FCH041N60F [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，600 V，76 A，41 mΩ，TO-247;
| 型号： | FCH041N60F |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，600 V，76 A，41 mΩ，TO-247 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
SUPERFET) II, FRFET)
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
41 mW
76 A
600 V, 76 A, 41 mW
D
FCH041N60F
Description
SUPERFET II MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on−resistance and lower gate charge
performance. This technology is tailored to minimize conduction loss,
provide superior switching performance, dv/dt rate and higher
avalanche energy. Consequently, SUPERFET II MOSFET is very
suitable for the switching power applications such as PFC,
server/telecom power, FPD TV power, ATX power and industrial
power applications. SUPERFET II FRFET MOSFET’s optimized
body diode reverse recovery performance can remove additional
component and improve system reliability.
G
S
N-Channel MOSFET
G
D
S
Features
TO−247
CASE 340CK
• 650 V @ T = 150°C
J
• Typ. R
= 36 mW
DS(on)
MARKING DIAGRAM
• Ultra Low Gate Charge (Typ. Q = 277 nC)
g
• Low Effective Output Capacitance (Typ. C
= 748 pF)
oss(eff.)
• 100% Avalanche Tested
• This Device is Pb−Free, Halide Free, and is RoHS Compliant
&Z&3&K
FCH
041N60F
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
• UPS / Solar
&Z
&3
&K
= Assembly Plant Code
= Data Code (Year & Week)
= Lot Code
FCH041N60F = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
May, 2023 − Rev. 3
FCH041N60F/D
FCH041N60F
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
600
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
20
V
AC (f > 1 Hz)
30
I
D
Drain Current
Continuous (T = 25°C)
76
A
C
Continuous (T = 100°C)
48.1
228
C
I
I
Drain Current
Pulsed (Note 1)
A
mJ
A
DM
E
AS
AR
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
2025
15
E
5.95
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
595
W
W/°C
°C
D
C
Derate Above 25°C
4.76
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 15 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 38 A, di/dt ≤ 200 A/ms, V ≤ 380 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.21
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
FCH041N60F
FCH041N60F
TO−247
Tube
N/A
30 Units
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2
FCH041N60F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
600
650
−
−
−
−
−
−
V
V
V
I
= 0 V, I = 10 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 10 mA, T = 150_C
GS
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 10 mA, Referenced to 25_C
0.67
V/_C
mA
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 600 V, V = 0 V
−
−
−
−
267
−
10
−
DSS
GS
= 480 V, T = 125_C
C
I
Gate to Body Leakage Current
=
20 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 250 mA
3
−
−
−
5
41
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 38 A
36
D
g
FS
= 20 V, I = 38 A
64.5
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 100 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
−
10800
324
4.5
14365
pF
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
430
−
oss
C
Reverse Transfer Capacitance
Output Capacitance
rss
C
V
DS
V
DS
V
DS
= 380 V, V = 0 V, f = 1 MHz
185
748
277
65.3
116
1.0
−
oss
GS
C
Effective Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
= 0 V to 480 V, V = 0 V
−
oss(eff.)
GS
Q
= 380 V, I = 38 A, V = 10 V
360
−
g(tot)
D
GS
(Note 4)
Q
gs
gd
Q
−
ESR
f = 1 MHz
−
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 380 V, I = 38 A,
−
−
−
−
63
66
136
142
498
116
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
G
t
r
(Note 4)
t
244
53
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
−
−
−
−
−
−
77
231
1.2
A
A
V
S
I
SM
V
SD
Drain to Source Diode Forward
Voltage
V
GS
= 0 V, I = 38 A
SD
t
Reverse Recovery Time
V
= 0 V, I = 38 A,
−
−
214
−
−
ns
rr
GS
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
1.79
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
FCH041N60F
TYPICAL PERFORMANCE CHARACTERISTICS
250
500
100
V
GS
= 15.0 V
10.0 V
8.0 V
*Notes:
1. V = 20 V
100
DS
2. 250 ms Pulse Test
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
25°C
10
1
10
150°C
−55°C
1
*Notes:
1. 250 ms Pulse Test
2. T = 25°C
C
0.1
0.1
0.05
1
6
8
10 20
2
4
V
GS
, Gate Source Voltage [V]
V
DS
, Drain to Source Voltage [V]
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
250
100
0.060
0.055
0.050
0.045
0.040
0.035
0.030
150°C
25°C
10
1
V
= 10 V
GS
V
GS
= 20 V
*Notes:
1. V = 0 V
GS
2. 250 ms Pulse Test
*Note: T = 25°C
C
0.1
0.1
0.4
0.8
1.6
0
100
150
200
250
1.2
50
V
SD
, Body Diode Forward Voltage [V]
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
5
10
10
C
iss
VDS = 120 V
VDS = 300 V
4
8
10
10
VDS = 480 V
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
oss
rss
ds
gd
3
6
C
oss
= C
gd
2
4
2
10
C
rss
1
10
*Note:
1. V = 0 V
GS
2. f = 1 MHz
*Note: ID = 38 A
200 250
Q , Total Gate Charge [nC]
0
10
0
0
100
V
200
300
400
500
600
0
50
100
150
300
, Drain−Source Voltage [V]
DS
g
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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4
FCH041N60F
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
3.0
2.5
2.0
1.5
1.0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
*Notes:
*Notes:
0.5
1. V = 0 V
1. V = 10 V
GS
GS
2. I = 10 mA
2. I = 38 A
D
D
0.0
−100 −50
0
50
100
150
200
−100 −50
0
50
100
150
200
T , Junction Temperature [°C]
J
T , Junction Temperature [°C]
J
Figure 8. On-Resistance Variation vs. Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
500
80
60
10 ms
100 ms
100
10
1
V
GS
= 10 V
1 ms
DC
40
20
0
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T = 25°C
C
2. T = 150°C
J
3. Single Pulse
0.1
0.1
1
10
100
1000
25
50
75
100
125
150
V
DS
, Drain to Source Voltage [V]
T , Case Temperature [°C]
C
Figure 9. Maximum Safe Operation Area
Figure 10. Maximum Drain Current
vs. Case Temperature
45
36
27
18
9
0
600
0
100
200
300
400
500
V
DS
, Drain to Source Voltage [V]
Figure 11. EOSS vs. Drain to Source Voltage
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5
FCH041N60F
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
0.3
0.1 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
*Notes:
1. Z (t) = 0.21°C/W Max.
q
JC
2. Duty Factor, D= t /t
1
2
Single Pulse
3. T − T = P * Z (t)
q
JC
JM
C
DM
0.001
−5
−4
0
−3
−2
−1
10
10
10
10
10
10
t , Rectangular Pulse Duration [sec]
1
Figure 12. Transient Thermal Response Curve
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6
FCH041N60F
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCH041N60F
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
SD
di/dt
(DUT)
I
RM
Body Diode Reverse Current
V
DS
Body Diode Recovery dv/dt
(DUT)
V
DD
V
SD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the
United States and/or other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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