emitter Voltage, V (V)
Collector−Emitter Voltage, V (V)
CE
CE
Figure 1. Typical Output Characteristics (255C)
Figure 2. Typical Output Characteristics (1755C)
180
2,8
Common Emitter
Common Emitter
2,6
2,4
2,2
2
V
= 15 V
= 25°C
= 175°C
GE
V
= 15 V
GE
T
T
C
C
120
60
0
80 A
40 A
1,8
1,6
1,4
1,2
1
I
C
= 20 A
−100
−50
0
50
100
150
200
0
1
2
3
4
5
Collector−Emitter Voltage, V (V)
Collector−Emitter Case Temperature, T (5C)
CE
C
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs Case Temperature
at Variant Current Level
20
16
12
8
20
Common Emitter
T = 175°C
C
Common Emitter
T
= 25°C
C
16
12
8
I
C
= 20 A
40 A
80 A
I
C
= 20 A
40 A
80 A
4
4
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate−Emitter Voltage, V (V)
Gate−Emitter Voltage, V (V)
GE
GE
Figure 5. Saturation Voltage vs VGE (255C)
Figure 6. Saturation Voltage vs VGE (1755C)
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4
AFGB40T65SQDN
TYPICAL CHARACTERISTICS
10000
1000
100
10
15
Common Emitter
= 25°C
Cies
T
C
300 V
12
9
Vcc = 200 V
400 V
Coes
Cres
6
Common Emitter
= 0 V, f = 1 MHz
3
V
GE
T
= 25°C
C
1
0
1
10
Collect to Emitter Voltage, V (V)
100
0
25
50
Gate Charge, G (nC)
75
100
CE
g
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
100
1000
td(off)
100
10
1
tr
tf
td(on)
Common Emitter
Common Emitter
V
I
= 400 V, V = 15 V,
= 40 A
V
I
= 400 V, V = 15 V,
= 40 A
CC
GE
CC
GE
C
C
T
T
= 25°C
= 175°C
T
T
= 25°C
= 175°C
C
C
C
C
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, R (W)
Gate Resistance, R (W)
G
G
Figure 9. Turn−On Characteristics vs Gate
Figure 10. Turn−Off Characteristics vs Gate
Resistance
Resistance
100
tr
td(off)
100
10
1
td(on)
tf
10
1
Common Emitter
Common Emitter
V
T
T
= 15 V, R = 6 W
= 25°C
= 175°C
V
T
= 15 V, R = 6 W
= 25°C
GE
G
GE
G
C
C
C
T
= 175°C
C
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Collector Current, I (A)
Collector Current, I (A)
C
C
Figure 11. Turn−On Characteristics vs Collector
Figure 12. Turn−Off Characteristics vs Collector
Current
Current
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5
AFGB40T65SQDN
TYPICAL CHARACTERISTICS
10000
1000
100
10000
1000
Eon
Eon
Eoff
Eoff
Common Emitter
100
10
V
I
= 400 V, V = 15 V,
= 40 A
Common Emitter
CC
GE
V
T
T
= 15 V, R = 6 W
= 25°C
= 175°C
C
GE
G
T
T
= 25°C
= 175°C
C
C
C
C
0
10
20
30
40
50
0
25
50
75
100
125
150
Gate Resistance, R (W)
Collector Current, I (A)
G
C
Figure 13. Switching Loss vs Gate Resistance
Figure 14. Switching Loss vs Collector Current
100
10
1
100
10 ms
100 ms
1 ms
DC
10
T
= 75°C
10 ms
J
1
0
T = 175°C
J
T
= 25°C
J
*Note:
1. T = 25°C
T
T
T
= 25°C
= 75°C
= 175°C
C
C
C
C
2. T = 175°C
J
3. Single Pulse
0
1
10
100
1000
0
1
2
3
4
Collector − Emitter Voltage, V (V)
Forward Voltage, V (V)
F
CE
Figure 15. SOA Characteristics
Figure 16. Forward Characteristics
400
350
300
250
200
150
100
10
8
di/dt = 200 A/ms
di/dt = 100 A/ms
di/dt = 200 A/ms
6
di/dt = 100 A/ms
di/dt = 200 A/ms
4
di/dt = 100 A/ms
2
T
T
= 25°C
= 175°C
C
C
T
T
= 25°C
= 175°C
C
C
50
0
0
0
10
20
Forward Current, I (A)
30
40
0
10
20
30
40
Forward Current, I (A)
F
F
Figure 17. Reverse Recovery Current
Figure 18. Reverse Recovery Time
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6
AFGB40T65SQDN
TYPICAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
di/dt = 200 A/ms
di/dt = 100 A/ms
T
T
= 25°C
= 175°C
C
C
0
10
20
Forward Current, I (A)
30
40
F
Figure 19. Stored Charge
1.00
0.10
0.01
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
1E−05
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of IGBT
1.00
0.10
0.01
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
1E−05
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (s)
Figure 21. Transient Thermal Impedance of Diode
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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