ESDM1031MX4T5G [ONSEMI]
3.3 V ESD Protection Diode in 01005 package;
| 型号： | ESDM1031MX4T5G |
| 厂家： | 
ONSEMI |
| 描述： | 3.3 V ESD Protection Diode in 01005 package 局域网 测试 二极管 |
| 文件： | 总7页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
ESDM1031
3.3V ESD Protection Diodes
Micro−packaged Diodes for ESD
Protection
The ESDM1031 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast
response time provide best in class protection on designs that are
exposed to ESD. Because of its small size, it is suited for use in
smartphone, smart−watch, or many other portable / wearable
applications where board space comes at a premium.
www.onsemi.com
X4DFN2 (01005)
CASE 718AA
Features
• Low Capacitance (30 pF Typ, I/O to GND)
• Small Body Outline Dimensions − 01005 Size: 0.445 x 0.24 mm
• Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
MARKING DIAGRAM
KM
• Low ESD Clamping Voltage
K = Device Code
M = Date Code
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONFIGURATION
AND SCHEMATIC
Applications
• Audio Line Protection
• SIM Card Protection
• GPIO Protection
1
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Rating
Symbol
Value
−55 to +150
−55 to +150
260
Unit
°C
Operating Junction Temperature Range
Storage Temperature Range
T
J
T
stg
°C
Lead Solder Temperature −
T
L
°C
Maximum (10 Seconds)
ESDM1031:
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ESD
30
30
kV
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2019 − Rev. 0
ESDM1031/D
ESDM1031
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Conditions
Min
4.6
12
Typ
Max
3.3
6.3
0.5
Unit
V
Reverse Working Voltage
Breakdown Voltage
V
RWM
I/O Pin to GND
I = 1 mA, I/O Pin to GND
V
BR
5.2
0.005
14
V
T
Reverse Leakage Current
Reverse Peak Pulse Current
Clamping Voltage
I
R
V
RWM
= 3.3 V, I/O Pin to GND
mA
A
I
PP
IEC61000−4−5 (8x20 ms)
V
V
I
= 12 A, (8/20 ms pulse)
8.6
9.6
V
C
PP
PP
Clamping Voltage
TLP (Note 1)
7.4
V
I
= 8 A
IEC 61000−4−2 Level 2 equivalent
( 4 kV Contact, 8 kV Air)
C
I
PP
= 16 A
9.1
IEC 61000−4−2 Level 2 equivalent
( 8 kV Contact, 16 kV Air)
Dynamic Resistance
Junction Capacitance
R
I/O Pin to GND, 100 ns TLP
= 0 V, f = 1 MHz
0.21
30
W
DYN
C
V
R
33
pF
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z = 50 W, t = 100 ns, t = 1 ns, averaging window; t = 70 ns to t = 90 ns.
0
p
r
1
2
ORDERING INFORMATION
Device
†
Package
Shipping
ESDM1031MX4T5G
X4DFN2
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
ESDM1031
TYPICAL CHARACTERISTICS
30
25
20
15
10
5
10
5
0
−5
−10
−15
−20
−25
−30
0
−5
−10
−20
0
20
40
60
80
100 120 140
−20
0
20
40
60
80
100 120 140
Time (ns)
Time (ns)
Figure 1. ESD Clamping Voltage
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage
Negative 8 kV Contact per IEC61000−4−2
20
18
16
14
12
10
10
9
20
10
9
18
16
14
12
10
8
8
7
7
6
6
5
5
8
6
4
2
0
4
3
2
1
0
8
6
4
2
0
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
V
CTLP
(V)
V
CTLP
(V)
Figure 3. Positive TLP I−V Curve
Figure 4. Negative TLP I−V Curve
12
12
11
10
9
11
10
9
8
8
7
6
5
4
7
6
5
4
3
2
1
0
3
2
1
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
(A)
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
(A)
I
I
PK
PK
Figure 5. Positive Clamping Voltage vs. Peak
Figure 6. Negative Clamping Voltage vs. Peak
Pulse Current (tp = 8/20 ms)
Pulse Current (tp = 8/20 ms)
www.onsemi.com
3
ESDM1031
TYPICAL CHARACTERISTICS
1E−03
1E−04
1E−05
1E−06
1E−07
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
1E−09
1E−10
1E−11
1E−12
1E−13
1E−08
1E−09
1E−10
1E−11
−6 −5 −4 −3 −2 −1
0
1
2
3
4
5
6
−8 −7 −6 −5 −4 −3 −2 −1
0
1
2
3
4
5
6
7 8
V (V)
R
V
R
(V)
Figure 7. Breakdown Voltage
Figure 8. Reverse Leakage Current
0.0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−1.4
−1.6
−1.8
−2.0
−2.2
−2.4
−2.6
−2.8
−3.0
1.0E+06
1.0E+07
1.0E+08
1.0E+09
Frequency (Hz)
Figure 9. Magnitude vs. Frequency
www.onsemi.com
4
ESDM1031
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
Test
Voltage
(kV)
First Peak
Current
(A)
100%
90%
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 10. IEC61000−4−2 Spec
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 11. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 12 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
÷
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 11. Simplified Schematic of a Typical TLP
System
Figure 12. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
www.onsemi.com
5
ESDM1031
PACKAGE DIMENSIONS
X4DFN2, 0.445x0.24, 0.27P
CASE 718AA
ISSUE A
A
B
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
MILLIMETERS
PIN 1
REFERENCE
DIM MIN
NOM MAX
E
A
A1
b
D
E
e
0.15
−−−
0.18
0.21
0.03
TOP VIEW
−−−
0.170 0.185 0.200
0.415 0.445 0.475
0.210 0.240 0.270
0.270 BSC
A
0.03
0.03
C
C
L
0.105 0.120 0.135
A1
SEATING
PLANE
C
SIDE VIEW
RECOMMENDED
e
MOUNTING FOOTPRINT*
e/2
2X b
2
2X
0.21
0.27
PITCH
PIN 1
2X L
0.10 C A B
NOTE 3
0.05 C
1
BOTTOM VIEW
2X
0.13
DIMENSIONS: MILLIMETERS
See Application Note AND8398/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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LITERATURE FULFILLMENT:
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◊
ESDM1031/D
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