CPH6635 [ONSEMI]
Complementary Dual CPH6 Power MOSFET;
| 型号： | CPH6635 |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Dual CPH6 Power MOSFET |
| 文件： | 总8页 (文件大小：412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA2166
CPH6635
Power MOSFET
http://onsemi.com
–
–
Ω
Ω
3
0V, 0.4A, 3.7 , 20V, 1.5A, 280m , Complementary Dual CPH6
Features
•
Excellent ON-resistance characteristic (P-Channel : R (on)1=215m (typ.))
Ω
DS
Optimal for load switch use (N-Channel for drive is embedded)
N-Channel : 1.5V drive, P-Channel : 1.8V drive
Halogen Free compliance
•
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
N-channel
P-channel
--20
Unit
V
V
30
±10
0.4
DSS
V
±10
V
GSS
I
--1.5
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
1.6
--6.0
A
≤
μ
≤
DP
P
0.8
150
--55 to +150
W
°C
°C
×
D
Tch
Tstg
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
unit : mm (typ)
Device
Package
Shipping
memo
7018A-007
Pb Free
and
Halogen Free
CPH6
3,000
pcs./reel
CPH6635-TL-H
SC-74, SOT-26, SOT-45
2.9
0.15
0.05
CPH6635-TL-H
6
5
4
3
Packing Type: TL
Marking
1
2
TL
0.95
1 : Source1
2 : Gate1
0.4
Electrical Connection
3 : Drain2
4 : Source2
5 : Gate2
6
5
4
6 : Drain1
CPH6
1
2
3
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002929/10913 TKIM No. A2166-1/8
CPH6635
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
[N-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
(BR)DSS
D
GS
I
V
=30V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
1.3
μ
GSS
GS DS
V
(off)
|
V
=10V, I =100
A
μ
0.4
V
GS
yfs
DS
D
Forward Transfer Admittance
V
=10V, I =80mA
D
0.22
2.9
3.7
6.4
7
S
|
DS
R
R
R
(on)1
(on)2
(on)3
I
=80mA, V =4V
3.7
5.2
Ω
DS
DS
DS
D GS
Static Drain to Source On-State Resistance
I
D
=40mA, V =2.5V
GS
Ω
I
D
=10mA, V =1.5V
GS
12.8
Ω
Input Capacitance
Ciss
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
V
=10V, f=1MHz
5.9
2.3
19
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
t
t
t
t
(on)
d
r
65
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
155
120
1.58
0.26
0.31
0.87
d
f
Total Gate Charge
Qg
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Qgs
Qgd
V
=10V, V =10V, I =150mA
GS
DS
D
V
I =150mA, V =0V
GS
1.2
SD
S
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
--20
V
(BR)DSS
D GS
I
V
=--20V, V =0V
--1
±10
A
A
μ
DSS
DS
GS
I
V
=±8V, V =0V
GS DS
μ
GSS
V
(off)
|
V
=--10V, I =--1mA
--0.4
--1.4
V
GS
yfs
DS
D
Forward Transfer Admittance
V
=--10V, I =--800mA
D
1.9
215
310
450
120
26
S
|
DS
R
R
R
(on)1
(on)2
(on)3
I
=--800mA, V =--4.5V
280
434
675
m
Ω
Ω
Ω
DS
DS
DS
D GS
Static Drain to Source On-State Resistance
I
D
=--400mA, V =--2.5V
GS
m
m
I
D
=--200mA, V =--1.8V
GS
Input Capacitance
Ciss
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
pF
pF
ns
DS
20
t
t
t
t
(on)
5.3
d
r
9.7
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
16
ns
d
f
14
ns
Total Gate Charge
Qg
1.7
nC
nC
nC
V
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--10V, V =--4V, I =--1.5A
GS
0.28
0.47
--0.9
DS
D
V
SD
I =--1.5A, V =0V
S GS
--1.5
No.8987-2/8
CPH6635
Switching Time Test Circuit
[N-channel]
[P-channel]
V =15V
DD
V = --10V
DD
V
IN
V
IN
4V
0V
0V
--4.5V
I
=150mA
I = --800mA
D
R =12.5Ω
L
D
V
IN
V
IN
R =100Ω
L
D
V
OUT
D
V
OUT
PW=10μs
D.C.≤1%
PW=10μs
D.C.≤1%
G
G
CPH6635
CPH6635
P. G
P. G
50Ω
50Ω
S
S
[Nch]
I
D
-- V
DS
I
D
-- V
GS
[Nch]
0.30
0.25
0.20
0.15
0.10
0.16
V
=10V
DS
0.14
0.12
0.10
0.08
3.5V
4.0V
V
=1.5V
GS
0.06
0.04
0.05
0
0.02
0
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT00030
[Nch]
Drain to Source Voltage, V
DS
-- V
IT00029
Gate to Source Voltage, V
GS
-- V
[Nch]
R
(on) -- I
DS D
R
(on) -- V
DS
GS
10
7
10
9
Ta=25°C
V
=4V
GS
8
7
5
I =80mA
D
Ta=75°C
25°C
6
5
4
3
2
40mA
3
2
--25°C
1
0
1.0
0.01
2
3
5
7
2
3
5
7
0
1
2
3
4
5
6
7
8
9
10
0.1
1.0
IT00031
IT00032
Gate to Source Voltage, V
GS
-- V
Drain Current, I -- A
D
No. A2166-3/8
CPH6635
R
(on) -- I
R
DS
(on) -- I
[Nch]
=1.5V
[Nch]
=2.5V
DS
D
D
10
100
V
V
GS
GS
7
5
7
3
2
5
Ta=75°C
25°C
--25°C
10
Ta=75°C
--25°C
3
2
7
5
3
2
25°C
1.0
0.01
1.0
0.001
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
0.01
0.1
Drain Current, I -- A
Drain Current, I -- A
D
IT00033
IT00034
D
R
(on) -- Ta
[Nch]
[Nch]
| yfs | -- I
DS
D
1.0
7
V
=10V
DS
7
5
6
3
2
5
4
3
2
25°C
0.1
7
5
3
2
1
0
0.01
0.01
--60 --40 --20
0
20
40
60
80 100 120 140 160
2
3
5
7
2
3
5
7
0.1
1.0
Ambient Temperature, Ta -- °C
Drain Current, I -- A
IT00035
IT00036
D
I
S
-- V
[Nch]
SW Time -- I
D
[Nch]
SD
1.0
1000
V
V
=15V
=4V
V
=0V
DD
GS
GS
7
5
7
5
3
2
3
2
t
f
100
0.1
7
5
7
5
t
r
3
2
3
2
t (on)
d
0.01
0.5
10
0.01
0.6
0.7
0.8
0.9
1.0
1.1
1.2
2
3
5
7
2
0.1
Diode Forward Voltage, V
SD
Ciss, Coss, Crss -- V
-- V
Drain Current, I -- A
D
IT00037
IT00038
[Nch]
[Nch]
V
-- Qg
DS
GS
10
100
V
=10V
f=1MHz
DS
7
9
8
7
I =150mA
D
5
3
2
6
5
4
3
2
1
0
10
Ciss
7
5
Coss
3
2
Crss
1.0
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IT00039
IT00040
Drain to Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
DS
No.8987-4/8
CPH6635
[Nch]
A S O
3
2
I
=1.6A (PW
≤10μs)
DP
1.0
7
5
I =0.4A
D
3
2
0.1
Operation in this
7
5
area is limited by R (on).
DS
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit
0.01
1.0
2
3
5
7
2
3
5
10
IT11328
Drain to Source Voltage, V
DS
-- V
I
-- V
DS
[Pch]
I
-- V
[Pch]
D
D GS
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
V
DS
= --10V
--0.2
0
--0.2
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
IT14615
Drain to Source Voltage, V
DS
-- V
IT14614
Gate to Source Voltage, V -- V
GS
R
(on) -- V
[Pch]
R
(on) -- Ta
[Pch]
DS
GS
DS
700
600
500
400
300
200
700
600
500
400
300
200
Ta=25°C
I = --0.2A
D
--0.4A
--0.8A
100
0
100
0
--60 --40 --20
0
20
40
60
80 100 120 140 160
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
Gate to Source Voltage, V
GS
-- V
IT16999
[Pch]
Case Temperature, Ta -- °C
IT17000
| yfs | -- I
I
-- V
[Pch]
D
S SD
5
5
V
= --10V
V
=0V
DS
GS
3
2
3
2
--1.0
7
5
1.0
3
2
7
5
--0.1
3
2
7
5
3
2
0.1
7
--0.01
2
3
5
7
2
3
5
7
--1.0
2
3
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT14619
--0.01
--0.1
Drain Current, I -- A
IT14618
Diode Forward Voltage, V -- V
SD
D
No. A2166-5/8
CPH6635
SW Time -- I
Ciss, Coss, Crss -- V
DS
[Pch]
[Pch]
D
3
2
5
V
V
= --10V
= --4.5V
f=1MHz
DD
GS
3
2
100
t
f
7
5
10
7
5
3
2
t (on)
d
3
10
7
2
2
3
5
7
2
3
0
--2
--4
--6
--8
--10 --12 --14 --16 --18 --20
--0.1
--1.0
Drain Current, I -- A
IT14620
Drain to Source Voltage, V
-- V
IT14621
D
DS
V
GS
-- Qg
A S O
[Pch]
[Pch]
--4.5
--10
7
5
I
I
= --6A (PW≤10μs)
V
= --10V
= --1.5A
DP
DS
I
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
D
3
2
= --1.5A
D
--1.0
7
5
3
2
Operation in
this area is
limited by R (on).
--0.1
DS
7
5
3
2
Ta=25°C
--0.5
0
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
--0.01
--0.1
2
3
5
7
2
3
5
7
2
3
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
--1.0
--10
Total Gate Charge, Qg -- nC
Drain to Source Voltage, V -- V
DS
IT14622
IT17001
P
-- Ta
[Nch/Pch]
D
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT16651
No.8987-6/8
CPH6635
Outline Drawing
Land Pattern Example
CPH6635-TL-H
Mass (g) Unit
Unit: mm
0.015
mm
* For reference
0.6
0.95
0.95
No. A2166-7/8
CPH6635
Note on usage : Since the CPH6635 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
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PS No. A2166-8/8
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